GaFeO3 thin films were prepared on MgO(001), A1(2)O(3)(0001) and fused quartz substrates by the pulsed laser deposition technique. The lattice match mechanisms between GaFeO3 thin films and substrates have been analyzed. Results of optical properties analysis show that the thin films have the different band gaps and optical properties. These differences can be ascribed to the different lattice strains induced by the different lattice mismatch and thermal expansion coefficients between the GaFeO3 thin films and the substrates. (C) 2008 Elsevier B.V. All rights reserved.