165 - 165 |
CGCT-III - The Third Asian Conference on Crystal Growth and Crystal Technology - 16-19 October 2005 - Beijing, China - Preface Jiang MH, Ogawa T |
169 - 178 |
Development of new NLO crystals for UV and IR applications Chen CT, Bai L, Wang ZZ, Li RK |
179 - 187 |
Improving optical transparency in CdGeAs2 crystals by controlling crystalline defects Feigelson RS |
188 - 191 |
Crystal growth of micropipe free 4H-SiC on 4H-SiC{0 3 (3)over-bar 8} seed and high-purity semi-insulating 6H-SiC Shiomi H, Kinoshita H, Furusho T, Hayashi T, Tajima M, Higashi E |
192 - 196 |
Stacking faults in SiC crystal grown by spontaneous nucleation sublimation method Hu XB, Xu XG, Li XX, Jiang SZ, Li J, Wang L, Wang JY, Jiang MH |
197 - 200 |
Growth of silicon carbide bulk crystals by physical vapor transport method and modeling efforts in the process optimization Chen QS, Lu J, Zhang ZB, Wei GD, Prasad V |
201 - 205 |
Morphologies of GaN single crystals grown from Ga solutions under flowing ammonia Sun G, Meissner E, Hussy S, Birkmann B, Friedrich J, Muller G |
206 - 211 |
Optical characteristics of GaN single crystals grown by the HVPE: Effects of thermal annealing and N-2 plasma treatment Ryu JH, Oh DK, Yoon ST, Choi BG, Yoon JW, Shim KB |
212 - 215 |
Study of structures and magnetic properties of single crystalline HVPE-GaMnN films Xiu XQ, Zhang R, Li BB, Xie ZL, Chen L, Liu B, Han P, Gu SL, Shi Y, Zheng YD |
216 - 220 |
Bulk GaN single crystal growth and characterization using various alkali metal flux Shin TI, Lee HJ, Lee JH, Kim SW, Suh SJ, Yoon DH |
221 - 226 |
Role of excited nitrogen species in the growth of GaN by RF-MBE Kikuchi T, Somintac AS, Ariyada O, Wada M, Ohachi T |
227 - 229 |
Growth of ZnO photonic crystals by self-assembly Xie J, Deng H, Xu ZQ, Li Y, Huang J |
230 - 235 |
Advances in growth of fiber crystal by the LHPG technique. Application to the optimization of Yb3+ -doped CaF2 laser crystals Boulon G, Ito M, Goutaudier C, Guyot Y |
236 - 238 |
Study on crystal growth and scintillating properties of Bi-doped Lu3Ga5O12 Novoselov A, Yoshikawa A, Nikl M, Pejchal J, Fukuda T |
239 - 242 |
Scintillation characteristics of pr-doped Lu3Al5O12 single crystals Ogino H, Yoshikawa A, Nikl M, Kamada K, Fukuda T |
243 - 247 |
Crystal growth and optical properties of rare-earth doped LiNbO3 single crystal fiber by the mu-PD method Lee HJ, Shur JW, Yoon DH |
248 - 251 |
The edge-defined film-fed growth of rare-earth vanadate single crystals Kochurikhin VV, Klassen AV, Kvyat EV, Ivanov MA |
252 - 256 |
Large modification of crystal-melt interface shape during Si crystal growth by using electromagnetic Czochralski method (EMCZ) Watanabe M, Vizman D, Friedrich J, Muller G |
257 - 259 |
Crystal growth and oxygen precipitation behavior of 300 mm nitrogen-doped Czochralski silicon Tian D, Yang DR, Ma XY, Li LB, Que DL |
260 - 265 |
The effects of several growth parameters on the formation behavior of point defects in Czochralski-grown silicon crystals Cho HJ, Lee BY, Lee JY |
266 - 271 |
Micro-defects in Ge doped Czochralski grown Si crystals Yang DR, Chen JH, Li H, Ma XY, Tian D, Li LB, Que DL |
272 - 281 |
The effect of crystal rotation direction on the thermal and velocity fields of a Czochralski system with a low Prandtl number melt Son SS, Nam PO, Yi KW |
282 - 285 |
Directional growth method to obtain high quality polycrystalline silicon from its melt Fujiwara K, Pan W, Sawada K, Tokairin M, Usami N, Nose Y, Nomura A, Shishido T, Nakajima K |
286 - 289 |
Investigation of polycrystallization mechanism at initial interfaces in InxGa1-xAs bulk crystals on lattice mismatched seeds Miyata H, Adachi S, Ogata Y, Tsuru T, Muramatsu Y, Kinoshita K, Odawara O, Yoda S |
290 - 293 |
Solution growth of n-type beta-FeSi2 single crystals using Ni-doped Zn solvent Udono H, Aoki Y, Suzuki H, Kikuma I |
294 - 297 |
Synthesis of GaN nanorods through ammoniating Ga2O3/BN thin films deposited by RF magnetron sputtering Wu YX, Xue CS, Zhuang HZ, Tian DH, Liu YA, He JT, Sun LL, Wang FX, Ai YJ, Cao YP |
298 - 301 |
Fabrication of actinomorphic GaN nanowires by sputtering and ammoniating progress Tian DH, Xue CS, Zhuang HZ, Zhang XK, Wu YX, He JT, Liu Y, Wang FX |
302 - 305 |
The morphology of an epitaxial Mg-Al spinel layer on a sapphire surface Liu CM, Chen JC, Chen CJ |
306 - 310 |
Growth of ZnO nanostructures in a chemical vapor deposition process Kim SW, Fujita S, Park HK, Yang B, Kim HK, Yoon DH |
311 - 314 |
CdSe self-assembled quantum dots grown on ZnMnSe diluted magnetic semiconductors with different Mn concentration Lee S, Dobrowolska M, Furdyna JK |
315 - 319 |
Growth of ferroelectric BLT and Pt nanotubes for semiconductor memories Seo BI, Shaislamov UA, Lee SJ, Kim SW, Kim IS, Hong SK, Yang B |
320 - 323 |
Fabrication of SiO2/TiO2 andSiO(2)/Al2O3 composite inverse opals Zhou Q, Dong P, Cheng BY |
324 - 327 |
Domain patterning in LiNbO3 and LiTaO3 by focused electron beam Li X, Terabe K, Hatano H, Kitamura K |
328 - 331 |
Sub-micrometer domain engineering on periodically poled lithium niobate Peng LH, Chen YH, Lin CD, Lin LF, Kung AH |
332 - 336 |
Growth of 4-in diameter MgO-doped near-stoichiometric lithium tantalate single crystals and fabrication of periodically poled structures Kumaragurubaran S, Takekawa S, Nakamura M, Kitamura K |
337 - 340 |
Laser performance of Nd : YAG at 946 nm and frequency doubling with periodically poled LiTaO3 He JL, Wang HM, Pan SD, Liu J, Li HX, Zhu SN |
341 - 344 |
Dipole mode photonic crystal point defect laser on InGaAsP/InP Zheng WH, Ren G, Ma XT, Cai XH, Chen LH, Nozaki K, Baba T |
345 - 346 |
Locally resonant gaps of photonic crystals constituted by metamaterials Jiang H, Guan G, Li H, Zhang Y, Chen H |
347 - 350 |
Structural tailoring of multilayer porous silicon for photonic crystal application Qian M, Bao XQ, Wang LW, Lu X, Shao J, Chen XS |
351 - 354 |
Growth of large-diameter nearly stoichiometric lithium niobate crystals by continuous melt supplying system Sun J, Kong YF, Zhang L, Yan WB, Wang XZ, Xu JJ, Zhang GY |
355 - 357 |
Growth and characterization of Mn-doped stoichiometric lithium niobate single crystals Ravi G, Kitamura K, Mohankumar R, Takekawa S, Nakamura M, Liu Y |
358 - 363 |
Some aspects of lithium-boron melts structuring Tsvetkov EG, Pylneva NA, Davydov AV |
364 - 367 |
Growth of KTP crystals with high damage threshold by hydrothermal method Zhang CL, Huang LX, Zhou WN, Zhang G, Hou HD, Ruan QF, Lei W, Qin SJ, Lu FH, Zuo YB, Shen HY, Wang GF |
368 - 372 |
Crystal growth and characterization of KY(WO4)(2) and KGd(WO4)(2) for laser applications Kumaran AS, Babu SM, Ganesamoorthy S, Bhaumik I, Karnal AK |
373 - 376 |
Growth and structure of monoclinic KLu(WO4)(2) crystals Zhang JX, Wang JY, Wang KP, Yu WT, Zhang HJ, Wang ZP, Wang XP, Ba MF |
377 - 380 |
Growth, properties and Raman shift laser in tungstate crystals Wang JY, Zhang HJ, Wang ZP, Ge WW, Zhang JX, Jiang MH |
381 - 385 |
Czochralski growth of YAP crystal doped with high Tm concentration Lu YL, Wang J, Yang Y, Dai YB, Sun BD, Li SH |
386 - 390 |
Study on crystal growth of large size Nd3+: Gd3Ga5O12 (Nd3+: GGG) by Czochralski method Jia Z, Tao X, Dong C, Cheng X, Zhang W, Xu F, Jiang M |
391 - 394 |
Bridgman growth and characterization of calcium fluoride crystals Xu JY, Shi ML, Lu BL, Li XH, Wu AH |
395 - 398 |
Direct observation of ferroelectric domains and phases in (001)-cut Pb(Mg1/3Nb2/3)(1-x)TixO3 single crystals under electric-field poling Chien RR, Schmidt VH, Tu CS, Wang FT |
399 - 403 |
Growth, structural phase transition and ferroelectric properties of Pb[(Zn1/3Nb2/3)(0.91) Ti-0.09]O-3 single crystals Babu JB, Madeswaran G, Prakash C, Dhanasekaran R |
404 - 407 |
Growth habits and characterization of Sr3NbGa3Si2O14 crystal Chen JJ, Shi EW, Zheng YQ, Kong HK, Chen H |
408 - 411 |
Growth and characterization of La3Ga5.5Nb0.5O14 crystal Kong HK, Wang JY, Zhang HJ, Yin X |
412 - 415 |
Bulk near-stoichiometric lithium niobate crystal growth by a melt supply method Chen H, Zheng Y, Chen J, Kong H, Lu Z, Shi E |
416 - 421 |
Development of novel scintillator crystals Nikl M, Yoshikawa A, Vedda A, Fukuda T |
422 - 428 |
Sodium cobaltates: Crystal growth, structure, thermoelectricity, and superconductivity Lin CT, Chen DP, Maljuk A, Lemmens P |
429 - 432 |
Direct bonding of two crystal substrates at room temperature by Ar-beam surface activation Takagi H, Maeda R |
433 - 436 |
Cooling-rate screening system for determining protein crystal growth conditions Murai R, Nakata S, Kashii M, Adachl H, Niino A, Takano K, Matsumura H, Murakami S, Inoue T, Mori Y, Sasaki T |
437 - 440 |
Effect of ultrasonic irradiation on protein crystallization Kakinouchi K, Adachi H, Matsumura H, Inoue T, Murakami S, Mori Y, Koga Y, Takano K, Kanaya S |
441 - 444 |
Growth of high-quality DAST crystals for THz applications Brahadeeswaran S, Onduka S, Takagi M, Takahashi Y, Adachi H, Yoshimura M, Mori Y, Sasaki T |
445 - 448 |
Unidirectional crystallization of large diameter benzophenone single crystal from solution at ambient temperature Sankaranarayanan K, Ramasamy P |
449 - 453 |
Growth and characterization of a new nonlinear optical crystal Ca-5(BO3)(3)F Chen GJ, Wu YC, Fu PZ |
454 - 457 |
Growth of La2CaB10O19 single crystals by top-seeded solution growth technique Jing FL, Wu Y, Fu PZ |
458 - 463 |
Studies on new NLO crystals in CdO-ZnO-B2O3 system Yuan X, Shen DZ, Wang XQ, Shen GQ |
464 - 467 |
Growth of nonlinear optical crystal Y0.57La0.72Sc2.71(BO3)(4) Ye N, Zhang Y, Chen W, Keszler DA, Aka G |
468 - 471 |
Flux growth and optical properties of Na3La9O3(BO3)(8) crystals Li YG, Wu YC, Zhang GC, Fu PZ, Bai XY |
472 - 475 |
Effect of dislocations on the optical homogeneity and UV absorption of KABO crystals Liu LJ, Chen CT |
476 - 479 |
New growth technique of potassium niobate crystal with peritectic system from molten zone in stoichiometric composition Kimura H, Maiwa K, Miyazaki A, Kannan CV, Cheng ZX |
480 - 484 |
Solidification and thermophysical property studies of barium titanate using electrostatic levitation furnace Yu JD, Ishikawa T, Paradis PF |
485 - 489 |
Effect of trivalent ions (La3+, Nd3+) on the properties of Bi4Ti3O12 single crystals Kannan CV, Cheng ZX, Kimura H, Shimamura K, Miyazaki A, Kitamura K |
490 - 493 |
Growth of AgGaS2 single crystals by modified furnace Chen BJ, Zhu SF, Zhao BJ, Zhang JJ, Huang Y, Li M, Liu J, Tan B, Wang RL, He ZY |
494 - 499 |
Structural and optical properties of noncentrosymmetric quaternary crystal AgCd2GaS4 Atuchin VV, Pankevich VZ, Parasyuk OV, Pervukhina NV, Pokrovsky LD, Remesnik VG, Uvarov VN, Pekhnyo VI |
500 - 504 |
Potentials of LiGa(S1-xSex)(2) mixed crystals for optical frequency conversion Huang JJ, Atuchin VV, Andreev YM, Lanskii GV, Pervukhina NV |
505 - 509 |
Improved growth technology of large MgO single crystals Zhang X, Xue DF, Wang JY, Feng XQ |
510 - 514 |
Effect of sodium toluene sulfonate on the nucleation, growth and characterization of DAST single crystals Hameed ASH, Yu WC, Tai CY, Lan CW |
515 - 518 |
Dynamic simulation of temperature and iron distributions in a casting process for crystalline silicon solar cells with a global model Liu LJ, Nakano S, Kakimoto K |
519 - 522 |
Numerical simulation of the flow field and concentration distribution in the bulk growth of silicon carbide crystals Lu J, Zhang ZB, Chen QS |
523 - 527 |
Studies of interaction of convective flow with free dendritic growth Xu JJ |
528 - 531 |
Investigations on the nucleation kinetics of tris thiourea zinc cadmium sulphate Jayalakshmi D, Kumar J |
532 - 537 |
Growth and characterization of GaAs crystals produced by the VCz method without boric oxide encapsulation Rudolph P, Kiessling FM |
538 - 541 |
Characterization of VGFB-grown ZnTe single crystals by means of synchrotron X-ray topo-tomographic technique Mizuno K, Kobayashi T, Morikawa K, Okamoto H, Asahi T |
542 - 545 |
Study on Czochralski growth and defects of LiAlO2 single crystals Chou MMC, Tsao PC, Huang HC |
546 - 549 |
Different behaviors of F+ centers due to electron beam irradiations between synthetic sapphire and Be-diffusion-treated natural sapphire Lee BH, Teraji T, Ito T |