Electrochemical and Solid State Letters

Electrochemical and Solid State Letters, Vol.3, No.1 Entire volume, number list

ISSN: 1099-0062 (Print)

In this Issue (19 articles)

1 - 3	Preparation of carbon electrodes for electronic double-layer capacitors by carbonization of metal-ion-exchanged resins Sakata Y, Muto A, Uddin A, Yamada N, Marumo C, Ibaraki S, Kojima K
4 - 6	Reduced poisoning of platinum fuel-cell electrocatalysts supported on desulfurized carbon Swider KE, Rolison DR
7 - 9	Overcoming Jahn-Teller distortion for spinel Mn phase Sun YK, Jeon YS, Lee HJ
10 - 12	Preparation and characterization of high-performance Pt-Ru/WO3/C anode catalysts for the oxidation of impure hydrogen Chen KY, Sun Z, Tseung ACC
13 - 16	Intermetallic insertion electrodes with a zinc blende-type structure for Li Batteries: A study of LixInSb (0 <= x <= 3) Vaughey JT, O'Hara J, Thackeray MM
17 - 19	Etching of CoNbZr alloys in HF-free aqueous solutions Baarslag PC, de Nooijer MC, van den Meerakker JEAM
20 - 23	Electrochemically synthesized Co and Fe nanowires and nanotubes Tourillon G, Pontonnier L, Levy JP, Langlais V
24 - 27	A SQUID study of magnetic fields resulting from in situ corrosion reactions Juzeliunas E, Samuleviciene M, Sudavicius A, Hinken JH
28 - 30	Graph theory and the passivity of iron-chromium binary alloys McCafferty E
31 - 34	Magnesium deposition and dissolution processes in ethereal grignard salt solutions using simultaneous EQCM-EIS and in situ FTIR spectroscopy Aurbach D, Moshkovich M, Schechter A, Turgeman R
35 - 38	Scanning electrochemical microscopy with shear force feedback -Investigation of the lateral resolution of different experimental configurations Buchler M, Kelley SC, Smyrl WH
39 - 40	Electrical characteristics of polyoxide prepared by N-2 preannealing Chang KM, Lee TC, Wang JY
41 - 43	Chemical bonding and stability of 50 degrees C plasma-deposited silicon nitrides Bae S, Farber DG, Fonash SJ
44 - 46	Structural fabrication using cesium chloride island arrays as a resist in a fluorocarbon reactive ion etching plasma Tsuchiya S, Green M, Syms RRA
47 - 49	Etching of silicon by the RCA Standard Clean 1 Celler GK, Barr DL, Rosamilia JM
50 - 52	An asymmetric channel SOI nMOSFET for reducing parasitic effects and improving output characteristics Pavanello MA, Martino JA, Dessard V, Flandre D
53 - 55	Transparent Pt ohmic contact on p-type GaN with low resistivity using (NH4)(2)S-x treatment Lee JL, Kim JK, Lee JW, Park YJ, Kim T
56 - 58	Novel dual gate oxide process with improved gate oxide integrity reliability Lee SW, Cho IH, Park SH, Choi HG, Kim NG, Jung JW, Kim JK, Han SB
59 - 61	Oxygen transport in oxide thin film structures oriented La0.5Sr0.5CoO3-x on single-crystal yttria-stabilized zirconia Mims CA, Joos NI, van der Heide PAW, Jacobson AJ, Chen C, Chu CW, Kim BI, Perry SS