Indium-doped cadmium oxide films were obtained by mixing cadmium oxide and indium oxide precursor solutions by the sot-gel technique. The indium atomic concentrations in solution (x) studied were 0, 2, 5 and 10at%. The films were sintered at two different sintering temperatures (T(s)) 350 and 450 degrees C, and after that annealed in a 96:4 N(2)/H(2) gas mixture atmosphere at 350 degrees C. X-ray diffraction patterns showed that all films sintered at T(s) = 350 degrees C only consisted of cadmium oxide crystals. The films sintered at T(s) = 450 degrees C consisted of cadmium oxide crystals also; however, for the highest indium atomic concentration (10at%) the formation of cadmium indate oxide crystals was evident. All films show high optical transmission (> 85%) and an increase of the direct band gap value front 2.4 to 3.1 eV, as the indium atomic concentration in solution increases. The minimum resistivity value obtained was 6.3 x 10(-4) Omega cm for the films with x = 5 at%, T(s) = 450 degrees C and annealed at 350 degrees C. (C) 2008 Elsevier B.V. All rights reserved.