Journal of Crystal Growth

Journal of Crystal Growth, Vol.312, No.14 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (25 articles)

2033 - 2037	Optimization of a-plane (1 1 (2)over-bar 0) InN grown via MOVPE on a-plane GaN buffer layers on r-plane (1 (1)over-bar 0 2) sapphire Laskar MR, Kadir A, Rahman AA, Shah AP, Hatui N, Gokhale MR, Bhattacharya A
2038 - 2043	Subtle interplay between polytypism and preferred growth direction alignment in GaN nanorods non-catalytically grown on Si(111) substrates by using hydride vapor phase epitaxy Lee S, Oh T, Shin B, Kim C, Lee DR, Lee HH
2044 - 2048	The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate Cao JX, Li ST, Fan GH, Zhang Y, Zheng SW, Yin YA, Huang JY, Su J
2049 - 2055	Tip-growth mode and base-growth mode of Au-catalyzed zinc oxide nanowires using chemical vapor deposition technique Pung SY, Choy KL, Hou XH
2056 - 2059	Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy Konaka Y, Ono K, Terai Y, Fujiwara Y
2060 - 2064	Facile synthesis and assembly of CuS nano-flakes to novel hexagonal prism structures Wang SK, Ning JJ, Zhao LY, Liu BB, Zou B
2065 - 2068	Growth of height-controlled InGaN quantum dots on GaN Park IK, Park SJ, Choi CJ
2069 - 2072	Enlarged ferromagnetic hysteresis in InMnP:Be epilayers formed by thermal diffusion using MBE-grown Mn/InP:Be bilayers Shon Y, Lee S, Kang TW, Lee Y, Lee SW, Song JD, Kim HJ, Lee JJ, Yoon IT
2073 - 2077	Effect of arsenic species on the kinetics of GaAs nanowires growth by molecular beam epitaxy Sartel C, Dheeraj DL, Jabeen F, Harmand JC
2078 - 2082	Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers Lautenschlaeger S, Eisermann S, Hofmann MN, Roemer U, Pinnisch M, Laufer A, Meyer BK, von Wenckstern H, Lajn A, Schmidt F, Grundmann M, Blaesing J, Krost A
2083 - 2088	Temperature effects during the growth of InxGa1-xN films through the whole compositional range by plasma-assisted molecular beam epitaxy Hall JL, Kent AJ, Foxon CT, Campion RP
2089 - 2092	Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy Buehl TE, LeBeau JM, Stemmer S, Scarpulla MA, Palmstrom CJ, Gossard AC
2093 - 2097	Local structural, magnetic, and optical properties of Zn1-xFexO thin films Seo SY, Kwak CH, Kim SH, Kim BH, Park CI, Park SH, Han SW
2098 - 2102	Study of effects of polishing and etching processes on Cd1-xZnxTe surface quality Bensouici A, Carcelen V, Plaza JL, De Dios S, Vijayan N, Crocco J, Bensalah H, Dieguez E, Elaatmani M
2103 - 2106	Crystal growth and spectroscopic properties of erbium doped Lu2SiO5 Ding YC, Zhao GJ, Xu XD
2107 - 2112	Dipeptide-assisted growth of uniform gallium oxohydroxide spindles Lee I, Kwak J, Haam S, Lee SY
2113 - 2116	In situ time-resolved X-ray diffraction study of octacalcium phosphate transformations under physiological conditions Rau JV, Komlev VS, Generosi A, Fosca M, Albertini VR, Barinov SM
2117 - 2121	Crystal growth and spectroscopic properties of Yb:CaYAlO4 single crystal Li DZ, Xu XD, Cheng Y, Cheng SS, Zhou DH, Wu F, Xia CT, Xu J, Zhang JA
2122 - 2127	Selection criterion for the growing dendritic tip in a non-isothermal binary system under forced convective flow Alexandrov DV, Galenko PK, Herlach DM
2128 - 2132	Strain variation in p-GaN by different spacer layers in the light emitting diodes and their microstructural and emission behaviors Kong BH, Cho HK, Kim MY, Choi RJ, Kim BK
2133 - 2136	A simple method to synthesize alpha-Si3N4, beta-SiC and SiO2 nanowires by carbothermal route Wang QS, Cong RD, Li M, Zhang JA, Cui QL
2137 - 2144	Investigation of the final stages of solidification and eutectic phase formation in Re and Ru containing nickel-base superalloys Heckl A, Rettig R, Cenanovic S, Goken M, Singer RF
2145 - 2149	Fabrication of nano-crystalline silicon thin film at low temperature by using a neutral beam deposition method Kang SK, Jeon MH, Park JY, Lee HC, Park BJ, Yeon JK, Yeom GY
2150 - 2153	Fabrication of a freestanding GaN layer by direct growth on a ZnO template using hydride vapor phase epitaxy Kim SY, Lee HJ, Park SH, Lee W, Jung MN, Fujii K, Goto T, Sekiguchi T, Chang JH, Kil G, Yao T
2154 - 2170	An experimental investigation of the columnar-to-equiaxed grain transition in aluminum-copper hypoeutectic and eutectic alloys Ares AE, Gueijman SF, Schvezov CE