X-ray diffraction analysis of GaSe thin films used in the present investigation showed that the as-deposited and the one deposited at higher substrate temperature are in amorphous and polycrystalline state, respectively. The alternating current (ac) conduction properties of thermally evaporated films of GaSe were studied ex situ employing symmetric aluminium ohmic electrodes in the frequency range of 120-10(5) Hz at various temperature regimes. For the film deposited at elevated substrate temperature (573 K) the ac conductivity was found to increase with improvement of its crystalline structure. The ac conductivity (sigma(ac)) is found to be proportional to (omega(s)) where s < 1. The temperature dependence of ac conductivity and the parameter, s, is reasonably well interpreted by the correlated barrier-hopping (CBH) model. The maximum barrier heights W-m, calculated from ac conductivity measurements are compared with optical studies of our previous reported work for a-GaSe and poly-GaSe thin films. The distance between the localized centres (R), activation energy (DeltaE(sigma)) and the number of sites per unit energy per unit volume N(E-F) at the Fermi level were evaluated for both a-GaSe and poly-GaSe thin films. Goswami and Goswami model has been invoked to explain the dependence of capacitance on frequency and temperature. (C) 2004 Elsevier Ltd. All rights reserved.