Thin Solid Films, Vol.517, No.1, 84-86, 2008
Selective epitaxial growth of B-doped SiGe and HCl etch Si for the formation of SiGe:B recessed source and drain (pMOS transistors)
HCl chemical vapor etching and selective epitaxial growth of B-doped SiGe layers for recessed source/drain application for pMOSFET structure have been presented. The pattern dependency of the etch and epitaxy process were studied and the data correlated to the Si coverage of the chip. (c) 2008 Elsevier B.V. All rights reserved.