1 - 4 |
Directional growth in metal-induced lateral crystallization of amorphous Si under extremely high electric field Kanno H, Kenjo A, Miyao M |
5 - 12 |
Growth of ZnSe single crystals from Zn-Se-Zn(NH4)(3)Cl-5 system Li HY, Jie WQ, Xu KW |
13 - 19 |
Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules Noveski V, Schlesser R, Raghothamachar B, Dudley M, Mahajan S, Beaudoin S, Sitar Z |
20 - 25 |
Room-temperature yellow-amber emission from InGaP quantum wells grown on an InGaP metamorphic buffer layer on GaP(100) substrates Odnoblyudov VA, Tu CW |
26 - 30 |
Mg doped GaN using a valved, thermally energetic source: enhanced incorporation, and control Burnham SD, Namkoong G, Henderson W, Doolittle WA |
31 - 36 |
LP MOVPE growth and characterization of high Al content Al(x)Ga1-N-x epilayers Touzi C, Omnes F, El Jani B, Gibart P |
37 - 54 |
Using optical reflectance to measure GaN nucleation layer decomposition kinetics Koleske DD, Coltrin ME, Russell MJ |
55 - 64 |
Effects of silicon doping on the nanostructures of InGaN/GaN quantum wells Chen MK, Cheng YC, Chen JY, Wu CM, Yang CC, Ma KJ, Yang JR, Rosenauer A |
65 - 69 |
Infrared measurement of Ge concentration in CZ-Si Jiang ZW, Zhang WL, Niu XH, Yan LQ |
70 - 75 |
Growth and structural properties of rocksalt MnSe/GaAs epilayer by hot-wall epitaxy Yu YM, Kim DJ, Eom SH, Choi YD, Yoon MY, Choi IH |
76 - 81 |
Growth of CsLiB6O10 crystals with high laser-damage tolerance Nishioka M, Kanoh A, Yoshimura M, Mori Y, Sasaki T |
82 - 87 |
Effect of the shouldering angle on the shape of the solid-liquid interface and temperature fields in sillenite-type crystals growth Bermudez V, Budenkova ON, Yuferev VS, Vasiliev MG, Bystrova EN, Kalaev VV, Rojo JC, Dieguez E |
88 - 92 |
Large-scale fabrication of single-crystalline Mn3O4 nanowires via vapor phase growth Chang YQ, Yu DP, Long Y, Xu J, Luo XH, Ye RC |
93 - 99 |
Growth of epitaxial tungsten oxide nanorods Gillet M, Delamare R, Gillet E |
100 - 109 |
Mechanism of preferential orientation in sputter deposited titanium nitride and yttria-stabilized zirconia layers Mahieu S, Ghekiere P, De Winter G, Heirwegh S, Depla D, De Gryse R, Lebedev OI, Van Tendeloo G |
110 - 113 |
Investigation of the switching phenomena in Ga2Te3 single crystals Aydogan S, Karacali T, Yogurtcu YK |
114 - 121 |
Real-time X-ray study of roughness scaling in the initial growth of epitaxial BaTiO3/LaNiO3 superlattices Liang YC, Lee HY, Liu HJ, Huang CK, Wu TB |
122 - 128 |
Synthesis and photoluminescence of gallium oxide ultra-long nanowires and thin nanosheets Xiang X, Cao CB, Zhu HS |
129 - 139 |
One of the potentially optimal interfaces of beta-FeSi2/Si Zhu YM, Zhang WZ, Ye F |
140 - 145 |
Single-crystal growth and properties of AgCd2GaS4 Olekseyuk ID, Parasyuk OV, Yurchenko OM, Pankevych VZ, Zaremba VI, Valiente R, Olekseyuk ID |
146 - 153 |
Growth of excellent-quality Nd : LuVO4 single crystal and laser properties Zhao SR, Zhang HJ, Liu JH, Wang JY, Xu XG, Zhao ZW, Xu J, Jiang MH |
154 - 162 |
Crystal structure and morphology control of calcium oxalate using biopolymeric additives in crystallization Jung T, Kim WS, Choi CK |
163 - 169 |
A phase-field model for the solidification of multicomponent and multiphase alloys Qin RS, Wallach ER, Thomson RC |
170 - 185 |
Pressure-mediated effects on thermal dendrites Koss MB, LaCombe JC, Chait A, Pines V, Zlatkowski M, Glicksman ME, Kar P |
186 - 194 |
Two-step nucleation process of silicate interplanetary dust particles at the vicinity of silicate melt Kobatake H, Tsukamoto K, Satoh H |
195 - 205 |
Morphological stability of a solid-liquid interface and cellular growth: Insights from thermoelectric measurements in microgravity experiments Garandet JP, Boutet G, Lehmann P, Drevet B, Camel D, Rouzaud A, Favier JJ, Faivre G, Coriell S, Alexander JID, Billia B |
206 - 212 |
Chemical vapor transport of platinum and rhodium with oxygen as transport agent Hannevold L, Nilsen O, Kjekshus A, Fjellvag H |
213 - 228 |
Numerical simulation of liquid phase electro-epitaxial selective area growth Khenner M, Braun RJ |