3549 - 3552 |
High-quality Cu2O crystals with various morphologies grown by thermal oxidation Mani S, Jang JI, Ketterson JB, Park HY |
3553 - 3556 |
Effects of real-time monitored growth interrupt on crystalline quality of AlN epilayer grown on sapphire by molecular beam epitaxy Fu QM, Peng T, Liu C |
3557 - 3562 |
Study of the influence of the rare-earth elements on the properties of lead iodide Matuchova M, Zdansky K, Zavadil J, Danilewsky A, Riesz F, Hassan MAS, Alexiew D, Kral R |
3563 - 3567 |
Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications Lackner D, Pitts OJ, Najmi S, Sandhu P, Kavanagh KL, Yang A, Steger M, Thewalt MLW, Wang Y, McComb DW, Bolognesi CR, Watkins SP |
3568 - 3572 |
Improvement in crystallinity and optical properties of ZnO epitaxial layers by thermal annealed ZnO buffer layers with oxygen plasma Kim MS, Kim TH, Kim DY, Kim GS, Choi HY, Cho MY, Jeon SM, Kim JS, Kim JS, Lee DY, Son JS, Lee JI, Kim JH, Kim E, Hwang DW, Leem JY |
3573 - 3576 |
Misoriented domain formation in 6H-SiC single crystal Chen BY, Liu X, Chen ZZ, Chang SH, Xiao B, Shi EW |
3577 - 3580 |
A facile route to arsenic-doped p-type ZnO films Wang SP, Shan CX, Li BH, Zhang JY, Yao B, Shen DZ, Fan XW |
3581 - 3586 |
Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application Tsukada D, Matsumoto Y, Sasaki R, Takeishi M, Saito T, Usami N, Suemasu T |
3587 - 3591 |
Computational study on transamination of alkylamides with NH3 during metalorganic chemical vapor deposition of tantalum nitride Won YS, Park SS, Kim YS, Anderson TJ, McElwee-White L |
3592 - 3597 |
Vacancy behavior in Czochralski silicon growth Lee SH, Kang JW, Hong YH, Oh HJ, Kim DH |
3598 - 3608 |
Thermodynamics of GaAs nanowire MBE growth with gold droplets Chatillon C, Hodaj F, Pisch A |
3609 - 3612 |
Growth of high-quality ZnO single crystals by seeded CVT using the newly designed ampoule Hong SH, Mikami M, Mimura K, Uchikoshi M, Yasuo A, Abe S, Masumoto K, Isshiki M |
3613 - 3617 |
Interface-induced microstrain in La0.67Ca0.33MnO3/YBa2Cu3O7 superlattices Kuru Y, Aydogdu GH, Cristiani G, Habermeier HU |
3618 - 3621 |
Structural and optical properties of single-crystal ZnMgO thin films grown on sapphire and ZnO substrates by RF magnetron sputtering Kim IS, Lee BT |
3622 - 3625 |
Improvements in a-plane GaN crystal quality by AlN/AlGaN superlattices layers Xu SR, Hao Y, Zhang JC, Zhou XW, Yang LA, Zhang JF, Duan HT, Li ZM, Wei M, Hu SG, Cao YR, Zhu QW, Xu ZH, Gu WP |
3626 - 3630 |
Morphotropic phase boundary, segregation effect and crystal growth in the NBT-KBT system Xie HD, Jin L, Shen DZ, Wang XQ, Shen GQ |
3631 - 3635 |
Size-controlled synthesis of LaAlO3 by reverse micelle method: Investigation of the effect of water-to-surfactant ratio on the particle size Chandradass J, Kim KH |
3636 - 3639 |
Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony Mitsuhara M, Sato T, Yamamoto N, Fukano H, Kondo Y |
3640 - 3650 |
Determination of metastable zone width for combined anti-solvent/cooling crystallization Trifkovic M, Sheikhzadeh M, Rohani S |
3651 - 3655 |
Preparation of Sb2S3 nanomaterials with different morphologies via a refluxing approach Zhu QA, Gong M, Zhang C, Yong GB, Xiang S |
3656 - 3660 |
Physical properties of self-flux and WO3-containing solutions useful for growing type III KGd(PO3)(4) single crystals Sole R, Ruiz X, Pujol MC, Mateos X, Carvajal JJ, Aguilo M, Diaz F |
3661 - 3666 |
Formation of a blocky ferrite in Fe-Cr-Ni alloy during directional solidification Fu JW, Yang YS, Guo JJ |
3667 - 3673 |
Measurement and analysis of the dextran partition coefficient in sucrose crystallization Promraksa A, Flood AE, Schneider PA |
3674 - 3681 |
Precipitation of nanostructured calcite in a controlled multiphase process Kedra-Krolik K, Gierycz P |
3682 - 3686 |
A facile route to prepare boron nitride hollow particles at 450 degrees C Sun CH, Guo CL, Ma XJ, Xu LQ, Qian YT |
3687 - 3691 |
Preparation of single-crystalline ZnO films on ZnO-buffered a-plane sapphire by chemical bath deposition Hamada T, Ito A, Fujii E, Chu D, Kato K, Masuda Y |
3692 - 3696 |
Growth of large-sized Ce:Y3Al5O12 (Ce:YAG) scintillation crystal by the temperature gradient technique (TGT) Yang XB, Li HJ, Bi QY, Su LB, Xu J |
3697 - 3701 |
Formation of various polymorphs of calcium carbonate on porous membrane by electrochemical approach Watanabe J, Akashi M |
3702 - 3707 |
Study of Te inclusions in CdMnTe crystals for nuclear detector applications Babalola OS, Bolotnikov AE, Groza M, Hossain A, Egarievwe S, James RB, Burger A |
3708 - 3715 |
Ultrasonic refinement of magnesium by cavitation: Clarifying the role of wall crystals Qian M, Ramirez A, Das A |
3716 - 3720 |
Dependence of RF power on the phase transformation for boron nitride films deposited on graphite at room temperature Yang XX, Li HD, Li YG, Lue XY, Gao SY, Zhu PW, Zhang Q, Zhang TC, Zou GT |
3721 - 3725 |
Si enhances the growth of B4C nanowires Zhu M, Hu XY, Wei YN, Zhang YJ, Du XW, Zhang XZ |
3726 - 3730 |
Growth and characterization of c-plane AlGaN on gamma-LiAlO2 Tun CJ, Kuo CH, Fu YK, Kuo CW, Chou MMC, Chi GC |
3731 - 3736 |
Epitaxial films of metals from the platinum group (Ir, Rh, Pt and Ru) on YSZ-buffered Si(111) Gsell S, Fischer M, Schreck M, Stritzker B |
3737 - 3741 |
Sol-gel preparation and photoluminescence properties of Ce3+-activated Y3Al5O12 nano-sized powders Fadlalla HMH, Tang CC |
3742 - 3748 |
Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1-xN on Si (111) Saengkaew P, Dadgar A, Blaesing J, Hempel T, Veit P, Christen J, Krost A |
3749 - 3752 |
In-situ size control and structural characterization of barium titanate nanocrystal prepared by crystallization of amorphous phase Kim JE, Ohshima K, Rim YH, Yang YS |
3753 - 3760 |
Effect of minor alloying additions on the solidification of single-crystal Ni-base superalloys Cutler ER, Wasson AJ, Fuchs GE |
3761 - 3764 |
Evolution of cellular spacing during directional solid-state ferrite-austenite transformation of Fe-Mn-Al alloy Liu YC, Chen H, Gao ZM, Zhang YH, Shi QZ |
3765 - 3770 |
Chain structure in the unidirectionally solidified Al2O3-YAG-ZrO2 eutectic composite Nagira T, Yasuda H, Takeshima S, Sakimura T, Waku Y, Uesugi K |
3771 - 3774 |
Layer-by-layer growth and growth-mode transition of SrRuO3 thin films on atomically flat single-terminated SrTiO3 (111) surfaces Chang J, Park YS, Lee JW, Kim SK |
3775 - 3780 |
Green synthesis of metal sulfide nanocrystals through a general composite-surfactants-aided-solvothermal process Zhang XY, An CH, Wang ST, Wang ZX, Xia DH |
3781 - 3786 |
Nondestructive three-dimensional observation of defects in semi-insulating 6H-SiC single-crystal wafers using a scanning laser microscope (SLM) and infrared light-scattering tomography (IR-LST) Wutimakun P, Buteprongjit C, Morimoto J |
3787 - 3791 |
Large-scale synthesis of ZnSe nanoribbons on zinc substrate Wang HT, Tian T, Yan SC, Huang NP, Xiao ZD |
3792 - 3796 |
Growth and characterization of Nd:CLNGG crystal Shi ZB, Zhang HJ, Wang JY, Yu YG, Wang ZP, Yu HH, Sun SQ, Xia HR, Jiang MH |
3797 - 3800 |
Growth and characterization of calcium lithium tantalum gallium garnet single crystal Guo SY, Yu HH, Yu FP, Cheng XF, Yuan DR, Zhang HJ, Tao XT |
3801 - 3805 |
Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE Wu JJ, Katagiri Y, Okuura K, Li DB, Miyake H, Hiramatsu K |
3806 - 3810 |
Discussion of enthalpy, entropy and free energy of formation of GaN Jacob KT, Rajitha G |
3811 - 3811 |
Formation processes of zinc-oxide nanoparticles by ion implantation combined with thermal oxidation (vol 287, pg 2, 2006) Amekura H, Umeda N, Yoshitake M, Kono K, Kishimoto N, Buchal C |
3812 - 3812 |
p-Type ZnO thin films fabricated by Al-N co-doping method at different substrate temperature (Retraction of vol 273, pg 451, 2005) Yuan GD, Ye ZZ, Qian Q, Zhu LP, Huang JY, Zhao BH |