Journal of Crystal Growth

Journal of Crystal Growth, Vol.272, No.1-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (132 articles)

1 - 1	ICMOVPE-XII - The 12th International Conference on Metalorganic Vapor Phase Epitaxy - Introduction Biefeld RM, Stringfellow GB
2 - 8	Phase control of GaN on Si by nanoscale faceting in metalorganic vapor-phase epitaxy Lee SC, Sun XY, Hersee SD, Brueck SRJ
9 - 14	Ordering structure along the [001] direction of InAlAs Kurihara K, Namita H, Ueda R, Takashima M, Akimoto K, Sakata K, Takahashi T, Nakamura T, Shimoyama K
15 - 23	The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method Nakano T, Sugiyama M, Nakano Y, Shimogaki Y
24 - 29	An RDS, LEED, and STM study of MOCVD-prepared Si(100) surfaces Hannappel T, McMahon WE, Olson JM
30 - 36	Nitrogen-arsenic exchange process and investigation of the nitrided GaAs surfaces in MOVPE Hoffmann V, Poser F, Kaspari C, Weeke S, Pristovsek M, Richter W
37 - 41	Trimethylindium transport studies: the effect of different bubbler designs Smith LM, Odedra R, Kingsley A, Coward KM, Rushworth SA, Williams G, Leese TA, Purdie AJ, Kanjolia RK
42 - 46	Measurement of vapour pressure of In-based metalorganics for MOVPE Fulem M, Ruzicka K, Ruzicka V, Hulicius E, Simecek T, Pangrac J, Rushworth SA, Smith LM
47 - 51	Chemical kinetics and design of gas inlets for III-V growth by MOVPE in a quartz showerhead reactor Li ZQ, Zhou V, Li S, Rao TS, Jiang WY, Watkins SP
52 - 58	A combined fluid dynamic and 3D kinetic Monte Carlo investigation of the selective deposition of GaAs and InP Rondanini M, Cavallotti C, Moscatelli D, Masi M, Carra S
59 - 64	Improved process control, lowered costs and reduced risks through the use of non-destructive mobility and sheet carrier density measurements on GaAs and GaN wafers Nguyen D, Hogan K, Blew A, Cordes M
65 - 71	In situ stress measurements during MOCVD growth of AlGaN on SIC Acord JD, Raghavan S, Snyder DW, Redwing JM
72 - 75	In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature Dadgar A, Schulze F, Zettler T, Haberland K, Clos R, Strassburger G, Blasing J, Diez A, Krost A
76 - 80	Optimization of GaN MOVPE growth on patterned Si substrates using spectroscopic in situ reflectance Strittmatter A, Reissmann L, Trepk T, Pohl UW, Bimberg D, Zettler JT
81 - 86	Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE Steins R, Kaluza N, Hardtdegen H, Zorn M, Haberland K, Zettler JT
87 - 93	InN growth and annealing investigations using in-situ spectroscopic ellipsometry Drago M, Schmidtling T, Werner C, Pristovsek M, Pohl UW, Richter W
94 - 99	In situ metrology advances in MOCVD growth of GaN-based materials Belousov M, Volf B, Ramer JC, Armour EA, Gurary A
100 - 105	MOVPE GaN growth: determination of activation energy using in-situ reflectometry Kaluza N, Steins R, Hardtdegen H, Lueth H
106 - 110	In situ optical analysis of low temperature MOCVD GaN nucleation layer formation via multiple wavelength ellipsometry Schmidegg K, Neuwirt G, Stifter D, Sitter H, Bonanni A
111 - 117	Growth monitoring of GaAsSb : C/InP hetero structures with reflectance anisotropy spectroscopy Brunner F, Weeke S, Zorn M, Weyers M
118 - 124	Routine growth of InP based device structures using process calibration with optical in-situ techniques Wolfram P, Steimetz E, Ebert W, Grote N, Zettler JT
125 - 130	In-situ etching of InP and InGaAlAs materials by using HCl gas in metalorganic vapor-phase epitaxy Tsuchiya T, Kitatani T, Ouchi K, Sato H, Aoki M
131 - 137	Growth of GaP nanotree structures by sequential seeding of 1D nanowires Dick KA, Deppert K, Martensson T, Seifert W, Samuelson L
138 - 142	Artificial control of ZnO nanostructures grown by metalorganic chemical vapor deposition Fujita S, Kim SW, Ueda M, Fujita S
143 - 147	Real-time control of quantum dot laser growth using reflectance anisotropy spectroscopy Pohl UW, Potschke K, Kaiander I, Zettler JT, Bimberg D
148 - 153	Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth Elarde VC, Yeoh TS, Rangarajan R, Coleman JJ
154 - 160	Alternative precursor growth of quantum dot-based VCSELs and edge emitters for near infrared wavelengths Kaiander IN, Hopfer F, Kettler T, Pohl UW, Bimberg D
161 - 166	Formation of high-density GaN self-assembled quantum dots by MOCVD Hoshino K, Arakawa Y
167 - 174	Growth mechanisms for GaAs nanowires grown in CBE Persson AI, Ohlsson BJ, Jeppesen S, Samuelson L
175 - 179	MOVPE selectively grown GaAs nano-wires with self-aligned W side gate Ooike N, Motohisa J, Fukui T
180 - 185	Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates Motohisa J, Noborisaka J, Takeda J, Inari M, Fukui T
186 - 191	Growth of self-assembled AlxInyGa1-x-yN quantum dots by MOVPE Perez-Solorzano V, Groning A, Schweizer H, Jetter M
192 - 197	InAs quantum dots over InGaAs for infrared photodetectors Pires MP, Landi SM, Tribuzy CVB, Nunes LA, Marega E, Souza PL
198 - 203	Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD Sacilotti M, Decobert J, Sik H, Post G, Dumas C, Viste P, Patriarche G
204 - 210	Selective growth of GaInN quantum dot structures Jetter M, Perez-Solorzano V, Groening A, Ubl M, Graebeldinger H, Schweizer H
211 - 220	Growth of one-dimensional nanostructures in MOVPE Seifert W, Borgstrom M, Deppert K, Dick KA, Johansson J, Larsson MW, Martensson T, Skold N, Svensson CPT, Wacaser BA, Wallenberg LR, Samuelson L
221 - 226	Self-assembled In(Ga) as islands on Ge substrate Knuuttila L, Korkala T, Sopanen M, Lipsanen H
227 - 241	Growth and design of deep-UV (240-290 nm) light emitting diodes using AlGaN alloys Allerman AA, Crawford MH, Fischer AJ, Bogart KHA, Lee SR, Follstaedt DM, Provencio PP, Koleske DD
242 - 250	High efficiency GaN-based LEDs and lasers on SiC Edmond J, Abare A, Bergman M, Bharathan J, Bunker KL, Emerson D, Haberern K, Ibbetson J, Leung M, Russel P, Slater D
251 - 256	Impact of thermal annealing on the characteristics of InGaN/GaN LEDs on Si(111) Fehse K, Dadgar A, Krtschil A, Riemann T, Hempel T, Christen J, Krost A
257 - 263	Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes Kaeding JF, Wu Y, Fujii T, Sharma R, Fini PT, Speck JS, Nakamura S
264 - 269	Structure optimization of InGaN-GaN ultraviolet light-emitting diode with a low-energy electron injection mechanism Kim TG, Kim KC, Kim DH, Yoon SH, Lee JW, Sone CS, Park YJ
270 - 273	Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE Iida K, Kawashima T, Miyazaki A, Kasugai H, Mishima S, Honshio A, Miyake Y, Iwaya M, Kamiyama S, Amano H, Akasaki I
274 - 277	High-power laser structures grown on bulk GaN crystals Prystawko P, Czernetzki R, Gorczyca L, Targowski G, Wisniewski P, Perlin P, Zielinski M, Suski T, Leszczynski M, Grzegory I, Porowski S
278 - 284	MOCVD-grown InGaN-channel HEMT structures with electron mobility of over 1000cm(2)/Vs Okamoto N, Hoshino K, Hara N, Takikawa M, Arakawa Y
285 - 292	Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability Green DS, Gibb SR, Hosse B, Vetury R, Grider DE, Smart JA
293 - 299	MOVPE growth and characterization of high-Al-content AlGaN/GaN heterostructures on 100-mm-diameter sapphire substrates Miyoshi M, Sakai M, Ishikawa H, Egawa T, Jimbo T, Tanaka M, Oda O
300 - 304	High-performance GaN/InGaN heterostructure FETs on Mg-doped GaN current blocking layers Kuan TM, Chang SJ, Su YK, Lin JC, Wei SC, Wang CK, Huang CI, Lan WH, Bardwell JA, Tang H, Lin WJ, Cherng YT
305 - 311	LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices Poisson MAD, Magis M, Tordjman M, Aubry R, Sarazin N, Peschang M, Morvan E, Delage SL, di Persio J, Quere R, Grimbert B, Hoel V, Delos E, Ducatteau D, Gaquiere C
312 - 317	Influence of AlGaN nucleation layers on structural and electrical properties of GaN on 4H-SiC Boeykens S, Leys MR, Germain M, Belmans R, Borghs G
318 - 321	Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs Chowdhury U, Price RK, Wong MM, Yoo DW, Zhang XB, Feng M, Dupuis RD
322 - 326	Characterization of GaInN light-emitting diodes with distributed Bragg reflector grown on Si Ishikawa H, Zhang B, Asano K, Egawa T, Jimbo T
327 - 332	GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy Feng ZH, Qi YD, Lu ZD, Lau KM
333 - 340	Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy Qi YD, Liang H, Tang W, Lu ZD, Lau KM
341 - 347	Thermodynamic analysis of InN and InxGa1-xN MOVPE using various nitrogen sources Kumagai Y, Kikuchi J, Matsuo Y, Kangawa Y, Tanaka K, Koukitu A
348 - 352	Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system Tokunaga H, Ubukata A, Yano Y, Yamaguchi A, Akutsu N, Yamasaki T, Matsumoto K
353 - 359	Sapphire substrate misorientation effects on GaN nucleation layer properties Lu D, Florescu DI, Lee DS, Merai V, Ramer JC, Parekh A, Armour EA
360 - 369	Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design Matsumoto K, Tachibana A
370 - 376	Growth of AlN by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates Fujito K, Hashimoto T, Samonji K, Speck JS, Nakamura S
377 - 380	High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE Kawashima T, Iida K, Miyake Y, Honshio A, Kasugai H, Imura M, Iwaya M, Kamiyama S, Amano H, Akasaki I
381 - 385	Growth and characterization of AlInN on AlN template Fujimori T, Imai H, Wakahara A, Okada H, Yoshida A, Shibata T, Tanaka M
386 - 392	Characterisation of quaternary AlInGaN thick layers and quantum wells grown by MOVPE Perez-Solorzano V, Groening A, Haerle R, Schweizer H, Jetter M
393 - 399	The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy Oliver RA, Kappers MJ, Humphreys CJ, Briggs GAD
400 - 406	Nucleation and growth of InN thin films using conventional and pulsed MOVPE Johnson MC, Konsek SL, Zettl A, Bourret-Courchesne ED
407 - 414	MOVPE process for horizontal reactors with reduced parasitic deposition Hardtdegen H, Kaluza N, Steins R, Schmidt R, Wirtz K, Yakovlev EV, Talalaev RA, Makarov YN
415 - 419	Influence of the reactor total pressure on optical properties of MOCVD grown InGaN layers Strittmatter A, Reissmann L, Seguin R, Rodt S, Brostowski A, Pohl UW, Bimberg D, Hahn E, Gerthsen D
420 - 425	Aluminum incorporation control in AlGaN MOVPE: experimental and modeling study Kondratyev AV, Talalaev RA, Lundin WV, Sakharov AV, Tsatsul'nikov AV, Zavarin EE, Fomin AV, Sizov DS
426 - 431	As-grown p-type GaN growth by dimethylhydrazine nitrogen precursor Park EH, Park JS, Yoo TK
432 - 437	Antimony as a surfactant during the growth of GaN-based GaNAs alloys by metal organic vapor-phase epitaxy Kimura A, Liu ZY, Kuech TF
438 - 443	Facet-controlled three-step growth of high-quality GaN on sapphire substrates by mass-production-type metalorganic vapor phase epitaxy Nitta S, Yamamoto J, Koyama Y, Ban Y, Wakao K, Takahashi K
444 - 448	Influence of laser power on crystalline quality of InGaN with high indium content grown by pulse laser-assisted MOVPE Kangawa Y, Kawaguchi N, Kumagai Y, Koukitua A
449 - 454	AFM and temperature-dependent photoluminescence studies of the degree of localization induced by quantum-dot like states in InGaN single quantum well light emitting diodes grown by MOCVD on (0001) sapphire Florescu DI, Ramer JC, Merai VN, Parekh A, Lu D, Lee DS, Armour EA
455 - 459	Investigation of optical and electrical properties of Mg-doped p-InxGa1-xN, p-GaN and p-AlyGa1-yN grown by MOCVD Lee SN, Son J, Sakong T, Lee W, Paek H, Yoon E, Kim J, Cho YH, Nam O, Park Y
460 - 465	Structural, optical and electrical properties of GaN and InGaN films grown by MOCVD Poochinda K, Chen TC, Stoebe TG, Ricker NL
466 - 474	Optical and structural studies of GaN 3D structures selectively grown by MOCVD Viste P, Colombier I, Donatini F, Vial JC, Baldeck P, Herino R, Duc-Mauge A, Godfroyd J, Lacroute Y, Sacilotti M
475 - 480	Strain effects of AIN interlayers for MOVPE growth of crack-free AlGaN and AIN/GaN multilayers on GaN McAleese C, Kappers MJ, Rayment FDG, Cherns P, Humphreys CJ
481 - 488	Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlxGa1-xN/GaN superlattice underlayers Chichibu SF, Sugiyama M, Nozaka T, Suzuki T, Onuma T, Nakajima K, Aoyama T, Sumiya M, Chikyow T, Uedono A
489 - 495	Characterization of GaN grown on patterned Si(111) substrates Wang D, Dikme Y, Jia S, Chen KJ, Lau KM, van Gemmern P, Lin YC, Kalisch H, Jansen RH, Heuken M
496 - 499	GaN heteroepitaxy on Si(001) Schulze F, Dadgar A, Blasing J, Krost A
500 - 505	Growth and characterization of GaN-based structures on SiCOI-engineered substrates Dikme Y, van Gemmern P, Lin YC, Szymakowski A, Kalisch H, Faure B, Richtarch C, Larheche H, Bove P, Letertre F, Woitok JF, Efthimiadis K, Jansen RH, Heuken M
506 - 514	Growth of AlxGa1-xN-layers on planar and patterned substrates Rossow U, Fuhrmann D, Greve M, Blasing J, Krost A, Ecke G, Riedel N, Hangleiter A
515 - 519	Marker layers for the development of a multistep GaNFACELO process Habel F, Bruckner P, Scholz F
520 - 525	1.5 mu m VCSEL structure optimization for high-power and high-temperature operation Mereuta A, Syrbu A, Iakovlev V, Rudra A, Caliman A, Suruceanu G, Berseth CA, Deichsel E, Kapon E
526 - 530	Metalorganic vapor-phase epitaxy of room-temperature, low-threshold InGaAs/AlInAs quantum cascade lasers Bour D, Troccoli M, Capasso F, Corzine S, Tandon A, Mars D, Hofler G
531 - 537	Interdiffusion in highly strained InGaAs-QWs for high power laser diode applications Bugge F, Zeimer U, Wenzel H, Erbert G, Weyers M
538 - 542	MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emission Kuo HC, Yao HH, Chang YH, Chang YA, Tsai MY, Hsieh J, Chang EY, Wang SC
543 - 548	MOVPE growth of AlGaInAs-InP highly tensile-strained MQWs for 1.3 mu m low-threshold lasers Decobert J, Lagay N, Cuisin C, Dagens B, Thedrez B, Laruelle F
549 - 554	Red VCSEL for high-temperature applications Rossbach R, Ballmann T, Butendeich R, Schweizer H, Scholz F, Jetter M
555 - 558	Growth and characterization of InAlP/InGaAs double barrier RTDs Neumann S, Velling P, Prost W, Tegude FJ
559 - 563	Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/AlGaInP MQW structure Bondarev VY, Kozlovsky VI, Krysa AB, Roberts JS, Skasyrsky YK
564 - 569	High contrast InP/InGaAsP grating MOCVD regrowth using TBA and TBP Skogen EJ, Barton JS, Raring JW, Coldren LA, Denbaars SP
570 - 575	Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE Takeda J, Inari M, Motohisa J, Fukui T
576 - 581	Performance comparison between integrated 40 Gb/s EAM devices grown by selective area growth and butt-joint overgrowth Zhu JT, Billia L, Bour D, Corzine S, Hofler G
582 - 587	Selective MOVPE growth of tilted arrayed waveguides from [011] direction Kawakita Y, Kawai A, Shimotaya S, Shimomura K
588 - 595	Pendeoepitaxy of GaAs and In0.15Ga0.85As using laterally oxidized GaAs/Al0.96Ga0.04As templates Cederberg JG, Waldrip KE, Peake GM
596 - 602	High uniformity of InGaAsP layers grown by multi-wafer MOVPE system Shimizu E, Sugawara S, Nakata H
603 - 608	Correlation of film properties and reduced impurity concentrations in sources for III/V-MOVPE using high-purity trimethylindium and tertiarybutylphosphine Shenai DV, Timmons ML, DiCarlo RL, Marsman CJ
609 - 614	MOVPE growth of (AlGaIn)P/(GaIn)P heterostructures using TBP El-Zein N, Greiling A, Koch J, Stolz W, Reinhard S, McDermott BT
615 - 620	Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates Rudra A, Pelucchi E, Oberli DY, Moret N, Dwir B, Kapon E
621 - 626	Passivation of GaAs surface by ultrathin epitaxial GaN layer Riikonen J, Sormunen J, Koskenvaara H, Mattila M, Sopanen M, Lipsanen H
627 - 632	Defect study of MOVPE-grown InGaP layers on GaAs Knauer A, Krispin P, Balakrishnan VR, Weyers M
633 - 641	Material properties of graded composition InxGa1-xP buffer layers grown on GaP by organometallic vapor phase epitaxy Hasenohrl S, Novak J, Vavra I, Satka A
642 - 649	Intrinsic carbon doping of (AlGa)As for (InGa)As laser structures (lambda approximate to 1.17 mu m) Gottschalch V, Leibiger G, Benndorf G, Herrnberger H, Spemann D
650 - 657	Tellurium surfactant effects in the growth of lattice mismatched InAsxP1-x, by metal organic vapor-phase epitaxy Newman FD, Stan MA, Murray SL, Murray CS
658 - 663	Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl3 Uchida K, Takahashi K, Kabe S, Nozaki S, Morisaki H
664 - 681	Progress and continuing challenges in GaSb-based III-V alloys and heterostructures grown by organometallic vapor-phase epitaxy Wang CA
682 - 685	MOVPE-grown quantum cascade lasers operating at similar to 9 mu m wavelength Krysa AB, Roberts IS, Green RP, Wilson LR, Page H, Garcia M, Cockburn JW
686 - 693	Effects of gas switching sequences on GaAs/GaAs1-Sb-y(y) superlattices Hawkins BE, Khandekar AA, Yeh JY, Mawst LJ, Kuech TF
694 - 699	Reconstructions of MOVPE-prepared group-V-rich GaAsSb(100) surfaces Kollonitsch Z, Moller K, Willig F, Hannappel T
700 - 705	C-doped GaAsSb base HBT without hydrogen passivation grown by MOVPE Oda Y, Watanabe N, Uchida M, Kurishima K, Kobayashi T
706 - 710	Optimized 9x2-inch MOVPE reactor for the growth of Al-containing antimonides Dimroth F, Bett AW, Giesen C, Heuken M
711 - 718	Effect of growth interruption on surface recombination velocity in GaInAsSb/AlGaAsSb heterostructures grown by organometallic vapor-phase epitaxy Wang CA, Shiau DA, Donetsky D, Anikeev S, Belenky G, Luryi S
719 - 725	Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-mu m regime Yeh JY, Mawst LJ, Tansu N
726 - 731	Comparison of dilute nitride growth on a single- and 8x4-inch multiwafer MOVPE system for solar cell applications Dimroth F, Baur C, Bett AW, Volz K, Stolz W
732 - 738	Solar cells with (BGaIn)As and (InGa)(NAs) as absorption layers Leibiger G, Krahmer C, Bauer J, Herrnberger H, Gottschalch V
739 - 747	Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance Volz K, Torunski T, Kunert B, Rubel O, Nau S, Reinhard S, Stolz W
748 - 752	Improved performance of MOVPE-grown GaInNAs quantum wells by control of interfacial strain Kim KS, Yoo JR, Lim SJ, Kim KH, Kim T, Park YJ
753 - 759	MOVPE growth experiments of the novel (GaIn)(NP)/GaP material system Kunert B, Koch J, Torunski T, Volz K, Stolz W
760 - 764	Considerable improvement of optical property of GaInNAs/GaAs quantum well Ishizuka T, Yamada T, Iguchi Y, Saito T, Katsuyama T, Takagishi S
765 - 771	Temperature dependence of the optical properties on GaInNP Hsu SH, Su YK, Chang SJ, Lin KI, Lan WH, Wu PS, Wu CH
772 - 777	Te-co-doping experiments in ferromagnetic Mn(Ga)As/GaAs cluster hybrid layers by MOVPE Lampalzer M, Nau S, Pietzonka C, Treutmann W, Volz K, Stolz W
778 - 784	Atomic vapour deposition (AVD) of SrBi2Ta2O9 using an all alkoxide precursor Chalker PR, Potter RJ, Roberts JL, Jones AC, Smith LM, Schumacher M
785 - 788	Microscopic spatial distribution of bound excitons in high-quality ZnO Bertram F, Forster D, Christen J, Oleynik N, Dadgar A, Krost A
789 - 794	Preparation and characterization of ultra-thin ferroelectric PZT films grown by plasma-assisted CVD Nishida K, Shirakata K, Osada M, Katoda T
795 - 799	Growth of ZnO films by MOVPE using diisopropylzinc and alcohols Fujita Y, Nakai R
800 - 804	Heteroepitaxy and nitrogen doping of high-quality ZnO Dadgar A, Oleynik N, Blasing J, Deiter S, Forster D, Bertram F, Diez A, Seip M, Greiling A, Christen J, Krost A
805 - 809	MOCVD growth of monomethylhydrazine-doped ZnO layers Saito K, Hosokai Y, Nagayama K, Ishida K, Takahashi K, Konagai M, Zhang BP
810 - 815	Efficient removal of UDMH from dilute nitride MOCVD exhaust streams Pahle J, Czerniak M, Seeley A, Baker D
816 - 821	Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors Shenai-Khatkhate DV, Goyette RJ, DiCarlo RL, Dripps G
822 - 828	Safety benefits of using a sub-atmospheric pressure hydride gas source for MOCVD Raynor MW, Houlding VH, Frye R, Olander K
829 - 835	Environmental considerations in the MOVPE growth of (Hg,Cd)Te Porter KA, Hails JE, Pardoe JAJ, Cole-Hamilton DJ, Blacker NJ
836 - 843	Developments in abatement technology for MOCVD processing Sweeney J, Marganski P, Olander K, Watanabe T, Tomita N, Orlando G, Torres R