Deposition of amorphous iron(III)-oxide films on a conducting glass substrate was achieved via a cathodic bias in a 0.1 M hydrated ammonium iron(II) sulfate ((NH4)(2)Fe(SO4)(2)center dot 6H(2)O) Solution at -1.6 V versus Ag/AgCl. Analysis by X-ray absorption near edge structure confirmed the iron(III) feature of the amorphous films. The deposited films exhibited n-type semiconducting characteristics by showing photoresponses under an anodic bias. The Mott-Schottky method and cyclic voltammetry were employed to characterize the semiconducting properties of the deposited films, which included the band gap (2.2 eV), the potentials of the conduction and valence band edges and flat band (-0.6, +1.6 and -0.58 V versus Ag/AgCl at pH 7, respectively), and the donor density (1 x 10(22)/cm(3)). The deposited iron(III)-oxide films were suitable to serve as an anode for water splitting under illumination. (C) 2007 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.