Ce/V mixed oxide thin films with molar ratio I were prepared by sol-gel method from CeCl(3)center dot 7H(2)O and NH(4)VO(3) with methanol or distilled water as a solvent and dip-coated on SnO(2)/F-covered glass. The electrochemical, optical and structural properties of thin films depend on the solvent and heat treatment. The ion-storage capacities of the films annealed at 500 degrees C, prepared from methanol, 60 nm thick, was approximately 13 mC cm(-2) and those prepared with distilled water, 40 mm thick, more than 20 mC cm(-2). The ion-storage capacity of the films annealed at 400 degrees C was approximately 1 mC cm(-2). X-ray absorption fine structure analysis showed that crystallization process of CeVO(4) occurs in temperature range between 400 and 500 degrees C. (C) 2009 Elsevier B.V. All rights reserved.