In this work, the construction and photoelectrical characterization of p-type organic semiconductor oxazine (OXZ) in junction with n-type silicon semiconductor are presented. The Stokes shift between absorption and emission of oxazine was analyzed. The analysis of the spectral behavior of the absorption coefficient (alpha) of OXZ, in the absorption region revealed a direct transition, and the energy gap was estimated as 1.82 eV. From the current-voltage, I-V, measurements of the Au/OXZ/n-Si/Al heterojunction in the temperature range 300-375 K, characteristic junction parameters and dominant conduction mechanisms were obtained. This heterojunction showed a photovoltaic behavior with a maximum open circuit voltage, V(oc), of 0.42 V, short-circuit current density, J(sc) of 3.25 mA/cm(2), fill factor, FF, of 0.35 and power conversion efficiency, eta, of 3.2% under 15 mW/cm(2) white light illumination. (C) 2009 Elsevier B.V. All rights reserved.