Journal of the American Ceramic Society, Vol.93, No.6, 1537-1539, 2010
Preparation and Characterization of a New Microwave Dielectric Ceramic Ba4ZnTi11O27
Preparation, sintering behavior, and microwave dielectric properties of Ba4ZnTi11O27 ceramic were investigated. The single-phase Ba4ZnTi11O27 ceramic can be well densified in the temperature range from 1175 degrees to 1250 degrees C with a relative density about 97%. X-ray diffraction data show that Ba4ZnTi11O27 has a monoclinic structure (C2/m), with lattice parameters of a=19.81549 A, b=11.43072 A, and c=9.91129 A when the sintering temperature is 1200 degrees C. Pure monoclinic Ba4ZnTi11O27 ceramic sintered at 1200 degrees C for 2 h exhibits good microwave dielectric properties with a permittivity about 36.8, Q x f value about 16 460 GHz, and temperature coefficient of resonant frequency about 17.2 ppm/degrees C. The addition of BaCu(B2O5) can effectively lower the sintering temperature from 1200 degrees to 925 degrees C and does not induce degradation of the microwave dielectric properties. Obviously, the Ba4ZnTi11O27 ceramic can be applied to microwave low-temperature cofired ceramics devices.