Applied Surface Science

Applied Surface Science, Vol.224, No.1-4 Entire volume, number list

ISSN: 0169-4332 (Print)

In this Issue (87 articles)

1 - 2	Proceedings of the First International SiGe Technology and Device Meeting (ISTDM 2003) - From materials and process technology to device and circuit technology - 15-17 January, 2003 - Nagoya University Symposion, Nagoya, Japan - Preface Murota J, Tillack B, Caymax M, Sturm J, Yasuda Y, Zaima S
3 - 8	Challenges of high Ge content silicon germanium structures Kasper E, Heim S
9 - 17	The revolution in SiGe: impact on device electronics Harame DL, Koester SJ, Freeman G, Cottrel P, Rim K, Dehlinger G, Ahlgren D, Dunn JS, Greenberg D, Joseph A, Anderson F, Rieh JS, Onge SAST, Coolbaugh D, Ramachandran V, Cressler JD, Subbanna S
18 - 23	Selective epitaxial growth of SiGe : C for high speed HBTs Schafer H, Bock J, Stengl R, Knapp H, Aufinger K, Wurzer M, Boguth S, Rest M, Schreiter R, Meister TF
24 - 30	Avoiding loading effects and facet growth - Key parameters for a successful implementation of selective epitaxial SiGe deposition for HBT-BiCMOS and high-mobility hetero-channel pMOS devices Loo R, Caymax M
31 - 35	N-2 as carrier gas: an alternative to H-2 for enhanced epitaxy of Si, SiGe and SiGe : C Meunier-Beillard P, Caymax M, Van Nieuwenhuysen K, Doumen G, Brijs B, Hopstaken M, Geenen L, Vandervorst W
36 - 40	Production-ready dry cleaning and deposition processes for low-temperature Si and SiGe epitaxy Buschbeck HM, Erhart A, Goeggel Y, Rosenblad C, Wiltsche S, Ramm J, Dommann A, Kummer M
41 - 45	Low temperature, high growth rate epitaxial silicon and silicon germanium alloy films Todd MA, Weeks KD
46 - 50	Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition Hallstedt J, Suvar E, Persson POA, Hultman L, Wang YB, Radamson HH
51 - 54	Characterization of Ge gradients in SiGeHBTs by AES depth profile simulation Kruger D, Penkov A, Yamamoto Y, Goryachko A, Tillack B
55 - 58	High performance SiGe : C HBTs using atomic layer base doping Tillack B, Yamamoto Y, Knoll D, Heinemann B, Schley P, Senapati B, Kruger D
59 - 62	On the mechanism of ion-implanted As diffusion in relaxed SiGe Eguchi S, Lee JJ, Rhee SJ, Kwong DL, Lee ML, Fitzgerald EA, Aberg I, Hoyt JL
63 - 67	A new technique to fabricate ultra-shallow-junctions, combining in situ vapour HCl etching and in situ doped epitaxial SiGe re-growth Loo R, Caymax M, Meunier-Beillard P, Peytier I, Holsteyns F, Kubicek S, Verheyen P, Lindsay R, Richard O
68 - 72	In situ B doping of SiGe(C) using BCl3 in ultraclean hot-wall LPCVD Kunii Y, Inokuchi Y, Moriya A, Kurokawa H, Murota J
73 - 76	Low-temperature dopant activation technology using elevated Ge-S/D structure Takeuchi H, Ranade P, King TJ
77 - 81	Relationship between impurity (B or P) and carrier concentration in SiGe(C) epitaxial film produced by thermal treatment Noh J, Takehiro S, Sakuraba M, Murota J
82 - 86	Characterization of As+ ion-implanted layers in strained-Si/SiGe/Si hetero-structures Ishida T, Irieda S, Inada T, Sugii N
87 - 90	Segregation of boron to polycrystalline and single-crystal Si-1-(x)-yGexCy and Si1-yCy layers Stewart EJ, Sturm JC
91 - 94	Development of a new type of SiGe thin strain relaxed buffer based on the incorporation of a carbon-containing layer Delhougne R, Meunier-Beillard P, Caymax M, Loo R, Vandervorst W
95 - 98	Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate Kutsukake K, Usami N, Fujiwara K, Ujihara T, Sazaki G, Nakajima K, Zhang BP, Segawa Y
99 - 103	Formation of thin SiGe virtual substrates by ion implantation into Si substrates Sawano K, Koh S, Hirose Y, Hattori T, Nakagawa K, Shiraki Y
104 - 107	Strain-relaxation mechanisms of SiGe layers formed by two-step growth on Si(001) substrates Egawa T, Sakai A, Yamamoto T, Taoka N, Nakatsuka O, Zaima S, Yasuda Y
108 - 112	Dislocation structures and strain-relaxation in SiGe buffer layers on Si(001) substrates with an ultra-thin Ge interlayer Yamamoto T, Sakai A, Egawa T, Taoka N, Nakatsuka O, Zaima S, Yasuda Y
113 - 116	Strain relaxation of strained-Si layers on SiGe-on-insulator (SGOI) structures after mesa isolation Usuda K, Mizuno T, Tezuka T, Sugiyama N, Moriyama Y, Nakaharai S, Takagi S
117 - 121	Influence of Si1-xGex interlayer on the initial growth of SiGeC on Si(100) Ariyoshi S, Takeuchi S, Nakatsuka O, Sakai A, Zaima S, Yasuda Y
122 - 126	Roughening mechanisms of tensily strained Si1-x-yGexCy films grown by UHV-CVD: evidence of a carbon surface diffusion related mechanism Calmes C, Bouchier D, Clerc C, Zheng YL
127 - 133	Intermixing in Ge hut cluster islands Denker U, Sigg H, Schmidt OG
134 - 138	Selective epitaxial growth of Ge quantum dots on patterned SiO2/Si(001) surfaces Nguyen LH, LeThanh V, Debarre D, Yam V, Halbwax M, El Kurdi M, Bouchier D, Rosner P, Becker M, Benamara M, Strunk HP
139 - 142	Shape and composition change of Ge dots due to Si capping Kirfel O, Muller E, Grutzmacher D, Kern K, Hesse A, Stangl J, Holy V, Bauer G
143 - 147	Kinetics of Si capping process of Ge/Si(001) quantum dots Yam V, Le Thanh V, Debarre D, Zheng Y, Bouchier D
148 - 151	Optical properties of stacked Ge/Si quantum dots with different spacer thickness grown by chemical vapor deposition Chen WY, Chang WH, Chou AT, Hsu TM, Chen PS, Pei ZW, Lai LS
152 - 155	Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments Lee SW, Chen LJ, Chen PS, Tsai MJ, Liu CW, Chen WY, Hsu TM
156 - 159	Influence of thermal annealing on compositional mixing and crystallinity of highly selective grown Si dots with Ge core Darma Y, Murakami H, Miyazaki S
160 - 164	Coupling effect dependent on the thickness of the spacer layer between double layers of quantum dots Rao Y, Gao Q, Jiang ZM, Lu F
165 - 169	Room temperature 1.3 and 1.5 mu m electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers Pei Z, Chen PS, Lee SW, Lai LS, Lu SC, Tsai MJ, Chang WH, Chen WY, Chou AT, Hsu TM
170 - 174	SiGePIN photodetector for infrared optical fiber links operating at 1.25 Gbit/s Jutzi M, Berroth M, Wohl G, Parry C, Oehme M, Bauer M, Schollhorn C, Kasper E
175 - 178	Fabrication of epitaxial SiGe optical waveguide structures Kim YW, Berlin D, Samoilov A
179 - 182	GeH4 adsorption on Si(001) at RT: transfer of H atoms to Si sites and atomic exchange between Si and Ge Murata T, Suemitsu M
183 - 187	Adsorption kinetics of dimethylsilane at Si(001) Senthil K, Nakazawa H, Suemitsu M
188 - 192	Kinetics of epitaxial growth of Si and SiGe films on (110)Si substrates Sugiyama N, Moriyama Y, Nakaharai S, Tezuka T, Mizuno T, Takagi S
193 - 196	Local atomic structure in Czochralski-grown Ge1-xSix bulk alloys Yonenaga I, Sakurai M, Sluiter MHF, Kawazoe Y
197 - 201	Epitaxial growth of N delta doped Si films on Si(100) by alternately supplied NH3 and SiH4 Jeong YC, Sakuraba M, Murota J
202 - 205	Formation of heavily P-doped Si epitaxial film on Si(100) by multiple atomic-layer doping technique Shimamune Y, Sakuraba M, Murota J, Tillack B
206 - 209	Effect of carbon on the thermal stability of a Si atomic layer on Ge(100) Fujiu M, Takahashi K, Sakuraba M, Murota J
210 - 214	Ar plasma irradiation effects in atomically controlled Si epitaxial growth Muto D, Sakuraba M, Seino T, Murota J
215 - 221	Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts Zaima S, Nakatsuka O, Sakai A, Murota J, Yasuda Y
222 - 226	Reactive ion etching of Si1-xGex alloy with hydrogen bromide Wang CS, Shu DY, Hsieh WY, Tsai MJ
227 - 230	Ge-dependent morphological change in poly-SiGe formed by Ni-mediated crystallization Sadoh T, Kanno H, Kenjo A, Miyao M
231 - 234	Enhanced crystal nucleation in a-SiGe/SiO2 by ion-irradiation assisted annealing Tsunoda I, Kenjo A, Sadoh T, Miyao M
235 - 240	Numerical simulation of strained Si/SiGe devices: the hierarchical approach Meinerzhagen B, Jungemann C, Neinhus B, Bartels M
241 - 247	Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS Takagi SI, Mizuno T, Tezuka T, Sugiyama N, Numata T, Usuda K, Moriyama Y, Nakaharai S, Koga J, Tanabe A, Maeda T
248 - 253	Mobility and performance enhancement in compressively strained SiGe channel PMOSFETs Shi ZH, Onsongo D, Banerjee SK
254 - 259	Fabrication of 0.12 mu m pMOSFETs on high Ge fraction Si/Si1-xGex/Si(100) heterostructure with ultrashallow source/drain formed using B-doped SiGeCVD Lee D, Takehiro S, Sakuraba M, Murota J, Tsuchiya T
260 - 264	SiGe elevated source/drain structure and nickel silicide contact layer for sub 0.1 mu m MOSFET fabrication Shim J, Oh H, Choi H, Sakaguchi T, Kurino H, Koyanagi M
265 - 269	Low-frequency noise suppression and dc characteristics enhancement in sub-mu m metamorphic p-MOSFETs with strained Si0.3Ge0.7 channel grown by MBE Myronov M, Durov S, Mironov OA, Parker EHC, Whall TE, Hackbarth T, Hock G, Herzog HJ, Konig U
270 - 273	Proposal of a multi-layer channel MOSFET: the application of selective etching for Si/SiGe stacked layers Sasaki D, Ohmi S, Sakuraba M, Murota J, Sakai T
274 - 277	Electrical properties Of Si1-yCy/Si/SiO2 interface for sub 50 nm strained-channel nMOSFETs Ducroquet F, Ernst T, Weber O, Hartmann JM, Loup V, Besson P, Brevard L, Di Maria JL, Deleonibus S
278 - 282	Analysis of carrier generation lifetime in strained-Si/SiGe heterojunction MOSFETs from capacitance transient Bera LK, Mathew S, Balasubramanian N, Braithwaite G, Currie MT, Singaporewala F, Yap J, Hammond R, Lochtefeld A, Bulsara MT, Fitzgerald EA
283 - 287	Minority carrier lifetime and diffusion length in Si1-x-yGexCy and Si1-yCy heterolayers Samanta SK, Dalapati GK, Chatterjee S, Maiti CK
288 - 291	Electrical propel-ties of ZrO2 films on Si1-x-yGexCy epitaxial layers Chatterjee S, Dalapati GK, Samanta SK, Maiti CK
292 - 296	Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth Loo R, Collaert N, Verheyen P, Caymax M, Delhougne R, De Meyer K
297 - 305	Circuit applications of high-performance SiGe : C HBTs integrated in BiCMOS technology Winkler W, Borngraber J, Heinemann B, Rucker H, Barth R, Bauer J, Bolze D, Drews J, Ehwald KE, Grabolla T, Haak U, Hoppner W, Knoll D, Kruger D, Kuck B, Kurps R, Marschmeyer M, Richter H, Schley P, Schmidt D, Scholz R, Tillack B, Wolansky D, Wulf HE, Yamamoto Y, Zaumseil P
306 - 311	High-speed SiGeHBTs and their applications Washio K
312 - 319	The state-of-the-art in simulation for optimization of SiGe-HBTs Palankovski V, Selberherr S
320 - 323	Influence of the extrinsic base on the base current kink in SiGeBJTs Sadovnikov A, Krakowski T, El-Diwany M
324 - 329	Design and optimization of a 200 GHz SiGeHBT collector profile by TCAD Stricker AD, Johnson JB, Freeman G, Rieh JS
330 - 335	The effect of C on emitter-base design for a single-polysilicon SiGe : C HBT with an IDP emitter Haralson E, Suvar E, Malm G, Radamson H, Wang YB, Ostling M
336 - 340	Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure Suvar E, Haralson E, Radamson HH, Wang YB, Grahn JV, Malm BG, Ostling M
341 - 346	Reliability properties of SiGeHBTs Rennane A, Bary L, Roux JL, Kuchenbecker J, Graffeuil J, Plana R
347 - 349	Achieving a SiGeHBT epitaxial emitter with novel low thermal budget technique Brabant P, Wen JQ, Italiano J, Landin T, Cody N, Haen L
350 - 353	Evaluation of compact noise modeling for Si/SiGe HBTs based on hierarchical hydrodynamic noise simulation Bartels M, Neinhus B, Jungemann C, Meinerzhagen B
354 - 360	Comparison of state-of-the-art bipolar compact models for SiGe-HBTs Chakravorty A, Garg R, Maiti CK
361 - 364	Rigorous modeling approach to numerical simulation of SiGeHBTs Palankovski V, Rohrer G, Grasser T, Smirnov S, Kosina H, Selberherr S
365 - 369	Direct extraction feature for scattering parameters of SiGe-HBTs Wagner S, Palankovski V, Rohrer G, Grasser T, Selberherr S
370 - 376	Microwave performances of silicon heterostructure-FETs Aniel F, Enciso M, Richard S, Giguerre L, Zerounian N, Crozat P, Adde R, Hackbarth T, Herzog JH, Konig U
377 - 381	Resonant tunneling in Si-SiGe superlattices on relaxed buffer substrates Tsujino S, Mentese S, Diehl L, Muller E, Haas B, Bachle D, Stutz S, Grutzmacher D, Campidelli Y, Kermarrec O, Bensahel D
382 - 385	60 nm gate-length Si/SiGe HEMT Kasamatsu A, Kasai K, Hikosaka K, Matsui T, Mimura T
386 - 389	SiGe virtual substrate HMOS transistor for analogue applications Michelakis K, Despotopoulos S, Gaspari V, Vilches A, Fobelets K, Papavassiliou C, Toumazou C, Zhang J
390 - 393	Effect of temperature on the transfer characteristic of a 0.5 mu m-gate Si : SiGe depletion-mode n-MODFET Gaspari V, Fobelets K, Velazquez-Perez JE, Ferguson R, Michelakis K, Despotopoulos S, Papavassilliou C
394 - 398	Nonvolatile memory based on Ge/Si hetero-nanocrystals Yang HG, Shi Y, Pu L, Zhang R, Shen B, Han P, Gu SL, Zheng YD
399 - 404	Si/SiGe heterojunction collector for low loss operation of Trench IGBT Kudoh T, Asano T
405 - 409	High performance rf front end circuits using SiGe : C BiCMOS plus copper technologies Watanabe G, Ortiz J, Holbrook R
410 - 418	Low-cost circuit solutions for micro- and millimeter-wave systems using commercially available SiGe technologies Schumacher H, Abele P, Sonmez E, Schad KB, Trasser A
419 - 424	SiGe based low noise amplifier for WLAN applications Sadowy J, Dubuc D, Busquere JP, Grenier K, Telliez I, Graffeuil J, Tournier E, Plana R
425 - 428	The comparison of isolation technologies and device models on SiGe bipolar low noise amplifier Hua WC, Yang TY, Liu CW
429 - 433	A 4.4 to 5 GHz SiGe low noise amplifier Crippa P, Orcioni S, Ricciardi F, Turchetti C
434 - 438	A DC-5 GHz NMOSFET SPDT T/R switch in 0.25-mu m SiGeBiCMOS technology Crippa P, Orcioni S, Ricciardi F, Turchetti C