| 253 - 258 |
Structure and growth rate of ZnTe films grown by isothermal closed space sublimation
de Melo O, Larramendi EM, Duart JMM, Velez MH, Stangl J, Sitter H |
| 259 - 267 |
High pressure-high temperature seeded growth of GaN on 1 in sapphire/GaN templates: Analysis of convective transport
Bockowski M, Strak P, Kempisty P, Grzegory I, Krukowski S, Lucznik B, Porowski S |
| 268 - 277 |
Czochralski growth of Ga1-3InxSb single crystals with uniform compositions
Tsaur SC, Kou S |
| 278 - 282 |
The influence of substrate temperature on ZnO thin films prepared by PLD technique
Zhao Y, Jiang YJ, Fang Y |
| 283 - 288 |
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique
Zappettini A, Zha M, Pavesi M, Zanotti L |
| 289 - 293 |
Effect of growth temperature of initial AIN buffer on the structural and optical properties of Al-rich AlGaN
Peng MZ, Guo LW, Zhang J, Yu NS, Zhu XL, Yan JF, Wang Y, Jia HQ, Chen H, Zhou JM |
| 294 - 297 |
The effects of mask openings on the selective liquid-phase epitaxial growth of GaAs microtips
Zhang HZ, Hu LZ, Tian YC, Sun XJ, Liang XP, Zhang HQ, Shi P |
| 298 - 301 |
The influence of free-carrier concentration on the PEC etching of GaN: A calibration with Raman spectroscopy
Lewandowska R, Weyher JL, Kelly JJ, Konczewicz L, Lucznik B |
| 302 - 308 |
Equilibrium analysis of zirconium carbide CVD growth
Won YS, Varanasi VG, Kryliouk O, Anderson TJ, McElwee-White L, Perez RJ |
| 309 - 314 |
Identification of subsurface damage in freestanding HVPE GaN substrates and its influence on epitaxial growth of GaN epilayers
Grandusky JR, Jindal V, Tripathi N, Shahedipour-Sandvik F, Lu H, Kaminsky EB, Melkote R |
| 315 - 320 |
Surfactant-induced enhanced room temperature ferromagnetism in Zn0.96Mn0.03Li0.01O nanoparticles: Prepared by solid-state pyrolitic reaction
Jayakumar OD, Gopalakrishnan IK, Kadam RM, Vinu A, Asthana A, Rao KV, Tyagi AK |
| 321 - 327 |
Chemical and structural characterization of barium hexaferrite films deposited on 6H-SiC with and without MgO/BaM interwoven layers
Cai ZH, Chen ZH, Goodrich TL, Harris VG, Ziemer KS |
| 328 - 333 |
Effect of the pH on the growth and properties of sol-gel derived boron-doped ZnO transparent conducting thin film
Houng B, Huang CL, Tsai SY |
| 334 - 340 |
Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
Pedersen H, Leone S, Henry A, Beyer FC, Darakchieva V, Janzen E |
| 341 - 347 |
In situ observations of crystal growth of spherical Si single crystals
Huang XN, Uda S, Tanabe H, Kitahara N, Arimune H, Hoshikawa K |
| 348 - 352 |
Fabrication and characterization of ZnO/TiOx nanoscale heterojunctions
Hsu YF, Djurisic AB, Tam KH, Cheung KY, Chan WK |
| 353 - 357 |
A novel aqueous solution method for K3Li2Nb5O15 film and powder
Cheng ZX, Wang XL, Ozawa K, Kimura H |
| 358 - 362 |
Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire
Lee SN, Paek HS, Son JK, Sakong T, Nam OH, Park Y |
| 363 - 366 |
InGaN/GaN quantum wells with low growth temperature GaN cap layers
Pendlebury ST, Parbrook PJ, Mowbray DJ, Wood DA, Lee KB |
| 367 - 371 |
Growth of La0.5Sr0.5CoO3 thin film on MgO-buffered Si substrate by pulsed laser deposition method: Evolution of crystalline orientation, morphology and growth mode with substrate temperature
Wu F, Li XM, Yu WD, Gao XD, Zhang X |
| 372 - 377 |
Growth and internal bias field Of L-lysine-doped triglycine sulfate (LLysTGS)
Kikuta T, Takagi A, Yamazaki T, Nakatani N |
| 378 - 385 |
Direct observation of spherulitic growth stages of CaCO3 in a poly(acrylic acid)-chitosan system: In situ SPM study
Ulcinas A, Butler MF, Heppenstall-Butler M, Singleton S, Miles MJ |
| 386 - 394 |
Shape-controlled synthesis of CeOHCO3 and CeO2 microstructures
Wang SF, Gu F, Li CZ, Cao HM |
| 395 - 404 |
Biomimetic synthesis of calcite films by a polymer-induced liquid-precursor (PILP) process 1. Influence and incorporation of magnesium
Cheng XG, Varona PL, Olszta MJ, Gower LB |
| 405 - 409 |
Growth and characterization of nonlinear optical crystal Lu0.66La0.95SC2.39(BO3)(4)
Li W, Huang LX, Zhang G, Ye N |
| 410 - 420 |
Oxygen as impurity in crystal growth of intermetallics
Souptel D, Loser W, Gruner W, Behr G |
| 421 - 426 |
Defect structure and photorefractive properties of In : Eu : Fe : LiNbO3 Crystals with various Li/Nb ratios
Sun L, Guo F, Lv Q, Li H, Cai W, Xu Y, Zhao L |
| 427 - 431 |
Growth and optical properties of YBa3B9O18 : Ce crystals
He M, Wang WY, Sun YP, Xu YP, Chen XL |
| 432 - 439 |
Effect of an external electric field on the crystal growth process of YBCO superconductive oxide
Huang X, Uda S, Koh S |
| 440 - 447 |
Using density functional theory to postulate a mechanism for zinc sulfide formation in a CVD reactor
Sharifi Y, Achenie LE |
| 448 - 456 |
Rapid solidification of Al2O3/Y3Al5O12/ZrO2 eutectic in situ composites by laser zone remelting
Su HJ, Zhang J, Cui CJ, Liu L, Fu HZ |
| 457 - 465 |
Epitaxial growth of cobalt oxide by atomic layer deposition
Klepper KB, Nilsen O, Fjellvag H |
| 466 - 471 |
Si multicrystals grown by the Czochralski method with multi-seeds
Hoshikawa T, Taishi T, Huang X, Uda S, Yamatani M, Shirasawa K, Hoshikawa K |
| 472 - 476 |
Controllable growth of electrodeposited single-crystal nanowire arrays: The examples of metal Ni and semiconductor ZnS
Sun HY, Yu YL, Li XH, Li W, Li F, Liu BT, Zhang XY |
| 477 - 482 |
Glass transition and crystallization kinetics of CsLiB6O10 glasses by differential scanning calorimetry
Vaish R, Varma KBR |
| 483 - 489 |
Synthesis and magnetic properties of single-crystalline magnetite nanowires
Han Q, Liu ZH, Xu YY, Zhang H |
| 490 - 499 |
Delayed feedback control of rapid directional solidification
Savina TV, Nepomnyashchy AA, Golovin AA |
| 500 - 501 |
Comments on "Growth and characterization of single-crystal Er3+ : KPb2Cl5 as a mid-infrared laser material"
Velazquez M, Perez O |
| 502 - 502 |
Response to comments on: "Growth and characterization of single-crystal Er3+ : KPb2Cl5 as a mid-infrared laser material"
Condon NJ, O'Connor S, Bowman SR |
