Textured ZnO:Al films with excellent light scattering properties as a front electrode of silicon thin film solar cells were prepared on glass substrates by an in-line rf magnetron sputtering, followed by a wet-etching process to modify the surface morphologies of the films. Deposition parameters and wet etching conditions of the films were controlled precisely to obtain the optimized surface features. All as-deposited films show a strong preferred orientation in the [0 0 1] direction under our experimental conditions. The microstructure of the films was significantly affected by working pressure and film compactness was reduced with increasing working pressure, while the effect of a substrate temperature on the microstructure is less pronounced. A low resistivity of 4.25 x 10(-4) Omega cm and high optical transmittance of above 80% in a visible range were obtained in the films deposited at 1.5 mTorr and 100 C. After wet etching process, the surface morphologies of the films were changed dramatically depending on the microstructure and film compactness of the initial films. By controlling the surface feature, the haze factor and angular resolved distribution of the textured ZnO:Al films were improved remarkably when compared with commercial SnO(2):F films. The textured ZnO:Al and SnO(2):F films were applied as substrates for a silicon thin film solar cells with tandem structure of a-Si:H/mu c-Si:H. Compared with the solar cells with the SnO(2):F films, a significant enhancement in the short-circuit current density of the mu c-Si:H bottom cell was achieved, which is due to the improved light scattering on the highly textured ZnO:Al film surfaces in the long wavelength above 600 nm. (C) 2010 Elsevier B.V. All rights reserved.