Physical Jet Deposition method was used to form the C60Ni films, one of the metal-doped [60] fullerenes films, which were made into the Al/C60Ni/ITO layered structure photovoltaic cells. The photovoltaic effect and the current voltage characteristic in dark with the devices were taken. Compared with the Al/C-60/ITO layer structure devices, the enhancement of photovoltage and rectification rate of C60Ni devices was found. Possible reasons were discussed. (c) 2004 Elsevier B.V. All rights reserved.