The preparation of some multiple band gap semiconductor films based on CdSe and ZnSe has been carried out using galvanostatic electrochemical codeposition technique to investigate their photoelectrochemical characteristics on the basis of photoelectroconvertibility and photoaction spectral studies using I-2/I-3(-) and [Fe(CN)(6)](3-)/[Fe(CN)(6)](4-) redox couples. These composite systems show substantially improved photoelectrochemical properties compared to the constituent CdSe and ZnSe films prepared under comparable experimental conditions, These multiple band gap films were also found to exhibit enhanced resistance towards electrochemical corrosion. (C) 2002 Elsevier Science B.V. All rights reserved.