In electronics processes, downsizing of various electronic parts and the increase in load of semiconductor elements cause increase in heat production. Therefore, AIN with high thermal conductivity, radiativity, and expansibility similar to Si is utilized as semiconductor packaging materials. For this purpose, highly purified AIN is required, as the desired properties of AIN are rapidly lost with the increase in concentration of impurities. In recent years, AIN is manufactured by the direct nitriding and the carbothermal reduction methods. However, these methods have the problems of high reaction temperature (1500° C) and difficulties in continuous operation. In the present study, we synthesized AIN fine powder by direct nitriding method in a fluidized bed. The present process is expected to allow the continuous production of AIN fine powder with high conversion rate at relatively low temperature, because fluidized bed method gives excellent heat exchange; Al material is melted and distributed in the bed. To find suitable operation conditions for efficient continuous synthesis of AIN in a fluidized bed with bed materials of AIN, various operational conditions were tested. It was demonstrated high purity AIN could be produced without containing unreacted Al at relatively low temperature (1200° C). However, part of the product was obtained not as fine powder but as agglomerates.