Cu-In-Ga (CIG) layers of graded composition have been grown by one-step electrodeposition from thiocyanate complex electrolytes. The Gacontent is adjusted from two to 30 at.% by changing stirring rate, deposition time and solution composition. The as prepared CIG precursors are selenizated at 500 degrees C in a two-temperature zone furnace at different Se-vapour pressures. The influence of the Se-vapour pressure on morphology and photoluminescence properties of Cu(In, Ga)Se(2) films are discussed. (c) 2007 Elsevier B.V. All rights reserved.