Germanium (Ge)-doped Czochralski (GCZ) silicon has been grown for photovoltaic (PV) applications. It is found that Ge doping improves the mechanical strength of CZ silicon, resulting in the reduction of breakage during wafer cutting, cell fabrication and module assembly. Boron-oxygen (B-O) defects that lead to the light-induced degradation (LID) of carrier lifetime are effectively suppressed by Ge doping. The decrease in the maximum concentration of B-O defects increases with an increase of Ge concentration. The efficiency of GCZ silicon solar cells and the power output of corresponding PV modules both exhibit smaller loss under sunlight illumination. The current work suggests that GCZ silicon should be potentially a novel substrate for thin solar cells with low LID effect. (C) 2011 Elsevier B.V. All rights reserved.