CuIn1-xGaxSe2 polycrystalline thin films were prepared by a two-step method. The metal precursors were deposited either sequentially or simultaneously using Cu-Ga (23 at%) alloy and In targets by DC magnetron sputtering. The Cu-In-Ga alloy precursor was deposited on glass or on Mo/glass substrates at either room temperature or 150degreesC. These metallic precursors were then selenized with Se pellets in a vacuum furnace. The CuIn1-xGaxSe2 films had a smooth surface morphology and a single chalcopyrite phase. (C) 2002 Elsevier Science B.V. All rights reserved.