| 437 - 442 |
Distribution of components in Ge-Si bulk single crystals grown under the continuous feeding of the melt with the second component (Si)
Azhdarov GK, Kucukomeroglu T, Varilci A, Altunbas M, Kobya A, Azhdarov PG |
| 443 - 450 |
Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth
Nakahata T, Yamamoto K, Tanimura J, Inagaki T, Furukawa T, Maruno S, Tokuda Y, Miyamoto A, Satoh S, Kiyama H |
| 451 - 457 |
Dopant distribution in selectively regrown InP : Fe studied by time-resolved photoluminescence
Gaarder A, Marcinkevicius S, Messmer ER, Lourdudoss S |
| 458 - 472 |
Nucleation and morphology of barium carbonate crystals in a semi-batch crystallizer
Chen PC, Cheng GY, Kou MH, Shia PY, Chung PO |
| 473 - 480 |
Green to ultraviolet photoluminescence from CuAlxGa1-xS2 chalcopyrite semiconductor heteroepitaxial alloys grown by low-pressure metalorganic vapor phase epitaxy
Harada Y, Nakanishi H, Chichibu SF |
| 481 - 487 |
The growth of beta-LiGaO2 films using novel single precursors
Lee YK, Han SW, Lee SS, Kim CG, Kim Y |
| 488 - 492 |
Compositional study of LiNbO3 thin films grown by liquid phase epitaxy
Callejo D, Manotas S, Serrano MD, Bermudez V, Agullo-Rueda F, Dieguez E |
| 493 - 500 |
Initial preferred growth in zinc oxide thin films on Si and amorphous substrates by a pulsed laser deposition
Choi JH, Tabata H, Kawai T |
| 501 - 510 |
Global modeling of the SiC sublimation growth process: prediction of thermoelastic stress and control of growth conditions
Selder M, Kadinski L, Durst F, Hofmann D |
| 511 - 516 |
Defects in large single crystals Nd : YVO4
Hu BQ, Zhang YZ, Wu X, Chen XL |
| 517 - 520 |
MnSi similar to 1.73 grown on silicon with mass-analyzed low energy dual ion beam epitaxy technique
Yang JL, Chen NF, Liu ZK, Yang SY, Chai CL, Liao MY, He HJ |
| 521 - 528 |
Growth behavior of titanium boride films deposited on (100) Si by dual-electron-beam evaporation
Lee YK |
| 529 - 533 |
Study on the liquid inclusion induced light scatter in KDP crystal
Sun X, Xu XG, Sun DL, Wang ZP, Wang SL, Fu YJ, Zeng H, Li YP, Yu XL, Gao ZS |
| 534 - 542 |
Study of lysozyme crystal growth under a strong magnetic field using a Mach-Zehnder interferometer
Yin DC, Inatomi Y, Kuribayashi K |
| 543 - 554 |
Composition variations induced by g-jitter in Bridgman growth of Sn-Bi alloys in microgravity
Garandet JP, Alexander JID, Corre S, Favier JJ |
| 555 - 561 |
Analysis of crystal-meniscus system behaviour under Czochralski crystal growth
Antonov VA |
| 562 - 568 |
On a general back-diffusion parameter
Voller VR |
