Journal of Crystal Growth

Journal of Crystal Growth, Vol.261, No.2-3 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (41 articles)

165 - 174	A new approach to performing equilibrium surface reaction calculations and its application to predicting growth of gallium nitride Mazumder S, Sengupta D
175 - 181	Computational analysis of GaN/InGaN deposition in MOCVD vertical rotating disk reactors Kadinski L, Merai V, Parekh A, Ramer J, Armour EA, Stall R, Gurary A, Galyukov A, Makarov Y
182 - 189	Deposition behavior of GaN in AIX 200/4 RF-S horizontal reactor Yakovlev EV, Talalaev RA, Makarov YN, Yavich BS, Wang WN
190 - 196	Modeling and experimental analysis of AlGaN MOVPE in commercial vertical high-speed rotating-disk reactors Mazaev KM, Lobanova AV, Yakovlev EV, Talalaev RA, Galyukov AO, Makarov YN, Gotthold D, Albert B, Kadinski L, Peres B
197 - 203	The impact of growth parameters on the formation of InAs quantum dots on GaAS(100) by MOCVD Cederberg JG, Kaatz FH, Biefeld RM
204 - 213	Nature of the parasitic chemistry during AlGaInNOMVPE Creighton JR, Wang GT, Breiland WG, Coltrin ME
214 - 224	Fundamental kinetics determining growth rate profiles of InP and GaAs in MOCVD with horizontal reactor Im IT, Oh HJ, Sugiyama M, Nakano Y, Shimogaki Y
225 - 230	Optimal spectral region for real-time monitoring of sub-ppm levels of water in phosphine by cavity ring-down spectroscopy Lehman SY, Bertness KA, Hodges JT
231 - 235	Performance of single use purifiers vs. regenerable purifiers for growth of high brightness gallium nitride LEDs Torres R, Watanabe T, Vininski J, Lawrence D, Yang ZH, Wang W, Garcia J, Yan CH
236 - 240	An accurate continuous level indication for precursor bubblers Kanjolia RK, Odedra R, Kingsley AJ, Coward KM, Travis S, Rushworth SA, Smith LM
241 - 248	Performance of sub-atmospheric pressure hydride gas source and delivery system for MOCVD Raynor MW, Houlding VH, Frye R, Griffing S, Clark A, Walterson B
249 - 252	Characterization of optical and electrical quality of Mg-doped InxGa1-xN grown by MOCVD Lee SN, Sakong T, Lee W, Paek H, Son J, Yoon E, Nam O, Park Y
253 - 258	MOVPE growth of Ga 3D structures for fabrication of GaN materials Sacilotti M, Imhoff L, Bourgeois S, Dumas C, Decobert J, Baldeck P, Colombier I
259 - 265	Effect of initial process conditions on the structural properties of AlN films Paduano QS, Weyburne DW, Jasinski J, Liliental-Weber Z
266 - 270	Organometallic vapor phase epitaxial growth of GaN on a 3c-SiC/Si(111) template formed by C+-ion implantation into Si(111) substrate Yamamoto A, Yamauchi T, Tanikawa T, Sasase M, Ghosh BK, Hashimoto A, Ito Y
271 - 274	Employment of a GaN buffer in the OMVPE growth of InN on sapphire substrates Yamamoto A, Imai N, Sugita K, Hashimoto A
275 - 279	Correlations between electrical and optical properties for OMVPE InN Yamamoto A, Sugita K, Takatsuka H, Hashimoto A, Davydov VY
280 - 288	Tungsten nitride thin films deposited by MOCVD: sources of carbon and effects on film structure and stoichiometry Bchir OJ, Green KM, Hlad MS, Anderson TJ, Brooks BC, McElwee-White L
289 - 293	In situ monitored MOVPE growth of undoped and p-doped GaSb(100) Kollonitsch Z, Moller K, Schimper HJ, Giesen C, Heuken M, Willig F, Hannappel T
294 - 300	In situ stress measurements during the MOCVD growth of AlN buffer layers on (111)Si substrates Raghavan S, Redwing JM
301 - 308	In situ strain control during MOCVD growth of high-quality InP-based long wavelength distributed Bragg reflectors Hoffman RW, Murphy M, Cruel J, Belousov M, Volf B, Murray C, Armour EA
309 - 315	Deposition and characterization of zirconium tin titanate thin films as a potential high-k material for electronic devices Mays EL, Hess DW, Rees WS
316 - 323	Metalorganic chemical vapor deposition and characterizations of epitaxial MgxZn1-xO (0 <= x <= 0.33) films on r-sapphire substrates Muthukumar S, Chen Y, Zhong J, Cosandey F, Lu Y, Siegrist T
324 - 329	Structure and properties of GaNxOy films grown by nitridation of GaAs(100) substrates de Lucas MCM, Fabreguette F, Linsavanh M, Imhoff L, Heintz O, Josse-Courty C, Mesnier MT, Potin V, Bourgeois S, Sacilotti M
330 - 335	Cluster formation and magnetic properties of Mn-incorporated (GaIn)As/InP layers grown by metal-organic vapor phase epitaxy Hara S, Lampalzer M, Torunski T, Volz K, Treutmann W, Stolz W
336 - 340	Simulation of GaN and InGaN p-i-n and n-i-n photo-devices Poochinda K, Chen TC, Stoebe TG, Ricker NL
341 - 348	High-efficiency metamorphic GaInP/GaInAs/Ge solar cells grown by MOVPE Fetzer CM, King RR, Colter PC, Edmondson KM, Law DC, Stavrides AP, Yoon H, Ermer JH, Romero MJ, Karam NH
349 - 354	New DFB grating structure using dopant-induced refractive index step Glew RW, Hinzer K, White JK, Goodchild D, Knight G, SpringThorpe AJ, Dixon-Warren SJ
355 - 358	MOCVD growth of high-performance InGaAsP/InGaP strain-compensated VCSELs with 850 nm emission wavelength Kuo HC, Chang YS, Lin CF, Lu TC, Wang SC
359 - 363	Characteristics of stable emission GaN-based resonant-cavity light-emitting diodes Lin CF, Yao HH, Lu JW, Hsieh YL, Kuo HC, Wang SC
364 - 371	Study of the incorporation factor (K) and its application to laser diode production Hansen DM, Goodnough TJ, Corbett PB, Zhang L, Forbes DV
372 - 378	Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices Wang CA, Shiau DA, Calawa DR
379 - 384	Organometallic vapor phase epitaxy of n-GaSb and n-GaInAsSb for low resistance ohmic contacts Wang CA, Shiau DA, Huang RK, Harris CT, Connors MK
385 - 392	Preparation of GaSb substrates for GaSb and GaInAsSb growth by organometallic vapor phase epitaxy Wang CA, Shiau DA, Lin A
393 - 397	Suppression of hydrogen passivation in carbon-doped GaAsSb grown by MOCVD Oda Y, Watanabe N, Uchida M, Sato M, Yokoyama H, Kobayashi T
398 - 403	OMVPE of GaAsSbN for long wavelength emission on GaAs Peake GM, Waldrip KE, Hargett TW, Modine NA, Serkland DK
404 - 410	Mask interference effect in a densely arrayed waveguide fabricated by using narrow-stripe selective MOVPE Sudo S, Mori K, Sasaki T
411 - 418	Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE Sugiyama M, Oh H, Nakano Y, Shimogaki Y
419 - 426	The effect of group V precursor on selective area MOVPE of InP/GaAs-related materials Oh H, Sagiyama M, Nakano Y, Shimogaki Y
427 - 432	The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor Forbes DV, Corbett PB, Hansen DM, Goodnough TJ, Zhang L, Myli K, Yeh JY, Mawst L
VII - VII	OMVPE-11 - Proceedings of the 11th Biennial (US) Workshop on Organometallic Vapor Phase Epitaxy - Held jointly with the 15th American Conference on Crystal Growth and Epitaxy and the 3rd International Symposium on Laser and NLO Materials - 20-24 July 2003 -Keystone, Colorado - Preface Caneau CG, Bhat R