Copper indium sulfide (CuInS2)/In2S3 solar cells were fabricated using spray pyrolysis method and high short circuit current density and moderate open circuit voltage were obtained by adjusting the condition of deposition and thickness of both the layers. Consequently, a relatively high efficiency of 9.5% (active area) was obtained without any anti-reflection coating. The cell structure was ITO/CuInS2/ln(2)S(3)/Ag. We avoided the usual cyanide etching and CdS buffer layer, both toxic, for the fabrication of the cell. (C) 2004 Elsevier B.V. All rights reserved.