Nickel-metal-induced lateral crystallization (MILC) was used to fabricate polycrystalline silicon thin films on glass substrates. Patterned Ni lines were formed on amorphous Si films by a lift-off process using photo resist. The samples were annealed in an N-2 atmosphere in a furnace at temperatures ranging from 550degreesC to 600degreesC. Both the doping concentration of the Si films and the annealing temperature strongly affected the orientation of the crystals. A p-type poly-Si film with a boron concentration of 5x10(19) cm(-3) annealed at 550 C was found to be strongly oriented in the <220> direction. (C) 2002 Elsevier Science B.V. All rights reserved.