Fabrication of high-dielectric-strength antiferroelectric (AFE) films on metallic foils is technically important for advanced power electronics. To that end, we have deposited crack-free Pb(0.92)La(0..08)Zr(0.95)Ti(0.05)O(33) (PLZT 8/95/5) films on nickel foils by chemical solution deposition. To eliminate the parasitic effect caused by the formation of a low-permittivity interfacial oxide, a conductive buffer layer of lanthanum nickel oxide (LNO) was coated by chemical solution deposition on the nickel foil before the deposition of PLZT. Use of the LNO buffer allowed high-quality film-on-foil capacitors to be processed in air. With the PLZT 8/95/5 deposited on LNO-buffered Ni foils, we observed field- and thermal-induced phase transformations of AFE to ferroelectric (FE). The AFE-to-FE phase transition field, E(AF) = 225 kV/cm, and the reverse phase transition field, E(FA) = 190 kV/cm, were measured at room temperature on a approximate to 1.15 mu m-thick PLZT 8/95/5 film grown on LNO-buffered Ni foils. The relative permittivities of the AFE and FE states were approximate to 600 and approximate to 730, respectively, with dielectric loss approximate to 0.04 at room temperature. The Curie temperature was approximate to 210 degrees C . The thermal-induced transition of AFE-to-FE phase occurred at approximate to 175 degrees C. Breakdown field strength of 1.2 MV/cm was measured at room temperature. (C) 2008 Elsevier Ltd. All rights reserved.