Journal of Crystal Growth

Journal of Crystal Growth, Vol.311, No.10 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (87 articles)

2759 - 2759	Proceedings of the 2nd International Symposium on Growth of III Nitrides Syuzennji, Japan 7-9 July, 2008 Preface Koukitu A, Amano H, Fujioka H
2761 - 2766	Growth of InN films and nanostructures by MOVPE Briot O, Ruffenach S, Moret M, Gil B, Giesen C, Heuken M, Rushworth S, Leese T, Succi M
2767 - 2771	Electron-carrier generation by edge dislocations in InN films: First-principles study Takei Y, Nakayama T
2772 - 2775	First principles studies on In-related nitride semiconductors Obata T, Iwata J, Shiraishi K, Oshiyama A
2776 - 2779	In-situ cyclic pulse annealing of InN on AlN/Si during IR-lamp-heated MBE growth Suzuki A, Bungi Y, Araki T, Nanishi Y, Mori Y, Yamamoto H, Harima H
2780 - 2782	Growth and characterization of N-polar and In-polar InN films by RF-MBE Yamaguchi T, Muto D, Araki T, Nanishi Y
2783 - 2786	Heteroepitaxial growth of InN layers on (111) silicon substrates Guo QX, Ogata M, Ding Y, Tanaka T, Nishio M
2787 - 2790	MOVPE growth of InN buffer layers on sapphire Briot O, Ruffenach S, Moret M, Gil B, Giesen C, Heuken M, Rushworth S, Leese T, Succi M
2791 - 2794	Alternative precursors for MOVPE growth of InN and GaN at low temperature Ruffenach S, Moret M, Briot O, Gil B, Giesen C, Heuken M, Rushworth S, Leese T, Succi M
2795 - 2797	Optical, structural investigations and band-gap bowing parameter of GaInN alloys Moret M, Gil B, Ruffenach S, Briot O, Giesen C, Heuken M, Rushworth S, Leese T, Succi M
2798 - 2801	InN excitonic deformation potentials determined experimentally Gil B, Moret M, Briot O, Ruffenach S, Giesen C, Heuken M, Rushworth S, Leese T, Succi M
2802 - 2805	MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor Thieu QT, Seki Y, Kuboya S, Katayama R, Onabe K
2806 - 2808	Crystal growth of InN by MOCVD with electric field along the c-axis Ota Y, Biswas R, Higo M, Inushima T
2809 - 2812	Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range Shioda T, Sugiyama M, Shimogaki Y, Nakano Y
2813 - 2816	Role of vapor-phase diffusion in selective-area MOVPE of InGaN/GaN MQWs Tomita Y, Shioda T, Sugiyama M, Shimogaki Y, Nakano Y
2817 - 2820	Mg doping behavior of MOVPE InxGa1-xN (x similar to 0.4) Islam MR, Sugita K, Horie M, Hashimoto A, Yamamoto A
2821 - 2824	Flow modulation effect on N incorporation into GaAs(1-x)Nx films during chemical beam epitaxy growth Suzuki H, Nishimura K, Saito K, Ohshita Y, Kojima N, Yamaguchi M
2825 - 2830	MOVPE growth of single-crystal hexagonal AlN on cubic diamond Taniyasu Y, Kasu M
2831 - 2833	Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template Katagiri Y, Kishino S, Okuura K, Miyake H, Hiramatu K
2834 - 2836	Growth characteristics of AlN on sapphire substrates by modified migration-enhanced epitaxy Banal RG, Funato M, Kawakami Y
2837 - 2839	Preparation of a crack-free AlN template layer on sapphire substrate by hydride vapor-phase epitaxy at 1450 degrees C Tajima J, Murakami H, Kumagai Y, Takada K, Koukitu A
2840 - 2843	MOVPE of AlN-free hexagonal GaN/cubic SiC/Si heterostructures for vertical devices Komiyama J, Abe Y, Suzuki S, Nakanishi H, Koukitu A
2844 - 2846	Formation of AlN layer on (111)Al substrate by ammonia nitridation Honda T, Yamamoto H, Sawadaishi M, Taguchi S, Sasaya K
2847 - 2849	AlGaN epitaxial lateral overgrowth on Ti-evaporated GaN/sapphire substrate Matsuoka R, Okimoto T, Nishino K, Naoi Y, Sakai S
2850 - 2852	Relaxation and recovery processes of AlxGa1-xN grown on AlN underlying layer Asai T, Nagata K, Mori T, Nagamatsu K, Iwaya M, Kamiyama S, Amano H, Akasaki I
2853 - 2856	Characterizations of GaN films and AlGaN/GaN heterostructures on vicinal sapphire (0001) substrates grown by MOCVD Shen XQ, Shimizu M, Okumura H, Xu FJ, Shen B, Zhang GY
2857 - 2859	Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes Lee KB, Parbrook PJ, Wang T, Bai J, Ranalli F, Airey RJ, Hill G
2860 - 2863	Novel UV devices on high-quality AlGaN using grooved underlying layer Tsuzuki H, Mori F, Takeda K, Iwaya M, Kamiyama S, Amano H, Akasaki I, Yoshida H, Kuwabara M, Yamashita Y, Kan H
2864 - 2866	Pseudomorphic growth of thick n-type AlxGa1-xN layers on low-defect-density bulk AlN substrates for UV LED applications Grandusky JR, Smart JA, Mendrick MC, Schowalter LJ, Chen KX, Schubert EF
2867 - 2874	Growth and properties of semi-polar GaN on a patterned silicon substrate Sawaki N, Hikosaka T, Koide N, Tanaka S, Honda Y, Yamaguchi M
2875 - 2878	HVPE growth of semi-polar (11(2)over-bar2)GaN on GaN template (113)Si substrate Suzuki N, Uchida T, Tanikawa T, Hikosaka T, Honda Y, Yamaguchi M, Sawaki N
2879 - 2882	Reduction of dislocations in a (11(2)over-bar2)GaN grown by selective MOVPE on (113)Si Tanikawa T, Kagohashi Y, Honda Y, Yamaguchi M, Sawaki N
2883 - 2886	Mg segregation in a (1(1)over-bar01) GaN grown on a 7 degrees off-axis (001) Si substrate by MOVPE Tomita K, Hikosaka T, Kachi T, Sawaki N
2887 - 2890	One-sidewall-seeded epitaxial lateral overgrowth of a-plane GaN by metalorganic vapor-phase epitaxy Iida D, Iwaya M, Kamiyama S, Amano H, Akasaki I
2891 - 2894	MOVPE growth and properties of GaN on (111)Si using an AlInN intermediate layer Irie M, Koide N, Honda Y, Yamaguchi M, Sawaki N
2895 - 2898	Epitaxial lateral overgrowth on (2(1)over-bar(1)over-bar0) a-plane GaN with [0(1)over-bar11]-oriented stripes Wernicke T, Zeimer U, Netzel C, Brunner F, Knauer A, Weyers M, Kneissl M
2899 - 2902	Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE Ma B, Miyagawa R, Hu WG, Li DB, Miyake H, Hiramatsu K
2903 - 2905	Optical properties of MOVPE-grown a-plane GaN and AlGaN Narukawa M, Miyagawa R, Ma B, Miyake H, Hiramatsu K
2906 - 2909	Photoluminescence study of Si-doped a-plane GaN grown by MOVPE Li DB, Ma B, Miyagawa R, Hu WG, Narukawa M, Miyake H, Hiramatsu K
2910 - 2913	Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate Sasaki H, Sunakawa H, Sumi N, Yamamoto K, Usui A
2914 - 2918	Maskless selective growth of semi-polar (11(2)over-bar2) GaN on Si (311) substrate by metal organic vapor phase epitaxy Yang M, Ahn HS, Tanikawa T, Honda Y, Yamaguchi M, Sawaki N
2919 - 2922	Optical characteristics of m-plane InGaN/GaN multiple quantum well grown on LiAlO2 (100) by MOVPE Hang DR, Chou MMC, Chang LW, Lin JL, Heuken M
2923 - 2925	Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth Polyakov AY, Smirnov NB, Govorkov AN, Markov AN, Yakimov EB, Vergeles PS, Amano H, Kawashima T
2926 - 2928	Growth of thick GaInN on grooved (10(1)over-bar(1)over-bar) GaN/(10(1)over-bar(2)over-bar) 4H-SiC Matsubara T, Senda R, Iida D, Iwaya M, Kamiyama S, Amano H, Akasaki I
2929 - 2932	InGaN growth with various InN mole fractions on m-plane ZnO substrate by metalorganic vapor phase epitaxy Kawai Y, Ohsuka S, Iwaya M, Kamiyama S, Amano H, Akasaki I
2933 - 2936	Quality and thermal stability of thin InGaN films Queren D, Schillgalies M, Avramescu A, Bruderl G, Laubsch A, Lutgen S, Strauss U
2937 - 2941	Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates Detchprohm T, Zhu M, Li Y, Xia Y, Liu L, Hanser D, Wetzel C
2942 - 2947	Characterization of GaInN/GaN layers for green emitting laser diodes Wetzel C, Li YF, Senawiratne J, Zhu MW, Xia Y, Tomasulo S, Persans PD, Liu LZ, Hanser D, Detchprohm T
2948 - 2952	N-face GaN growth on c-plane sapphire by metalorganic chemical vapor deposition Sun Q, Cho YS, Kong BH, Cho HK, Ko TS, Yerino CD, Lee IH, Han J
2953 - 2955	Nucleation characteristics of GaN nanorods grown on etched sapphire substrates by hydride vapor phase epitaxy Sohn Y, Kim C
2956 - 2961	Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy-Formation of high-quality GaN microcolumns Kato K, Kishino K, Sekiguchi H, Kikuchi A
2962 - 2965	Crystal growth and characterization of GaCrN nanorods on Si substrate Tambo H, Kimura S, Yamauchi Y, Hiromura Y, Zhou YK, Emura S, Hasegawa S, Asahi H
2966 - 2969	Formation of gallium nitride particles during the two-stage chemical vapor process Komoda H, Mori T, Kominami H, Nakanishi Y, Hara K
2970 - 2972	Growth of undoped and Zn-doped GaN nanowires Narukawa M, Koide S, Miyake H, Hiramatsu K
2973 - 2976	Pattern-size dependence of characteristics of nitride-based LEDs grown on patterned sapphire substrates Su YK, Chen JJ, Lin CL, Chen SM, Li WL, Kao CC
2977 - 2981	Effects of morphologies on the field emission characteristics of GaN nanorods grown on Si (001) by MBE Seo J, Hasegawa S, Asahi H
2982 - 2986	Nature of luminescence and strain in gallium nitride nanowires Mastro MA, Maximenko S, Gowda M, Simpkins BS, Pehrsson PE, Long JP, Makinen AJ, Freitas JA, Hite JK, Eddy CR, Kim J
2987 - 2991	Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates Ohachi T, Yamabe N, Shimomura H, Shimamura T, Ariyada O, Wada M
2992 - 2995	Influence of substrate temperature on nitridation of (001) GaAs using RF-radical source Naritsuka S, Mori M, Takeuchi Y, Maruyama T
2996 - 2999	GaN-based nitride semiconductor films deposited on nitrified HfO2/Si substrate by molecular beam epitaxy Hu FR, Sameshima H, Wakui M, Ito R, Hane K
3000 - 3002	Low-temperature characteristics of the current gain of GaN/InGaN double-heterojunction bipolar transistors Nishikawa A, Kumakura K, Kasu M, Makimoto T
3003 - 3006	Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates Chang SP, Chang SJ, Lu CY, Chiou YZ, Chuang RW, Lin HC
3007 - 3010	Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures Forsberg U, Lundskog A, Kakanakova-Georgieva A, Ciechonski R, Janzen E
3011 - 3014	Bulk GaN crystals grown by HVPE Fujito K, Kubo S, Nagaoka H, Mochizuki T, Namita H, Nagao S
3015 - 3018	Bulk ammonothermal GaN Dwilinski R, Doradzinski R, Garczynski J, Sierzputowski LP, Puchalski A, Kanbara Y, Yagi K, Minakuchi H, Hayashi H
3019 - 3024	Growth of GaN single crystals with extremely low dislocation density by two-step dislocation reduction Kawamura F, Tanpo M, Miyoshi N, Imade M, Yoshimura M, Mori Y, Kitaoka Y, Sasaki T
3025 - 3028	Accelerated surface flattening by alternating Ga flow in hydride vapor phase epitaxy Lee S, Kim C
3029 - 3032	Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure Huang HH, Chao CL, Chi TW, Chang YL, Liu PC, Tu LW, Tsay JD, Kuo HC, Cheng SJ, Lee WI
3033 - 3036	Hydride vapor phase epitaxial growth of thick GaN layers with in-situ optical monitoring Wang JF, Hu XJ, Zhang YM, Xu Y, Wang HB, Zhang BS, Xu K, Yang H
3037 - 3039	Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy Chen KM, Huang HH, Kuo YL, Wu PL, Chu TL, Yu HW, Lee WI
3040 - 3043	Synthesis of GaN crystal by the reaction of Ga with Li3N in NH3 atmosphere Hirano T, Mabuchi A, Sugiura T, Minoura H
3044 - 3048	Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition Mita S, Collazo R, Sitar Z
3049 - 3053	Nitridation of Si(111) for growth of 2H-AlN(0001)/beta-Si3N4/Si(111) structure Yamabe N, Shimomura H, Shimamura T, Ohachi T
3054 - 3057	Molecular beam epitaxial growth of hexagonal boron nitride on Ni(111) substrate Tsai CL, Kobayashi Y, Akasaka T, Kasu M
3058 - 3062	Homoepitaxy on bulk ammonothermal GaN Dwilinski R, Doradzinski R, Garczynski J, Sierzputowski LP, Zajac M, Rudzinski M
3063 - 3066	Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates Wuu DS, Wu HW, Chen ST, Tsai TY, Zheng XH, Horng RH
3067 - 3074	A review of III-nitride research at the Center for Quantum Devices Razeghi M, McClintock R
3075 - 3079	Point defects in group-III nitride semiconductors studied by positron annihilation Uedono A, Ishibashi S, Ohdaira T, Suzuki R
3080 - 3084	High-resolution X-ray diffraction analysis on HVPE-grown thick GaN layers Liu JQ, Wang JF, Liu YF, Huang K, Hu XJ, Zhang YM, Xu Y, Xu K, Yang H
3085 - 3088	Electron microscopy analysis of dislocation behavior in HVPE-AlGaN layer grown on a stripe-patterned (0001) sapphire substrate Kuwano N, Kugiyama Y, Nishikouri Y, Sato T, Usui A
3089 - 3092	HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice Li ZY, Lu TC, Kuo HC, Wang SC, Lo MH, Lau KM
3093 - 3096	An ab initio-based approach to the stability of GaN(0001) surfaces under Ga-rich conditions Ito T, Akiyama T, Nakamura K
3097 - 3099	Relationship between defects and optical properties in Er-doped GaN Chen SQ, Uedono A, Seo J, Sawahata J, Akimoto K
3100 - 3102	Expansion ratio dependence of lattice vibration of GaN using ab initio molecular dynamics calculations Uno K, Inoue T, Takizawa T, Tanaka I
3103 - 3105	Theoretical investigation on the decomposition process of GaN(0001) surface under a hydrogen atmosphere Suzuki H, Togashi R, Murakami H, Kumagai Y, Koukitu A
3106 - 3109	Theoretical approach to structural stability of c-GaN: How to grow cubic GaN Kangawa Y, Akiyama T, Ito T, Shiraishi K, Kakimoto K
3110 - 3113	In situ gravimetric monitoring of surface reactions between sapphire and NH3 Akiyama K, Ishii Y, Murakami H, Kumagai Y, Koukitu A