New directions in photovoltaics depend very often on financial possibilities and new equipment. In this paper, we present the modification of a standard screen-printing technology by using an infrared (IR) furnace for forming a n(+)/p structure with phosphorus-doped silica paste on 100 cm(2) multicrystalline silicon wafers. The solar cells were fabricated on 300 mum thick 1 Omegacm p-type multicrystalline Bayer silicon. The average results for 100 cm(2) multicrystalline silicon solar cells are: I-sc = 2589 mA, V-oc = 599 mV, FF = 0.74, E-ff = 11.5%. The cross-sections of the contacts metallized in the IR furnace, as determined by scanning electron microscopy, and the phosphorus profile measured by an electrochemical profiler are shown. IR processing offers many advantages, such as a small overall thermal budget, low power and time consumption, in terms of a cost-effective technology for the continuous preparation of solar cells. (C) 2002 Elsevier Science B.V. All rights reserved.