We considered that the combination of the Ge-addition to Si and the Metal Induced Lateral Crystallization is useful to produce polycrystalline semiconductor films on the glass substrate by a low-temperature process. In this study, we focused on the effects of the atmosphere during annealing. In the case of the N(2)-flow annealing, Ni/Si(0.7)Ge(0.3)/SiO(2) showed more evidence of oxidation than the Ni/Si/SiO(2). It means that the ordinary annealing procedure for Si is not good when the specimen includes both Ge and Ni. This problem was completely solved by using a high-vacuum furnace, the total pressure was similar to 10(-5) Pa, and we succeeded ;in crystallizing SiGe in a large region. (c) 2008 Elsevier B.V. All rights reserved.