Texturing by negative potential dissolution (NPD) process of p-type multicrystalline silicon for solar cells application is reported. The effect of the negative potential, KOH concentration, and texturing time of cast multicrystalline silicon was studied. Rapid texturing of multicrystalline silicon was achieved in a time-frame of 2 min with the application of negative potential of -30 V and the use of optimal alkaline concentration of 32wt%. While texturing process in these optimal NPD conditions results in a step-free morphology, necessary in solar cells contacts printing, light reflection was reduced to minimal values, as well. (c) 2005 Elsevier B.V. All rights reserved.