Minority carrier lifetime is the most crucial material parameter for the performance of a silicon solar cell. While numerous methods exist to determine carrier lifetime on solar cell precursors prior to metallization, only very few techniques are capable of implicitly extracting effective minority carrier lifetimes from metallized silicon samples. In this paper, a measurement technique for effective minority carrier lifetime on silicon solar cells and metallized cell precursors via quasi-steady-state photoluminescence is presented. The setup requirements for this measurement technique are elaborated, experimental evidence of the reliability of such measurements down to carrier lifetimes in the range of a microsecond is provided, and a lifetime calibration of spatially resolved photoluminescence images of solar cells via the presented measurement technique is sketched. Finally, the very good agreement between the obtained effective carrier lifetime and the corresponding open circuit voltage of a solar cell is demonstrated. (C) 2011 Elsevier B.V. All rights reserved.