Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.7, No.9 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (30 articles)

B31 - B33	Spectroscopic elucidation of the repassivation of active sites on aluminum by chromate conversion coating Chidambaram D, Halada GP, Clayton CR
C91 - C94	Increased metallic character of electrodeposited Mn coatings using metal ion additives Gong J, Zangari G
C95 - C97	Coherent microradiology directly observes a critical cathode-anode distance effect in localized electrochemical deposition Seol SK, Yi JM, Jin X, Kim CC, Je JH, Tsai WL, Hsu PC, Hwu Y, Chen CH, Chang LW, Margaritondo G
C98 - C100	Superfilling evolution in Cu electrodeposition - Dependence on the aging time of the accelerator Kim SK, Kim JJ
D11 - D13	Epitaxial growth of Fe films on n-type GaAs by electrodeposition Liu YK, Scheck C, Schad R, Zangari G
E35 - E39	Two-dimensional structure induced K+ and Na+ recognition by self-assembled anthraquinone-polyether monolayers on gold electrodes Gao ZQ, Jiang ZX
F49 - F53	Plasma modification of porous low-k dielectrics Le QT, Whelan CM, Struyf H, Bender H, Conard T, Brongersma SH, Boullart W, Vanhaelemeersch S, Maex K
H33 - H35	Characterization of AlON-TiON stacked insulators for ZnS : Mn thin film electroluminescent devices Lim JW, Yun SJ
H36 - H38	Enhanced photoluminescence of PPV thin film coated on a nanostructured substrate by glancing angle deposition Karabacak T, Wiegand C, Senkevich J, Lu T, Jia DD, Fernandez F
J33 - J35	Improvement of ATO electrode stability by doping with a trace amount of Ir Chen XM, Chen GH
J36 - J40	Lithium phosphorus oxynitride thin film fabricated by a nitrogen plasma-assisted deposition of E-beam reaction evaporation Liu WY, Fu ZW, Li CL, Qin QZ
A259 - A263	A boundary condition for porous electrodes Subramanian VR, Tapriyal D, White RE
A264 - A268	Electrochemical capacitors based on exfoliated graphite electrodes Mitra S, Sampath S
A269 - A272	Magnetic resonance imaging of the water distribution within a polymer electrolyte membrane in fuel cells Tsushima S, Teranishi K, Hirai S
A273 - A277	Graphite/electrolyte interface formed in LiBOB-based electrolytes - I. Differentiating the roles of EC and LiBOB in SEI formation Xu K, Lee U, Zhang SS, Allen JL, Jow TR
A278 - A281	Electrochemical reaction between lithium and beta-quartz GeO2 Pena JS, Sandu I, Joubert O, Pascual FS, Arean CO, Brousse T
A282 - A285	Performance of GDC-impregnated Ni anodes of SOFCs Jiang SP, Zhang S, Zhen YD, Koh AP
A286 - A289	Well-dispersed multiwalled carbon nanotubes supported platinum nanocatalysts for oxygen reduction Li XG, Ge SH, Hui CL, Hsing IM
A290 - A293	Electrochemical activity of Li in the transition-metal sites of O3Li[Li(1-2x)/3Mn(2-x)/3Nix]O-2 Grey CP, Yoon WS, Reed J, Ceder G
A294 - A298	Overcapacity of Li[NixLi1/3-2x/3Mn2/3-x/3]O-2 electrodes Robertson AD, Bruce PG
C101 - C103	Additive-free superfilling in damascene Cu Electrodeposition using microcontact printing Kim SK, Kim JJ
C104 - C106	An improved approach for two-level microstructure fabrication Wang Y, Zhu CC, Li Y, Wu CY
C107 - C110	Underpotential deposition of copper on electrochemically prepared conductive ruthenium oxide surface Zhang YB, Huang L, Arunagiri TN, Ojeda O, Flores S, Chyan O, Wallace RM
G179 - G181	Formation of nonalloyed low resistance Ni/Au ohmic contacts to p-type GaN using Au nanodots Sohn JI, Song JO, Leem DS, Lee S, Seong TY
G182 - G184	Anomalous hall effect in manganese ion-implanted highly carbon-doped gallium arsenide Lim JD, Suh KS, Shim SB, Abernathy CR, Pearton SJ, Wilson RG, Park YD
G185 - G187	Investigation of a two-layer gate insulator using plasma-enhanced ALD for ultralow temperature poly-Si TFTs Lim JW, Yun SJ, Kim YH, Sohn CY, Lee JH
G188 - G191	Reduction of surface-induced current collapse in AlGaN/GaN HFETs on freestanding GaN substrates Irokawa Y, Luo B, Ren F, Gila BP, Abernathy CR, Pearton SJ, Pan CC, Chen GT, Chyi JI, Park SS, Park YJ
G192 - G194	Proposal of a novel gettering technique for a thin SOI wafer Kishino S, Yoshida H, Kitai N
G195 - G197	Pulsed CVD of tungsten thin film as a nucleation layer for tungsten plug-fill Kim SH, Hwang ES, Han SY, Pyi SH, Kawk N, Sohn H, Kim J, Choi GB
G198 - G200	A MONOS-type flash memory using a high-k HfAlO charge trapping layer Tan YN, Chim WK, Cho BJ, Choi WK