Layered laser crystallization during PECVD of a-Si:H is a new and advantageous method to deposit c-Si films onto glass with a rate of 10 Angstrom s(-1). This new technology consists of two laser-induced crystal growth steps: A seed layer is prepared from a-Si:H by an overlapped scanning of an Ar+ laser beam. Then the seed is repeatedly thickened by melting of newly deposited a-Si:H on top of the c-Si with KrF laser pulses. Various deposition parameters were matched together to process a layer with crystallites 100 mum in size. p(+)pn(+)- or n(+)np(+)-junctions were deposited in one chamber and in one run. V-OC of 530 mV was achieved. (C) 2002 Elsevier Science B.V. All rights reserved.