With the design of smaller devices, the film-deposition process in production of the next generation of semiconductors requires improvement of film quality and lowering of process temperature. In particular, it is necessary to fill a detailed pattern precisely with high-quality film. Liquid-phase crystal growth allows production of high-quality crystals or films at a high growth rate and low temperature and is a promising technology as a future deposition method for semiconductor devices. As a first step in basic research, the present study employed potassium nitrate (KNO(3)) as a model material and confirmed the effects of temperature distribution control and non-contact control by a magnetic field in controlling the gap fill morphology of the liquid-phase crystal growth.