Journal of the American Ceramic Society, Vol.93, No.6, 1583-1585, 2010
Growth and Electric Properties of MPB BiScO3-PbTiO3 Thin Films on La0.7Sr0.3MnO3-Coated Silicon Substrates
Morphotropic phase boundary BiScO3-PbTiO3 (BSPT) thin films were fabricated using La0.7Sr0.3MnO3 (LSMO) as bottom electrodes on silicon substrates via a sol-gel method. Pt/BSPT/Pt systems were also prepared as the comparison. Both BSPT and LSMO were well crystallized and pure perovskite phases were observed through the X-ray diffraction measurement. Well-saturated polarization hysteresis loops were obtained. A much bigger remanent polarization (P-r) of BSPT/LSMO was acquired than that of BSPT/Pt. The remanent polarization and coercive field of BSPT/LSMO were 28 mu C/cm2 and 200 kV/cm, respectively. The films had a room-temperature dielectric constant of 720. The room-temperature piezoelectric coefficient d(33) of 35 pm/V was observed, which was better than that of BPST/Pt that had been reported.