Journal of Crystal Growth

Journal of Crystal Growth, Vol.312, No.5 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (20 articles)

629 - 634	Effect of dislocation density on microchannel epitaxy of GaAs on GaAs/Si substrate Chang YS, Naritsuka S, Nishinaga T
635 - 640	MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires Sladek K, Klinger V, Wensorra J, Akabori M, Hardtdegen H, Grutzmacher D
641 - 644	Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content Gautier S, Orsal G, Moudakir T, Maloufi N, Jomard F, Alnot M, Djebbour Z, Sirenko AA, Abid M, Pantzas K, Ferguson IT, Voss PL, Ougazzaden A
645 - 650	Low-temperature homoepitaxial growth of 4H-SiC with CH3Cl and SiCl4 precursors Kotamraju S, Krishnan B, Melnychuk G, Koshka Y
651 - 655	Influence of substrate polarity of (0001) and (0 0 0 (1)over-bar)GaN surfaces on hydride vapor-phase epitaxy of InN Togashi R, Murakami H, Kumagai Y, Koukitu A
656 - 661	High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition Zervos M, Papageorgiou P, Othonos A
662 - 666	Microstructural properties and initial growth behavior of InN nanobats grown on a Si(111) substrate Kim YH, Yun WS, Ruh H, Kim CS, Kim JW, Shin YH, Kim MD, Oh JE
667 - 670	Structure and dielectric tunability of (Pb0.5Ba0.5)ZrO3 thin films derived on (Sr0.95La0.05)TiO3 buffer-layered substrates Hao XH, Zhai JW, Zhou J, Yang JC, Song XW, An SL
671 - 675	Epitaxial relationship of MBE grown barium hexaferrite (0001) films on sapphire (0001) Liu HY, Avrutin V, Xiao B, Rowe E, Liu HR, Ozgur U, Morkoc H
676 - 679	Vapor-phase epitaxy of high-crystallinity GaN films using Ga2O vapor and NH3 Imade M, Kishimoto H, Kawamura F, Yoshimura M, Kitaoka Y, Sasaki T, Mori Y
680 - 684	Effect of growth conditions on Eu3+ luminescence in GaN Wang R, Steckl AJ
685 - 691	Synthesis of nanostructures of copper compounds and their hybridisation with titanate nanosheets Bobowska I, Wojciechowski P
692 - 697	Seed-assistant hydrothermal synthesis of 3D Bi2S3 matlike architecture Tang CJ, Zhang YX, Dou XC, Li GH
698 - 704	Effect of cooling rate on the critical undercooling for crystallization Kashchiev D, Borissova A, Hammond RB, Roberts KJ
705 - 713	Novel morphologies and phase transformation of CaCO3 crystals formed in CDS and urea aqueous solution Nan ZD, Yang QQ, Chen ZY
714 - 719	The use of ionic liquids as crystallization additives allowed to overcome nanodrop scaling up problems: A success case for producing diffraction-quality crystals of a nitrate reductase Coelho C, Trincao J, Romao MJ
720 - 723	Crystal growth and laser performance of neodymium-doped scandium orthovanadate Yao B, Wu K, Zhang C, Zhang HJ, Wang ZP, Wang JY, Yu HH, Yu YG, Jiang MH
724 - 729	Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructures Adhikary S, Halder N, Chakrabarti S, Majumdar S, Ray SK, Herrera M, Bonds M, Browning ND
730 - 733	The melting behavior of lutetium aluminum perovskite LuAlO3 Klimm D
734 - 734	Enhancement effect of nitrogen co-doping on oxygen precipitation in heavily phosphorus-doped Czochralski silicon during high-temperature annealing (vol 311, pg 3273, 2009) Zeng YH, Chen JH, Ma MY, Wang WY, Yang DR