The plasma-enhanced chemical vapor deposition of aluminum-doped zinc oxide has been demonstrated for the first time at 800 Torr and under 250 degrees C. A film resistivity of 3 x 10(-2) Omega cm and a transparency of 95% from 375 to 2500nm was obtained for deposition at 20-mTorr diethylzinc, 1.0 Torr CO2, 799 Torr He, a TMAl/DEZn ratio of 1:100, 41 W/cm(3) RF power, and 225 degrees C. The average aluminum concentration in the ZnO film was 5.4 x 10(20) cm(-3). It was found that, while the growth rate did not change with substrate temperature, both the resistivity and optical absorption coefficient declined with increasing temperature. (C) 2007 Elsevier B.V. All rights reserved.