This paper reports on the successful deposition of phosphorous (P)-doped n-type (p-C:P) carbon (C) films, and fabrication of n-C:P/p-Si cells by pulsed laser deposition (PLD) using graphite target at room temperature. The cells performances have been given in the dark I-V rectifying curve and I- V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm(2), 25 degrees C). The n-C:P/p-Si cell fabricated using target with the amount of P by 7 weight percentages (Pwt%) shows highest energy conversion efficiency, eta = 1.14% and fill factor, FF = 41 %. The quantum efficiency (QE) of the n-C:P/p-Si cells are observed to improve with and Pwt%. The dependence of P content on the electrical and optical properties of the deposited films and the photovoltaic characteristic of the n-C:P/p-Si heterojunction solar cell are discussed. (c) 2006 Published by Elsevier B.V.