Journal of Crystal Growth

Journal of Crystal Growth, Vol.251, No.1-4 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (158 articles)

1 - 8	Three decades of molecular beam epitaxy Foxon CT
9 - 16	Progress and prospects of advanced quantum nanostructures and roles of molecular beam epitaxy Sakaki H
17 - 22	Speculations about future directions Kroemer H
23 - 28	Theoretical study of In desorption and segregation kinetics in MBE growth of InGaAs and InGaN Stanley I, Coleiny G, Venkat R
29 - 34	A simple model for MBE growth controlled by group III atom migration Holland MC
35 - 39	Dynamics of spontaneous roughening on the GaAs(001)-(2 x 4) surface Ding Z, Bullock DW, Oliver WF, Thibado PM, LaBella VP
40 - 45	Desorption process of GaAs surface native oxide controlled by direct Ga-beam irradiation Asaoka Y
46 - 50	Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing in MBE Tsukamoto S, Pristovsek M, Ohtake A, Orr BG, Bell GR, Ohno T, Koguchi N
51 - 55	Time-resolved X-ray diffraction study on surface structure and morphology during molecular-beam epitaxy growth Takahasi M, Yoneda Y, Inoue H, Yamamoto N, Mizuki J
56 - 61	Island and pit kinetics on the growing GaAs (001) surface studied by synchrotron X-ray diffraction Braun W, Jenichen B, Kaganer VM, Shtukenberg AS, Daweritz L, Ploog KH
62 - 67	Control of MBE surface step-edge kinetics to make an atomically smooth quantum well Yoshita M, Oh JW, Akiyama H, Pfeiffer LN, West KW
68 - 72	Real-time surface composition and roughness analysis in MBE using RHEED-induced X-ray fluorescence Braun W, Ploog KH
73 - 79	Accuracy of AlGaAs growth rates and composition determination using RHEED oscillations Harvey TE, Bertness KA, Hickernell RK, Wang CM, Splett JD
80 - 84	V/III ratio dependence of surface migration length of As-4 molecules during molecular beam epitaxy of GaAsP on (411)A GaAs substrates Higuchi Y, Uemura M, Masui Y, Kitada T, Shimomura S, Hiyamizu S
85 - 89	Mesoscopic island structure at GaAs /(AlGa)As interfaces grown by MBE Gottwaldt L, Pierz K, Ahlers FJ, Gobel EO, Nau S, Torunski T, Stolz W
90 - 95	Characterization of interface roughness scattering of electrons in an In0.53Ga0.47As/In0.52Al0.48As QW-HEMT structure with (411)A super-flat interfaces Watanabe I, Kanzaki K, Kitada T, Yamamoto M, Shimomura S, Hiyamizu S
96 - 100	Electronic properties of etched-regrown heterostructure interfaces Beyer S, Lohr S, Heyn C, Heitmann D, Hansen W
IX - X	Molecular Beam Epitaxy 2002 - Proceedings of the Twelfth International Conference on Molecular Beam Epitaxy, San Francisco, CA, USA, 15-20 September 2002 - Preface Harris JS, Miller DL, Tu CW
101 - 105	Influence of indium segregation on the RHEED oscillations during the growth of InGaAs layers on a GaAs(001) surface Martini S, Quivy AA, Lamas TE, da Silva MJ, da Silva ECF, Leite JR
106 - 111	Kinetics of dislocation-mediated strain relaxation in InGaAs/GaAs heteroepitaxy Beresford R, Lynch C, Chason E
112 - 117	Interplay between relaxation, surface morphology and composition modulation in InAlAs graded buffer layers Chauveau JM, Cordier Y, Kim HJ, Ferre D, Androussi Y, Di Persio J
118 - 123	Effects of noise level in fitting in situ optical reflectance spectroscopy data Fu CC, Bertness KA, Wang CM
124 - 129	InGaAs composition monitoring for production MBE by in situ optical-based flux monitor (OFM) Pinsukanjana PR, Marquis JM, Hubbard J, Trivedi MA, Dickey RF, Tsai JMS, Kuo SP, Kao PS, Kao YC
130 - 134	Multiwafer gas source MBE development for InGaAsP/InP laser production Lelarge F, Sanchez JJ, Gaborit F, Gentner JL
135 - 139	Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy Zhan HH, Notzel R, Hamhuis GJ, Eijkemans TJ, Wolter JH
140 - 144	Ga/In-intermixing and segregation during InAs quantum dot formation Heyn C, Hansen W
145 - 149	Influence of initial GaAs and A1As cap layers on InAs quantum dots grown by molecular beam epitaxy Ferdos F, Wang SM, Wei YQ, Sadeghi M, Zhao QX, Larsson A
150 - 154	Strain-driven (In,Ga)As growth instability on GaAs (311)A and (311)B: self-organization of template for InAs quantum dot nucleation control Gong Q, Notzel R, Wolter JH
155 - 160	Controlling the shape of InAs self-assembled quantum dots by thin GaAs capping layers Takehana K, Pulizzi F, Patane A, Henini M, Main PC, Eaves L, Granados D, Garcia JM
161 - 165	Scanning tunneling microscopy study of GaAs overgrowth on InAs islands formed on GaAs(001) Hasegawa S, Suekane O, Takata M, Nakashima H
166 - 171	Photoluminescence investigation of low-temperature, capped self-assembled InAs/GaAs quantum-dots Songmuang R, Kiravittaya S, Sawadsaringkarn M, Panyakeow S, Schmidt OG
172 - 176	Aluminium incorporation for growth optimization of 1.3 mu m emission InAs/GaAs quantum dots by molecular beam epitaxy Wei YQ, Wang SM, Ferdos F, Vukusic J, Zhao QX, Sadeghi M, Larsson A
177 - 180	Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots Xu ZC, Leosson K, Birkedal D, Hvam JM, Sadowski I, Zhao ZY, Chen XS, Liu YM, Yang KT
181 - 185	Optical response at 1.3 mu m and 1.5 mu m with InAs quantum dots embedded in a pure GaAs matrix da Silva MJ, Quivy AA, Martini S, Lamas TE, da Silva ECF, Leite JR
186 - 191	Magneto-photoluminescence studies of the influence of substrate orientation on the growth of InAs/GaAs quantum dots Maes J, Henini M, Hayne M, Patane A, Pulizzi F, Eaves L, Main PC, Moshchalkov VV
192 - 195	Emission energy and polarization tuning of InAs/GaAs self-assembled quantum dots by growth interruption Ochoa D, Polimeni A, Capizzi M, Patane A, Henini M, Eaves L, Main PC
196 - 200	Observation of blue-shifted photoluminescence in stacked InAs/GaAs quantum dots Somintac A, Estacio E, Salvador A
201 - 207	Growth of self-assembled InAs quantum dots on Si exposed GaAs substrates by molecular beam epitaxy Saucedo-Zeni N, Zamora-Peredo L, Gorbatchev AY, Lastras-Martinez A, Balderas-Navarro R, Medel-Ruiz CI, Mendez-Garcia VH
208 - 212	Characteristics of InAs "dots-in-a-graded-well" Chen L, Pal D, Towe E
213 - 217	Customized nanostructures MBE growth: from quantum dots to quantum rings Granados D, Garcia JM
218 - 222	Desorption of InAs quantum dots Heyn C, Hansen W
223 - 229	Growth and temperature characteristic of self-assembled InAs-QD on GaInP Amanai H, Nagao S, Sakaki H
230 - 235	Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 mu m quantum dot laser Paranthoen C, Platz C, Moreau G, Bertru N, Dehaese O, Le Corre A, Miska P, Even J, Folliot H, Labbe C, Patriarche G, Simon JC, Loualiche S
236 - 242	Study of the GaAs growth on pseudomorphic Si layers for the formation of self-assembled quantum dots Perez-Centeno A, Mendez-Garcia VH, Zamora-Peredo L, Saucedo-Zeni N, Lopez-Lopez M
243 - 247	Growth and microstructure of semimetallic ErAs particles embedded in an In0.53Ga0.47As matrix Driscoll DC, Hanson MP, Mueller E, Gossard AC
248 - 252	Epitaxial growth of 1.55 mu m emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications Schwertberger R, Gold D, Reithmaier JP, Forchel A
253 - 257	Molecular beam epitaxial growth studies of ordered GaAs nanodot arrays using anodic alumina masks Mei XY, Blumin M, Kim D, Wu ZH, Ruda HE
258 - 263	Self-assembled nanoholes and lateral QD bi-molecules by molecular beam epitaxy and atomically precise in situ etching Kiravittaya S, Songmuang R, Jin-Phillipp NY, Panyakeow S, Schmidt OG
264 - 268	Role of In desorption for formation of self-organized (In,Ga)As quantum wires on GaAs(100) during superlattice formation Mano T, Notzel R, Hamhuis GJ, Eijkemans TJ, Wolter JH
269 - 275	Improved uniformity of self-organized In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxy Ohno Y, Shimomura S, Hiyamizu S
276 - 280	Formation of nano-oxide regions in p(2+)-GaAs epilayers by localized atomic force microscope probe oxidation for fabrication of nano-structure devices Matsuzaki Y, Ota N, Yamada A, Sandhu A, Konagai M
281 - 284	Application of multi-step formation during molecular beam epitaxy for fabricating novel nanomechanical structures Yamaguchi H, Hirayama Y
285 - 291	Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors Ohno H
292 - 296	Growth and properties of ferromagnet-semiconductor heterostructures for spin injection at room temperature Ploog KH, Herfort J, Schonherr HP, Moreno M, Dhar S
297 - 302	Structural and magnetic order in MnAs films grown by molecular beam epitaxy on GaAs for spin injection Daweritz L, Kastner M, Hesjedal T, Plake T, Jenichen B, Ploog KH
303 - 310	MBE growth, structural, and transport properties of Mn delta-doped GaAs layers Nazmul AM, Sugahara S, Tanaka M
311 - 316	The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers Campion RP, Edmonds KW, Zhao LX, Wang KY, Foxon CT, Gallagher BL, Staddon CR
317 - 322	Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact (111)B GaAs substrates: the effect of ultrathin GaAs buffer layers Sugahara S, Tanaka M
323 - 326	Growth of the half-Heusler alloy NiMnSb on (In,Ga)As/InP by molecular beam epitaxy Bach P, Ruster C, Gould C, Becker CR, Schmidt G, Molenkamp LW
327 - 330	MBE growth and properties of GaCrN Hashimoto M, Zhou YK, Kanamura M, Katayama-Yoshida H, Asahi H
331 - 336	MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties Chen PP, Makino H, Kim JJ, Yao T
337 - 341	Spin injection from a ferromagnetic electrode into InAs surface inversion layer Yoh K, Ohno H, Katano Y, Mukasa K, Ramsteiner M
342 - 346	New structures for carrier-controlled ferromagnetism in Cd1-xMnxTe quantum wells Bertolini M, Maslana W, Boukari H, Gilles B, Cibert J, Ferrand D, Tatarenko S, Kossacki P, Gaj JA
347 - 352	Molecular beam epitaxial growth of CdMnSe on InAs and AlGaSb Grabs P, Slobodskyy A, Richter G, Fiederling R, Gould C, Becker CR, Schmidt G, Molenkamp LW
353 - 359	GaInNAs for GaAs based lasers for the 1.3 to 1.5 mu m range Fischer M, Gollub D, Reinhardt M, Kamp M, Forchel A
360 - 366	The role of Sb in the MBE growth of (GaIn)(NAsSb) Volz K, Gambin V, Ha W, Wistey MA, Yuen H, Bank S, Harris JS
367 - 371	1.5 mu m GaInNAs(Sb) lasers grown on GaAs by MBE Bank S, Ha W, Gambin V, Wistey M, Yuen H, Goddard L, Kim S, Harris JS
372 - 377	Growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxy Makino S, Miyamoto T, Ohta M, Kageyama T, Ikenaga Y, Koyama F, Iga K
378 - 382	A study and control of lattice sites of N and In/Ga interdiffusion in dilute nitride quantum wells Peng CS, Li W, Jouhti T, Pavelescu EM, Pessa M
383 - 387	Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE Chauveau JM, Trampert A, Pinault MA, Tournie E, Du K, Ploog KH
388 - 391	InAs/InGaAsN quantum dots emitting at 1.55 mu m grown by molecular beam epitaxy Ustinov VM, Egorov AY, Odnoblyudov VA, Kryzhanovskaya NV, Musikhin YG, Tsatsul'nikov AF, Alferov ZI
392 - 398	A comparison of MBE- and MOCVD-grown GaInNAs Ptak AJ, Johnston SW, Kurtz S, Friedman DJ, Metzger WK
399 - 402	Thickness dependent roughening of Ga(As,N)/GaAs MQW structures with high nitrogen content Mussler G, Daweritz L, Ploog KH
403 - 407	Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 mu m wavelength Li LH, Patriarche G, Lemaitre A, Largeau L, Travers L, Harmand JC
408 - 411	Structural changes on annealing of MBE grown (Ga, In) (N, As) as measured by X-ray absorption fine structure Gambin V, Lordi V, Ha W, Wistey M, Takizawa T, Uno K, Friedrich S, Harris J
412 - 416	Growth of GaInNAs by atomic hydrogen-assisted RF-MBE Ohmae A, Matsumoto N, Okada Y
417 - 421	Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures Egorov AY, Odnobludov VA, Mamutin VV, Zhukov AE, Tsatsul'nikov AF, Kryzhanovskaya NV, Ustinov VM, Hong YG, Tu CW
422 - 426	RF-MBE growth of InAsN layers on GaAs (001) substrates using a thick InAs buffer layer Nishio S, Nishikawa A, Katayama R, Onabe K, Shiraki Y
427 - 431	MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (001) Nishikawa A, Katayama R, Onabe K, Shiraki Y
432 - 436	MBE development of dilute nitrides for commercial long-wavelength laser applications Malis O, Liu WK, Gmachl C, Fastenau JM, Joel A, Gong P, Bland SW, Moshegov N
437 - 442	Growth and characterization of GaInNP grown on GaAs substrates Hong YG, Juang FS, Kim MH, Tu CW
443 - 448	Improvement of crystalline quality of GaAsyP1-x-yNx layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation Momose K, Yonezu H, Furukawa Y, Utsumi A, Yoshizumi Y, Shinohara S
449 - 454	Surfactant enhanced growth of GaNAs and InGaNAs using bismuth Tixier S, Adamcyk M, Young EC, Schmid JH, Tiedje T
455 - 459	Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (100) by plasma assisted molecular beam epitaxy Kimura R, Shigemori A, Shike J, Ishida K, Takahashi K
460 - 464	Control of the polarity of GaN films using an Mg adsorption layer Grandjean N, Dussaigne A, Pezzagna S, Vennegues P
465 - 470	Single-crystal zincblende GaN grown on GaP (100) substrate by molecular beam epitaxy Kim MH, Juang FS, Hong YG, Tu CW, Park SJ
471 - 475	In surface segregation in InGaN/GaN quantum wells Dussaigne A, Damilano B, Grandjean N, Massies J
476 - 480	Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence Dimakis E, Georgakilas A, Androulidaki M, Tsagaraki K, Kittler G, Kalaitzakis F, Cengher D, Bellet-Amalric E, Jalabert D, Pelekanos NT
481 - 486	Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs Katzer DS, Storm DF, Binari SC, Roussos JA, Shanabrook BV, Glaser ER
487 - 493	Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1(1)over-bar-00) and (0001) GaN Bhattacharyya A, Friel I, Iyer S, Chen TC, Li W, Cabalu J, Fedyunin Y, Ludwig KF, Moustakas TD, Maruska HP, Hill DW, Gallagher JJ, Chou MC, Chai B
494 - 498	Plasma-assisted MBE growth of InN films and InAlN/InN heterostructures Higashiwaki M, Matsui T
499 - 504	MOMBE growth studies of GaN using metalorganic sources and nitrogen Li T, Campion RP, Foxon CT, Rushworth SA, Smith LM
505 - 509	Nucleation and growth of GaN observed by in situ line-of-sight mass spectrometry Averbeck R, Koblmueller G, Riechert H, Pongratz P
510 - 514	Arsenic incorporation in GaN during growth by molecular beam epitaxy Foxon CT, Novikov SV, Li T, Campion RP, Winser AJ, Harrison I, Kappers MJ, Humphreys CJ
515 - 520	Digital alloy growth in mixed As/Sb heterostructures Kaspi R, Donati GP
521 - 525	GaAsSb/GaAs band alignment evaluation for long-wave photonic applications Johnson SR, Guo CZ, Chaparro S, Sadofyev YG, Wang J, Cao Y, Samal N, Xu J, Yu SQ, Ding D, Zhang YH
526 - 531	Investigation of a growth interruption under an As flux at AlSb/InAs interfaces with InSb bonds Sigmund J, Karova K, Miehe G, Saglam M, Hartnagel HL, Fuess H
532 - 537	Controlled n-type doping of antimonides and arsenides using GaTe Bennett BR, Magno R, Papanicolaou N
538 - 542	MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells Solov'ev VA, Terent'ev YV, Toropov AA, Mel'tser BY, Semenov AN, Ivanov SV, Kop'ev PS, Meyer JR
543 - 546	Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells Kadow C, Lin HK, Dahlstrom M, Rodwell M, Gossard AC, Brar B, Sullivan G
547 - 550	Structure stability of short-period InAs/AlSb superlattices Xu DP, Litvinchuk AP, Wang X, Delaney A, Le H, Pei SS
551 - 555	Anisotropic structural and electronic properties of InSb/AlxIn1-xSb quantum wells grown on GaAs (001) substrates Mishima TD, Keay JC, Goel N, Ball MA, Chung SJ, Johnson MB, Santos MB
556 - 559	InAs/AlGaSb heterostructure displacement sensors for MEMS/NEMS applications Yamaguchi H, Miyashita S, Hirayama Y
560 - 564	Transport properties of Sn-doped InSb thin films and applications to Hall element Okamoto A, Shibasaki I
565 - 570	Characterization of MBE grown II-VI semiconductor thin layers by X-ray interference Prior KA, Tang X, O'Donnell C, Bradford C, David L, Cavenett BC
571 - 575	Accuracy of the in situ determination of the CdZnTe temperature by ellipsometry before the growth of HgCdTe by MBE Badano G, Garland JW, Sivananthan S
576 - 580	PL characteristics of MBE-grown, Pb-doped ZnSe crystal layers Mita Y, Kuronuma R, Sasaki S, Inoue M, Maruyama S
581 - 585	Growth and characterization of MgS/CdSe self-assembled quantum dots Bradford C, Urbaszek B, Funato M, Graham TCM, McGhee EJ, Warburton RJ, Prior KA, Cavenett B
586 - 590	Growth and characterization of CdSe : Mn quantum dots Tang X, Urbaszek B, Graham TCM, Warburton RJ, Prior KA, Cavenett BC
591 - 595	Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulfur source David L, Bradford C, Tang X, Graham TCM, Prior KA, Cavenett BC
596 - 601	High quality ZnTe heteroepitaxy layers using low-temperature buffer layers Chang JH, Godo K, Song JS, Oh D, Lee C, Yao T
602 - 606	Growth conditions in molecular beam epitaxy for controlling CdSeTe epilayer composition Matsumura N, Sakamoto T, Saraie J
607 - 611	Electrical properties of heavily Al-doped ZnSe grown by molecular beam epitaxy Oh DC, Chang JH, Takai T, Song JS, Godo K, Park YK, Shindo K, Yao T
612 - 618	Strong luminescence due to localized excitons in CdTe/ZnSe fractional monolayer structures Chang JH, Takai T, Godo K, Makino H, Goto T, Yao T
619 - 622	MBE growth and characterization of A-site deficient, low-field magnetoresistance (Pr1-xSrx)(y)MnO3-delta oriented thin films Liu GJ, Feng YH, Wang HM, Makino H, Hanada T, Yao T
623 - 627	ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy Ogata K, Koike K, Tanite T, Komuro T, Yan F, Sasa S, Inoue M, Yano M
628 - 632	Doping effects in ZnO layers using Li3N as a doping source Ko HJ, Chen YF, Hong SK, Yao T
633 - 637	Natural ordering of ZnO1-xSex grown by radical. source MBE Iwata K, Yamada A, Fons P, Matsubara K, Niki S
638 - 644	Development of integrated hetero structures on silicon by MBE Droopad R, Yu ZY, Li H, Liang Y, Overgaard C, Demkov A, Zhang XD, Moore K, Eisenbeiser K, Hu M, Curless J, Finder J
645 - 650	Advances in high kappa gate dielectrics for Si and III-V semiconductors Kwo J, Hong M, Busch B, Muller DA, Chabal YJ, Kortan AR, Mannaerts JP, Yang B, Ye P, Gossmann H, Sergent AM, Ng KK, Bude J, Schulte WH, Garfunkel E, Gustafsson T
651 - 656	Heavy arsenic doping of silicon by molecular beam epitaxy Liu X, Tang Q, Kamins TI, Harris JS
657 - 661	Ordered arrays of rare-earth silicide nanowires on Si(001) Ragan R, Chen Y, Ohlberg DAA, Medeiros-Ribeiro G, Williams RS
662 - 665	Nucleation of Ti-catalyzed self-assembled kinked Si nanowires grown by gas source MBE Tang Q, Liu X, Kamins TI, Solomon GS, Harris JS
666 - 669	Critical thickness of self-assembled Ge quantum dot superlattices Liu JL, Wan J, Wang KL, Yu DP
670 - 675	Growth of SiGe/Ge/SiGe heterostructures with ultrahigh hole mobility and their device application Irisawa T, Koh S, Nakagawa K, Shiraki Y
676 - 680	Dynamics and surface segregation during GSMBE of Si1-yCy and Si1-x-yGexCy on the Si(001) surface Price RW, Tok ES, Liu R, Wee ATS, Woods NJ, Zhang J
681 - 684	Characterization of epitaxial Si1-yCy layers on Si(001) grown by gas-source molecular beam epitaxy Abe K, Yamada A, Konagai M
685 - 688	Relaxation enhancement of SiGe thin layers by ion implantation into Si substrates Sawano K, Hirose Y, Koh S, Nakagawa K, Hattori T, Shiraki Y
689 - 692	Hole transport properties of B-doped relaxed SiGe epitaxial films grown by molecular beam epitaxy Koh S, Murata K, Irisawa T, Nakagawa K, Shiraki Y
693 - 696	Planarization of SiGe virtual substrates by CMP and its application to strained Si modulation-doped structures Sawano K, Arimoto K, Hirose Y, Koh S, Usami N, Nakagawa K, Hattori T, Shiraki Y
697 - 700	Continuous wave operation of quantum cascade lasers Beck M, Hofstetter D, Aellen T, Blaser S, Faist J, Oesterle U, Gini E
701 - 706	Thermal behavior of GaAs/AlGaAs quantum-cascade lasers: effect of the Al content in the barrier layers Ortiz V, Becker C, Page H, Sirtori C
707 - 717	Strain compensated Si/Si0.2Ge0.8 quantum cascade structures grown by low temperature molecular beam epitaxy Grutzmacher D, Mentese S, Muller E, Diehl L, Sigg H, Campidelli Y, Kermarrec O, Bensahel D, Roch T, Stangl J, Bauer G
718 - 722	InAs-based quantum cascade light emitting structures containing a double plasmon waveguide Ohtani K, Sakuma H, Ohno H
723 - 728	Material engineering for InAs/GaSb/AlSb quantum cascade light emitting devices Marcadet X, Becker C, Garcia M, Prevot I, Renard C, Sirtori C
729 - 736	InAs/InGaAs/GaAs quantum dot lasers of 1.3 mu m range with enhanced optical gain Kovsh AR, Maleev NA, Zhukov AE, Mikhrin SS, Vasil'ev AP, Semenova EA, Shernyakov YM, Maximov MV, Livshits DA, Ustinov VM, Ledentsov NN, Bimberg D, Alferov ZI
737 - 741	Tuning the single optical mode spontaneous emission coupling of a quantum dot in a micropost cavity Solomon GS, Pelton M, Yamamoto Y
742 - 747	Improved performance of MBE grown quantum-dot lasers with asymmetric dots in a well design emitting near 1.3 mu m Krebs R, Deubert S, Reithmaier JP, Forchel A
748 - 753	InP-based VCSEL technology covering the wavelength range from 1.3 to 2.0 mu m Boehm G, Ortsiefer M, Shau R, Rosskopf J, Lauer C, Maute M, Kohler F, Mederer F, Meyer R, Amann MC
754 - 759	Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers Cengher D, Hatzopoulos Z, Gallis S, Deligeorgis G, Aperathitis E, Androulidaki M, Alexe M, Dragoi V, Kyriakis-Bitzaros ED, Halkias G, Georgakilas A
760 - 765	A forbidden temperature region for the growth of planar strained InAlGaAs MQW structures for 1.3 mu m lasers SpringThorpe AJ, Extavour M, Goodchild D, Griswold EM, Smith G, White JK, Hinzer K, Glew R, Williams R, Robert F
766 - 770	Lattice-matched Al0.95Ga0.05AsSb oxide for current confinement in InP-based long wavelength VCSELs Reddy MHM, Buell DA, Asano T, Koda R, Feezell D, Huntington AS, Coldren LA
771 - 776	Room temperature 1.3 mu m emission from self-assembled GaSb/GaAs quantum dots Farrer I, Murphy MJ, Ritchie DA, Shields AJ
777 - 781	Experimental extract and empirical formulas of refractive indices of GaAs and AlAs at high temperature by HRXRD and optical reflectivity measurement Zhang BY, Solomon G, Weihs G, Yamamoto Y
782 - 786	The effects of (NH4)(2)S passivation treatments on the dark current-voltage characteristics of InGaAsSb PIN detectors Zhang X, Li AZ, Lin C, Zheng YL, Xu GY, Qi M, Zhang YG
787 - 793	Normal incidence InAs/InGaAs dots-in-well detectors with current blocking AlGaAs layer Rotella P, Raghavan S, Stintz A, Fuchs B, Krishna S, Morath C, Le D, Kennerly SW
794 - 799	Template design and fabrication for low-loss orientation-patterned nonlinear AlGaAs waveguides pumped at 1.55 mu m Yu X, Scaccabarozzi L, Levi O, Pinguet TJ, Fejer MM, Harris S
800 - 803	Gas source MBE growth of TlInGaAs/InP laser diodes and their room temperature operation Lee HJ, Fujiwara A, Imada A, Asahi H
804 - 810	Properties of metamorphic materials and device structures on GaAs substrates Hoke WE, Kennedy TD, Torabi A, Whelan CS, Marsh PF, Leoni RE, Lardizabal SM, Zhang Y, Jang JH, Adesida I, Xu C, Hsieh KC
811 - 815	MBE growth of AlGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances Cordier Y, Semond F, Lorenzini P, Grandjean N, Natali F, Damilano B, Massies J, Hoel V, Minko A, Vellas N, Gaquiere C, DeJaeger JC, Dessertene B, Cassette S, Surrugue M, Adam D, Grattepain JC, Aubry R, Delage SL
816 - 821	High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy Li AZ, Chen YQ, Chen JX, Qi M, Liu XC, Chen J, Wang RM, Wang WL, Li WX
822 - 826	Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs Cordier Y, Lorenzini P, Chauveau JM, Ferre D, Androussi Y, DiPersio J, Vignaud D, Codron JL
827 - 831	High indium metamorphic HEMT on a GaAs substrate Hoke WE, Kennedy TD, Torabi A, Whelan CS, Marsh PF, Leoni RE, Xu C, Hsieh KC
832 - 836	Growth of shallow InAs HEMTs with metamorphic buffer Heyn C, Mendach S, Lohr S, Beyer S, Schnull S, Hansen W
837 - 842	Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric Yang B, Ye PD, Kwo J, Frei MR, Gossmann HJL, Mannaerts JP, Sergent M, Hong M, Bude KNJ
843 - 847	V-grooved InGaAs quantum-wire FET fabricated under an As-2 flux in molecular-beam epitaxy Sugaya T, Jang KY, Wada T, Sato A, Ogura M, Komori K
848 - 851	Molecular beam epitaxial growth and characterization of InP/GaAsSb/InP double heterojunction bipolar transistors Rajavel RD, Hussain T, Montes MC, Sawins MW, Thomas S, Chow DH
852 - 857	Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy Averett KL, Wu X, Koch MW, Wicks GW