Doped and undoped hematite films for photoelectrochemical hydrogen production were prepared by spin-coating deposition solution (SCDS). To understand the influence of the Si-doping and identify the critical parameters of the proposed SCDS method an extensive characterization was conducted. The Si-doped hematite exhibited higher photocurrent response when compared with undoped films. We have shown that the crystallographic orientation degree of the films appears to be a dominant factor affecting the photocurrent. The performance of our hematite electrodes is well below the maximum theoretical efficiency and the conceivable explanation could be given by the high value of recombination phenomena (electron/hole pair). (C) 2008 Elsevier B.V. All rights reserved.