A unique configuration of PbZr(0.4)Ti(0.6)O(3) multilayer stack was designed and grown on F-doped tin oxide thin film by spin casting and annealing process. The multilayer system exhibits a broad reflection band with peak reflectivity over 95% and band width no < 40 nm, a dielectric constant of 520 and dielectric tunability of similar to 49% at 1 MHz, a remanent polarization of 46.8 mu C/cm(2), and a polarization loss of < 5% after 10(9) polarization switching cycles, rendering excellent performance as 1D photonic crystals and as ferroelectric and dielectric media. This material structure may find application in photonic bandgap engineering, microwave tunable devices, and integrated optoelectronics.