C51 - C55 |
Fractal photocorrosion of silicon electrodes in concentrated ammonium fluoride Lublow M, Lewerenz HJ |
D85 - D87 |
Tribological behaviors of amorphous cr coatings electrodeposited from Cr(III) baths under ionic liquid lubrication Zeng ZX, Chen YM, Wang D, Zhang JY |
F31 - F33 |
Adjustable full-color-emitting Dy3+-Activated SrB4O7 by codoping Zn2+ Gou J, Wang YH, Li F |
F34 - F37 |
Controlled anodic treatments on boron-doped diamond electrodes monitored by contact angle measurements Girard HA, de la Rochefoucauld E, Ballutaud D, Etcheberry A, Simon N |
G47 - G50 |
Characterizations of Gd(Fe1-xInx)O-3 films prepared by chemical solution deposition Kuo DH, Huang KC |
G51 - G53 |
Coexistence of bipolar and unipolar resistive switching behaviors in a Pt/TiO2/Pt stack Jeong DS, Schroeder H, Waser R |
G54 - G57 |
Physical and electrical properties of Ti-doped Er2O3 films for high-k gate dielectrics Liu CH, Pan TM, Shu WH, Huang KC |
G58 - G61 |
Studies on leakage mechanisms and electrical properties of doped BiFeO3 films Lee CC, Wu JM |
J83 - J85 |
Cu/CuMg gate electrode for the application of hydrogenated amorphous silicon thin-film transistors Wang MC, Chang TC, Liu PT, Li YY, Xiao RW, Lin LF, Chen JR |
J86 - J88 |
Planarity improvement and reduction of coercivity by organic additives in electroplated ni-fe permalloy thin films Bang W, Hong K |
J89 - J91 |
Enhanced planar poly-Si TFT EEPROM cell for system on panel applications Liu PT, Huang CS, Chen CW |
J92 - J96 |
Process technology for high-resolution AM-PLED displays on flexible metal-foil substrates Chuang TK, Troccoli M, Kuo PC, Jamshidi-Roudbari A, Hatalis M, Voutsas AT, Afentakis T |
J97 - J100 |
High-yield synthesis of single-crystalline Gd2O3 : Eu nanoplates using a pulp precursor Park JK, Kim KN, Bae PK, Lee JH, Han CH, Kim CH |
K33 - K37 |
Core-shell and hollow microspheres composed of tin oxide nanocrystals as anode materials for lithium-ion batteries Li M, Lu QH, Nuli Y, Qian XF |
P19 - P22 |
An electrogenerated chemical-oxidation-driving nonvolatile plastic memory device with the conjugated Polymer/Carbon nanotube blend Yang CH, Tan ZA, Fan BH, Sun QJ, Li YF, Zhou XH, Pei J, Qin YJ, Guo ZX |
A177 - A179 |
Design and fabrication of lightweight, submillimeter tubular solid oxide fuel cells Suzuki T, Funahashi Y, Yamaguchi T, Fujishiro Y, Awano M |
A180 - A183 |
Pt-embedded MoO3 electrodes for rechargeable lithium batteries Kim YS, Ahn HJ, Shim HS, Nam SH, Seong TY, Kim WB |
A184 - A188 |
Propagation of surface-assisted side reactions, a main cause for capacity fading of vanadium oxide nanograins Tanguy F, Gaubicher J, Soudan P, Bourgeon-Martin N, Mauchamp V, Guyomard D |
A189 - A193 |
An anode material of CrN for lithium-ion batteries Sun Q, Fu ZW |
A194 - A197 |
Electron diffraction study of the layered Li-y(Ni0.425Mn0.425Co0.15)(0.88)O-2 materials reintercalated after two different states of charge Weill F, Tran N, Martin N, Croguennec L, Delmas C |
B119 - B121 |
Gd0.6Sr0.4Fe0.8Co0.2O3-delta: A novel type of SOFC cathode Hansen KK, Sogaard M, Mogensen M |
B122 - B125 |
An improved catalyst-coated membrane structure for PEM water electrolyzer Song S, Zhang H, Liu B, Zhao P, Zhang Y, Yi B |
B126 - B129 |
Direct methanol-hydrogen fuel cell Kulikovsky AA, Schmitz H, Wippermann K |
B130 - B133 |
High electrocatalytic activity of platinum nanoparticles on SnO2 nanowire-based electrodes Saha MS, Li RY, Cai M, Sun XL |
H221 - H223 |
The effect of H-treatment on Au-induced lateral crystallization of phosphorus-doped a-Si : H films Chiang YT, Fang YK, Lin KC, Chou TH, Chen SF |
H224 - H226 |
Amorphous silicon thickness effect on formation of silicon nanostructures by aluminum-induced crystallization of amorphous silicon Wang H, Zou M |
H227 - H231 |
Nanoparticle removal mechanisms during Post-CMP cleaning Ng D, Huang PY, Jeng YR, Liang H |
H232 - H234 |
Memory functions of amorphous silicon-based floating gate MIS capacitors Nominanda H, Kuo Y |
H235 - H238 |
Degradation behaviors of trigate nanowires poly-si TFTs with NH3 plasma passivation under hot-carrier stress Wu YC, Chang TC, Liu PT, Feng LW |
H239 - H242 |
Effects of physical treatment of ITO electrodes on the electrical properties of pentacene thin-film transistors Lee HS, Cho JH, Kim WK, Lee JL, Cho K |