415 - 418 |
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures Wang CM, Wang XL, Hu GX, Wang JX, Xiao HL, Li JP |
419 - 422 |
MOCVD growth and electrical studies of p-type AlGaN with Al fraction 0.35 Yu HB, Ulker E, Ozbay E |
423 - 427 |
Silicon nanowires grown from silicon monoxide under hydrothermal conditions Pei LZ, Tang YH, Chen YW, Guo C, Zhang W, Zhang Y |
428 - 432 |
Formation of polymers in TMGa/NH3/H-2 system under GaN growth Hirako A, Ohkawa K |
433 - 439 |
Improved optical response for N-doped anatase TiO2 films prepared by pulsed laser deposition in N-2/NH3/O-2 mixture Xu P, Mi L, Wang PN |
440 - 444 |
The growth and characterization of ZnSe nanoneedles by a simple chemical vapor deposition method Fu HZ, Li HY, Jie WQ, Yang L |
445 - 449 |
Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers Napierala J, Martin D, Grandjean N, Ilegems M |
450 - 457 |
Forced convection induced thermal fluctuations at the solid-liquid interface and its effect on the radial alloy distribution in vertical Bridgman grown Ga1-xInxSb bulk crystals Kim HJ, Chandola A, Bhat R, Dutta PS |
458 - 463 |
Asymmetric distributions of grown-in microdefects in Czochralski silicon Cho HJ, Sim BC, Lee JY |
464 - 471 |
Microstructure dependence of ZnO : Al films on the deposition conditions and the surface morphology of silicon substrate Jiang X, Jia CL, Hong RJ |
472 - 476 |
Growth of low-density GaN quantum dots on AlxGa1-xN Pakula K, Bozek R, Surowiecka K, Stepniewski R, Wysmolek A, Baranowski JM |
477 - 484 |
Growth of InAs quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition and their optical properties Liang S, Zhu HL, Pan JQ, Ye XL, Wang W |
485 - 488 |
Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy Schulze F, Dadgar A, Blasing J, Hempel T, Diez A, Christen J, Krost A |
489 - 493 |
Investigation of Si/SiGe/Si on bonded silicon-on-insulator by triple-axis X-ray diffraction and synchrotron radiation double-crystal topography Ma TD, Tu HL, Hu GY, Shao BL, Liu AS |
494 - 501 |
Computational modeling of heat transport in a multi-zone high-pressure vertical electro-dynamic gradient CdZnTe furnace Reed MD, Szeles C, Cameron SE |
502 - 505 |
MBE growth and structural and magnetic properties of (In1-gamma Al gamma)(1-x)MnxAs-diluted magnetic semiconductors Lee WN, Chen YF, Huang JH, Guo XJ, Kuo CT, Ku HC |
506 - 514 |
Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 Oliver RA, Kappers MJ, Sumner J, Datta R, Humphreys CJ |
515 - 519 |
Nanostructure formation of double-clad Cr4+: YAG crystal fiber grown by co-drawing laser-heated pedestal Lin YS, Lai CC, Huang KY, Chen JC, Lo CY, Huang SL, Chang TY, Ji JY, Shen PY |
520 - 526 |
Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC Sakwe SA, Muller R, Wellmann PJ |
527 - 533 |
Fabrication and X-ray characterization of biaxially textured thick film EuBa2Cu3O7-delta homo-substrates Wang SQ, Zhang JZ, Markiewicz RS, Giessen BC |
534 - 539 |
Oxygen radical irradiation effect in reactive magnetron sputtering for orientation selective epitaxial growth of CeO2(100) layers on Si(100) substrates Inoue T, Shida S, Kato K |
540 - 546 |
Integration of artificial SrTiO3/BaTiO3 superlattices on Si substrates using a TiN buffer layer by pulsed laser deposition method Kim TU, Kim BR, Lee WJ, Moon JH, Lee BT, Kim JH |
547 - 551 |
Piezomodulated reflectance study of self-assembled InAs quantum dots-in-a-well Wang C, Chen PP, Tang NY, Li TX, Xia CS, Lu W, Wang FZ, Chen ZH |
552 - 558 |
Vapor pressure scanning of non-stoichiometry in Cd0.9Zn0.1Te1 +/-delta and Cd0.85Zn0.15Te1 +/-delta Greenberg JH, Guskov VN |
559 - 563 |
White organic electroluminescent devices Tsou CC, Lu HT, Yokoyama M |
564 - 567 |
Effect of post-annealing in oxygen atmosphere on the photoluminescence properties of nc-Si rich SiO2 films Bi L, He Y, Feng JY |
568 - 573 |
Transformation mechanism of Te particles into Te nanotubes and nanowires during solvothermal process Zhang H, Yang DR, Ma XY, Que DL |
574 - 577 |
Epitaxial growth of AIN on Cu(111) substrates using pulsed laser deposition Inoue S, Okamoto K, Matsuki N, Kim TW, Fujioka H |
578 - 586 |
Thermodynamic and kinetic aspects of decomposition of MgB2 in vacuum: Implications for optimization of synthesis conditions Brutti S, Balducci G, Gigli G, Cicciola A, Manfrinetti P, Palenzona A |
587 - 595 |
Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy Corrion A, Wu F, Mates T, Gallinat CS, Poblenz C, Speck JS |
596 - 604 |
Three-dimensional heat transfer and fluid exchange through single-hole baffles in industry hydrothermal autoclaves Li HM, Braun MJ |
605 - 608 |
Flux growth of high-quality CoFe2O4 single crystals and their characterization Wang WH, Ren X |
609 - 616 |
Influence of synthesis parameters on vanadium-silicalite-1 crystal growth prepared with fluoride-containing media Tavolaro A, Tavolaro P, Drioli E |
617 - 620 |
A novel seed-isolation technique during the processing of solutions Karnal AK, Saxena A, Bhat HL, Wadhawan VK, Nathan TPS |
621 - 625 |
Sonochemical synthesis of PbS nanocubes, nanorods and nanotubes Wang SF, Gu F, Lu MK, Zhou GJ, Zhang AY |
626 - 629 |
Single crystal growth of MgB2 by evaporating Mg-flux method Du W, Xu HZ, Zhang HB, Xu D, Wang XQ, Hou XQ, Wu YZ, Jiang FY, Qin LJ |
630 - 638 |
Effect of supersaturation on evolution of crystal faces - theoretical analysis Prywer J |
639 - 646 |
2,4,6-trinitrophenol (TNP): An organic material for nonlinear optical (NLO) applications Srinivasan P, Gunasekaran M, Kanagasekaran T, Gopalakrishnan R, Ramasamy P |
647 - 651 |
Preparation of crystalline CaWO4 thin films by chemical bath deposition Zhai R, Wang H, Yan H, Yoshimura M |
652 - 658 |
Numerical investigation of heat-mass transfer processes in hydrothermal growth system Popov VN, Tsivinskaya YS, Bekker TB, Kokh KA, Kokh AE |
659 - 662 |
Thermal stress analysis of lead molybdate single crystal during growth process: Discussion on relation between thermal stress and crystal quality Miyazaki N, Matsuura Y, Imahase D |
663 - 669 |
Synthesis and characterization of ZnO nanostructures by two-step oxidation of Zn nano- and microparticles Gui YH, Xie CS, Zhang QY, Hu ML, Yu J, Weng Z |
670 - 675 |
Growth and branching of CuO nanowires by thermal oxidation of copper Kaur M, Muthe KP, Despande SK, Choudhury S, Singh JB, Verma N, Gupta SK, Yakhmi JV |
676 - 680 |
Cooperative and charge transfer luminescence in Yb3+ -doped yttrium aluminum perovskite (YAlO3) Dong YJ, Zhou GQ, Xu J, Zhao GJ, Su FL, Su LB, Zhang GB, Zhang DH, Li HJ, Si JL |
681 - 685 |
A fusion-crystalization mechanism for nucleation of misfit dislocations in FCC epitaxial films Zhou NG, Zhou L |
686 - 689 |
Growth of In2O3 single-crystalline film on sapphire (0001) substrate by molecular beam epitaxy Mei ZX, Wang Y, Du XL, Zeng ZQ, Ying MJ, Zheng H, Jia JF, Xue QK, Zhang Z |
690 - 702 |
The oriented growth of zirconia thin films on NaCl (001) surface Yeh SW, Huang HL, Gan DS, Shen PY |
703 - 707 |
Study of thermally stimulated luminescence from different phases of lithium borate and its application in crystal characterization Sabharwal SSC |
708 - 714 |
Reactor design optimization based on 3D modeling of nitrides deposition in MOCVD vertical rotating disc reactors Mitrovic B, Parekh A, Ramer J, Merai V, Armour EA, Kadinski L, Gurary A |
715 - 726 |
Asymptotic solutions for an axisymmetric, stagnant film model of directional solidification Clemons CB, Golovaty D, Young GW |
727 - 733 |
Synchrotron radiation X-ray diffraction study of the particle formation of pseudo-polymorphic calcium oxalate Haselhuhn F, Doyle S, Kind M |
734 - 736 |
Growth behavior and surface feature of quasi-one-dimensional anisotropic antiferromagnet BaCo2V2O8 crystal He ZZ, Taniyama T, Itoh M |