The results of a comparative study on the charge trapping/detrapping behavior in thin ZrO(2) and TiO(2) high-k gate dielectrics on p-Ge (100) under stressing in constant current (CCS, 1.02-5.1 C cm(-2)) and voltage (CVS, -5 V to -7 V) at gate injection mode are presented. Stoichiometric thin films of ZrO(2) and TiO(2) have been deposited on p-Ge (100) using organometallic sources at relatively low temperature (<200 degrees C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma discharge at a pressure of 66.67 Pa. The effect of stressing on several important interfacial parameters, like, interface state density, fixed oxide charge, oxide charge centroids, and capture cross-section of traps etc. is reported. (C) 2008 Elsevier B.V. All rights reserved.