Dielec. barrier discharges (5 kHz) were used (5 min/200 degrees C/ 1 atm.) to deposit 100-500 nm Si oxide coatings on < 111 > Si monocrystals (friction coeff., 0.2) from 1.1% trimethyl-methoxysilane (TMMOS) + 0.72% O-2 + He mixtures. Minor C amts. were left in the coatings. FTIR, XSP, AFM patterns and friction coeff. (0.5-0.7) data showed the coated surfaces to be smooth enough for micromech. appln. The 50 degrees C coats were moist and viscous.