| 181 - 186 |
Thermal annealing effect on InAs/InGaAs quantum dots grown by atomic layer molecular beam epitaxy
Shi GX, Jin P, Xu B, Li CM, Cui CX, Wang YL, Ye XL, Wu J, Wang ZG |
| 187 - 194 |
Ultrathin type-II GaSb/GaAs quantum wells grown by OMVPE
Pitts OJ, Watkins SP, Wang CX, Stotz JAH, Meyer TA, Thewalt MLW |
| 195 - 206 |
Correlation between dislocation etch pits and optical absorption in CdGeAs2
Nagashio K, Watcharapasorn A, Zawilski KT, DeMattei RC, Feigelson RS, Bai L, Giles NC, Halliburton LE, Schunemann PG |
| 207 - 212 |
A growth mechanism of Si nanowires synthesized by gas condensation of SiO without any catalyst
Zhou JF, Han M, Liu MD, Song FQ, Wan JG, Chen YF, Wang GH |
| 213 - 217 |
Cd1-xMnxS quantum dots: new synthesis and characterization
Pang Q, Guo BC, Yang CL, Yang SH, Gong ML, Ge WK, Wang JN |
| 218 - 228 |
Growth of GaAS crystals from Ga-rich melts by the VCz method without liquid encapsulation
Kiessling FM, Rudolph P, Neubert M, Juda U, Naumann M, Ulrici W |
| 229 - 234 |
Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy
Sun YJ, Yamamori M, Egawa T, Ishikawa H, Mito K |
| 235 - 241 |
Surfactant mediated growth of Sb clusters on Si(111) surface
Gruznev DV, Ohmura K, Saitoh M, Tsukabayashi S, Tambo T, Lifshits VG, Tatsuyama C |
| 242 - 248 |
Homoepitaxially grown GaN-based light-emitting diodes with peak emission at 405 nm
Cao XA, Yan CH, D'Evelyn MP, LeBoeuf SF, Kretchmer JW, Klinger R, Arthur SD, Merfeld DW |
| 249 - 256 |
Polarity inversion of GaN(0001) by a high Mg doping
Pezzagna S, Vennegues P, Grandjean N, Massies J |
| 257 - 261 |
Self assembled (In,Ga)As quantum structures on GaAs (411)A
Seydmohamadi S, Wang ZM, Salamo GJ |
| 262 - 269 |
Strain-mediated patterning of surface nanostructure by the subsurface island array
Ni Y, Soh AK, He LH |
| 270 - 275 |
Preparation GaxMn1-xN DMS materials using HVPE method
Yu YY, Zhang R, Xiu XQ, Xie ZL, Yu HQ, Shi Y, Shen B, Gu SL, Zheng YD |
| 276 - 283 |
Te surfactant effects on the morphology of patterned (001) GaAs homoepitaxy
Wixom RR, Rieth LW, Stringfellow GB |
| 284 - 291 |
Numerical modelling for convection in growth/dissolution of solid solution CdxHg1-xTe by liquid-phase epitaxy
Denisov IA, Mazhorova OS, Popov YP, Smirnova NA |
| 292 - 297 |
Study of cluster forming at growth of A3B5 semiconductor compounds from liquid phase
Khukhryansky YP, Shunikov EA, Emelyanov VV |
| 298 - 303 |
Enhancement of Curie temperature in Ga1-xMnxAs epilayers grown on cross-hatched InyGa1-yAs buffer layers
Maksimov O, Sheu BL, Xiang G, Keim N, Schiffer P, Samarth N |
| 304 - 309 |
Growth mechanism and photoluminescence of CdS nanobelts on Si substrate
Liu WF, Jia C, Jin CG, Yao LZ, Cai WL, Li XG |
| 310 - 316 |
Evolution of flow pattern defects in boron-doped < 100 > Czochralski silicon crystals during secco etching procedure
Zhang JF, Liu CC, Zhou QG, Wang J, Hao QY, Zhang HD, Li YX |
| 317 - 323 |
Synthesis and characterization of nanocrystalline mercury telluride by sonochemical method
Song H, Cho K, Kim H, Lee JS, Min B, Kim HS, Kim SW, Noh T, Kim S |
| 324 - 332 |
Phase relations and lattice parameters in the system SrO-BaO-Nb2O5 focusing on SBN (SrxBa1-xNb2O6)
Nikasch C, Gobbels M |
| 333 - 341 |
Single crystal growth and characterization of phase-matchable L-arginine maleate: a potential nonlinear optical material
Vasantha K, Dhanuskodi S |
| 342 - 346 |
High-speed float zone growth of rutile single crystals inclined at 48 degrees to the c-axis
Higuchi M, Sato C, Kodaira K |
| 347 - 355 |
Low-temperature preparation of titania nanorods through direct oxidation of titanium with hydrogen peroxide
Wu JM |
| 356 - 361 |
Molecular beam epitaxy of high-quality ZnO using hydrogen peroxide as an oxidant
Izyumskaya N, Avrutin V, Schoch W, El-Shaer A, Reuss F, Gruber T, Waag A |
| 362 - 366 |
MOCVD growth of self-arranged ZnO nanosize islands
Zhou X, Gu SL, Qin F, Zhu SM, Ye JD, Liu SM, Liu W, Zhang R, Shi Y, Zheng YD |
| 367 - 376 |
Homoepitaxial growth of 4H-SiC on on-axis (0001(-)) C-face substrates by chemical vapor depositon
Kojima K, Okumura H, Kuroda S, Arai K |
| 377 - 384 |
Low-temperature liquid-phase epitaxy and optical waveguiding of rare-earth-ion-doped KY(WO4)(2) thin layers
Romanyuk YE, Utke I, Ehrentraut D, Apostolopoulos V, Pollnau M, Garcia-Revilla S, Valiente R |
| 385 - 391 |
The characteristics of low-temperature-synthesized ZnS and ZnO nanoparticles
Lu HY, Chu SY, Tan SS |
| 392 - 400 |
Structural characterization of polycrystalline Sb2O3 thin films prepared by thermal vacuum evaporation technique
Tigau N, Ciupina V, Prodan G, Rusu GI, Vasile E |
| 401 - 407 |
Growth, structure and spectroscopic characterizations of Nd3+-doped LiLa(WO4)(2) crystal
Huang XY, Lin ZB, Hu ZS, Zhang LZ, Huang JS, Wang GF |
| 408 - 412 |
Substrate orientation dependence of In composition of AlGaInP epilayers grown by MOCVD
Dong JR, Chua SJ, Wang YJ, Yuan HR |
| 413 - 418 |
Epitaxial growth of SiC from Al-Si solution reacting with propane gas
Tanaka A, Ataka T, Ohkura E, Katsuno H |
| 419 - 424 |
Growth of Cd1-xZnxTe (x similar to 0.04) films by hot-wall method and its evaluation
Takahashi J, Mochizuki K, Hitomi K, Shoji T |
| 425 - 431 |
Growth and characterization of Zn-ZnO core-shell polygon prismatic nanocrystals on Si
Lin CC, Liu KH, Chen SY |
| 432 - 442 |
Characterization of bulk AlN with low oxygen content
Bickermann M, Epelbaum BM, Winnacker A |
| 443 - 447 |
Rapid growth of KDP crystal with new additive
Li GH, Su GB, Zhuang XX, Li ZD, He YP |
| 448 - 453 |
PVT growth of Cd1-xZnxTe(x similar to 0.04) films sensitive to radial rays
Takahashi J, Mochizuki K, Hitomi K, Shoji T |
| 454 - 463 |
Three-dimensional modelling of radial segregation due to weak convection
Do-Quang M, Amberg G, Carlberg T |
| 464 - 471 |
Growth and formation mechanism of c-oriented ZnO nanorod arrays deposited on glass
Zhang HZ, Sun XC, Wang RM, Yu DP |
| 472 - 478 |
Growth and modulation of silicon carbide nanowires
Choi HJ, Seong HK, Lee JC, Sung YM |
| 479 - 483 |
The post-annealing effects on the Stokes photoluminescence spectra of erbium-doped KNbO3 polycrystalline
Wen CH, Chu SY, Wen CK |
| 484 - 488 |
Growth and spectral properties of Yb3+ : GdAl3(BO3)(4) single crystal
Liao JS, Lin YF, Chen YJ, Luo ZD, Huang YD |
| 489 - 492 |
Fabrication and electrochemical properties of alpha-Fe2O3 nanoparticles
Wang XO, Gao LS, Zheng HG, Ji MR, Shen T, Zhang Z |
| 493 - 498 |
Improvement of the quality of ZnO substrates by annealing
Ko HJ, Han MS, Park YS, Yu YS, Kim BI, Kim SS, Kim JH |
| 499 - 504 |
Structural and dielectrical properties of bismuth titanate nanoparticles prepared by metalorganic decomposition method
Liu WL, Xia HR, Han H, Wang XQ |
| 505 - 511 |
Growth of Bi2Sr2Ca1-xPrxCU2Oy single crystals by traveling solvent floating zone method
Yeh KW, Gan JY, Huang Y |
| 512 - 517 |
Growth and structure of SrAl0.5Ta0.5O3 : LaAlO3: CaAl0.5Ta0.5O3 solid solutions single crystals
Berkowski M, Aleksiyko R, Fink-Finowicki J, Diduszko R, Byszewski P, Kikalejshvili-Domukhovska R |
| 518 - 534 |
Application of elevated magnetic fields during growth of BiSrCaCuO superconducting whiskers and studies of growth defects for better understanding of the growth mechanism
Badica P, Togano K, Awaji S, Watanabe K, Iyo A, Kumakura H |
| 535 - 541 |
Orientation of tetragonal lysozyme crystals nucleated on fatty acid thin films
Kubo T, Uchiyama Y, Mizushima T, Hondoh H, Nakada T |
| 542 - 549 |
Unidirectional anisotropies in perylene crystal growth on a liquid surface
Liu XD, Kaiser V, Wuttig M, Michely T |
| 550 - 557 |
Study of liquid-liquid demixing from drug solution
Lafferrere L, Hoff C, Veesler S |
| 558 - 564 |
Structural and microhardness studies of a NLO material-bisthiourea cadmium chloride
Jeyakumari AP, Ramajothi J, Dhanuskodi S |
| 565 - 569 |
Growth and characterization of Bisthiourea-zinc Acetate, a new nonlinear optical material
Kannan V, Rajesh NP, Ganesh RB, Ramasamy P |
| 570 - 574 |
Phase-selective synthesis of cubic boron nitride in hydrothermal solutions
Yu MY, Li K, Lai ZF, Cui DL, Hao XP, Jiang MH, Wang QL |
| 575 - 579 |
Stabilizing NaCl particles with Cd2+ in a saturated solution during ex situ PSD measurement
Choi BS, Ring TA |
| 580 - 591 |
Confocal fluorescence spectrometry for observation of crystal dissolution kinetics
Fukura S, Tsunomori F, Iwai T, Shibata H, Kagi H |
| 592 - 598 |
Local control of the dendritic microstructure through perturbation
Lee K, Losert W |
| 599 - 605 |
Secondary phase inclusions in polycrystalline sheet silicon
Lu JG, Rozgonyi G, Rand J, Jonczyk R |
| 606 - 616 |
CeSi2-delta single crystals: growth features and properties
Souptel D, Behr G, Loser W, Teresiak A, Drotziger S, Pfleiderer C |
| 617 - 624 |
Modelling of growth effects of pressure changes in an edge-defined film-fed growth system
Braescu L, Balint AM, Balint S |
| 625 - 629 |
Oxygen determination from cell dimensions in YBCO superconductors
Benzi P, Bottizzo E, Rizzi N |
| 630 - 638 |
Stability of melt flow due to a traveling magnetic field in a closed ampoule
Grants I, Gerbeth G |
| 639 - 640 |
Comment on: Jun Dong and Peizhen Deng, "Ti : sapphire crystal used in ultrafast lasers and amplifiers", Journal of Crystal Growth, 261 (2004) 514-519
Khattak CP, Joyce DB |
| 641 - 642 |
Reply to comments on "Ti : sapphire crystal used in ultrafast lasers and amplifiers"
Dong J, Deng PZ |
