1 - 18 |
Steps in solution growth: dynamics of kinks, bunching and turbulence Chernov AA, Rashkovich LN, Vekilov PG |
19 - 28 |
Understanding of crystal growth mechanisms through experimental studies of semiconductor epitaxy Nishinaga T |
29 - 38 |
Palladium nano-clusters on the MgO(100) surface: substrate-induced characteristics of morphology and atomic structure Goniakowski J, Mottet C |
39 - 50 |
Creation of perfect surfaces Mori Y, Yamamura K, Endo K, Yamauchi K, Yasutake K, Goto H, Kakiuchi H, Sano Y, Mimura H |
51 - 55 |
Roughening transition of an SOS model with elastic interactions Muller-Krumbhaar H, Gutheim F, Putter C |
56 - 64 |
Nonlinear dynamics of vicinal surfaces Pierre-Louis O, Danker G, Chang J, Kassner K, Misbah C |
65 - 76 |
Two-step mechanism for the nucleation of crystals from solution Vekilov PG |
77 - 82 |
Analytical criteria for missing orientations on three-dimensional equilibrium shapes Sekerka RF |
83 - 90 |
Local order in interfaces van der Eerden JPJM, Makkinje J, Vlugt TJH |
91 - 98 |
Growth and fundamental properties of SiGe bulk crystals Yonenaga I |
99 - 105 |
A new growth method for CdTe: a breakthrough towards large areas Pelliciari B, Dierre F, Brellier D, Schaub B |
106 - 112 |
III-V Ternary bulk substrate growth technology: a review Dutta PS |
113 - 119 |
Growth and some electrical properties of lead-free piezoelectric crystals (Na1/2Bi1/2)TiO3 and (Na1/2Bi1/2)TiO3-BaTiO3 prepared by a Bridgman method Xu GS, Duan ZQ, Wang XF, Yang DF |
120 - 127 |
Sub-liquidus co-crystallization in the Ln(2)O(3)-BaO-CoO system: growth of large LnBaCo(2)O(5)+x (Ln = Eu, Gd, Tb, Dy) single crystals Barilo SN, Shiryaev SV, Bychkov GL, Plakhty VP, Shestak AS, Soldatov AG, Podlesnyak A, Conder K, Baran M, Flavell WR, Furrer A |
128 - 134 |
Advantageous growth characteristics and properties of SrAIF(5) compared with BaMgF4 for UV/VUV nonlinear optical applications Shimamura K, Villora EG, Muramatsu K, Ichinose N |
135 - 140 |
Highly Yb-doped oxides for thin-disc lasers Petermann K, Fagundes-Peters D, Johannsen J, Mond M, Peters V, Romero JJ, Kutovoi S, Speiser J, Giesen A |
141 - 149 |
Metastable group II sulphides grown by MBE: surface morphology and crystal structure Prior KA, Bradford C, David L, Tang X, Cavenett BC |
150 - 156 |
Heteroeptiaxial growth of Co1-xFex alloy monolayers on W(110) Pratzer M, Elmers HJ |
157 - 166 |
Feasibility of III-V on-silicon strain relaxed substrates Kostrzewa M, Grenet G, Regreny P, Leclercq JL, Perreau P, Jalaguier E, Di Cioccio L, Hollinger G |
167 - 174 |
Growth patterns and interfacial kinetic supercooling at ice/water interfaces at which anti-freeze glycoprotein molecules are adsorbed Furukawa Y, Inohara N, Yokoyama E |
175 - 184 |
Modeling of a space experiment on Bridgman solidification of concentrated semiconductor alloy Stelian C, Duffar T |
185 - 192 |
High-pressure recrystallisation - a route to new polymorphs and solvates of acetamide and parabanic acid Fabbiani FPA, Allan DR, Marshall WG, Parsons S, Pulham CR, Smith RI |
193 - 200 |
In situ observation for semiconductor solution growth using a near-infrared microscope Inatomi Y, Kikuchi M, Nakamura R, Kuribayashi K, Jimbo I |
201 - 208 |
Application of synchrotron X-ray imaging to the study of directional solidification of aluminium-based alloys Schenk T, Thi HN, Gastaldi J, Reinhart G, Cristiglio V, Mangelinck-Noel N, Klein H, Hartwig J, Grushko B, Billia B, Baruchel J |
209 - 216 |
In situ monitoring of the stress evolution in growing group-III-nitride layers Krost A, Dadgar A, Schulze F, Blasing J, Strassburger G, Clos R, Diez A, Veit P, Hempel T, Christen J |
217 - 223 |
Growth of new nonlinear crystals LiMX2 (M = Al, In, Ga; X = S, Se, Te) for the mid-IR optics Isaenko L, Vasilyeva I, Merkulov A, Yelisseyev A, Lobanov S |
224 - 231 |
Inclined net plane faceting observed at Czochralski growth of decagonal AlCoNi quasicrystals Gille P, Meisterernst G, Faber N |
232 - 239 |
Design and growth of new NLO crystals for UV light generation Hu ZG, Yoshimura M, Mori Y, Sasaki T |
240 - 250 |
Modeling of industrial bulk crystal growth-state of the art and challenges Fischer B, Friedrich J, Jung T, Hainke M, Dagner J, Fuhner T, Schwesig P |
251 - 258 |
Growth technology of piezoelectric langasite single crystal Uda S, Wang SQ, Konishi N, Inaba H, Harada J |
259 - 275 |
Bulk growth of cadmium mercury telluride (CMT) using the Bridgman/accelerated crucible rotation technique (ACRT) Capper P, Maxey C, Butler C, Grist M, Price J |
276 - 282 |
Heavily doped silicon crystals: neckless growth and robust wafers Hoshikawa K, Huang XM, Taishi T |
283 - 291 |
LEC- and VGF-growth of SIGaAs single crystals - recent developments and current issues Jurisch M, Borner F, Bunger T, Eichler S, Flade T, Kretzer U, Kohler A, Stenzenberger J, Weinert B |
292 - 304 |
Crystal growth and materials research in photovoltaics: progress and challenges Surek T |
305 - 316 |
Strained heteroepitaxy on nanomesas: a way toward perfect lateral organization of quantum dots Bavencoffe M, Houdart E, Priester C |
317 - 324 |
Functionalizing surfaces with arrays of clusters: role of the defects Melinon P, Hannour A, Prevel B, Bardotti L, Bernstein E, Perez A, Gierak J, Bourhis E, Mailly D |
325 - 330 |
Flux-mediated epitaxy: general application in vapor phase epitaxy to single crystal quality of complex oxide films Matsumoto Y, Takahashi R, Koinuma H |
331 - 337 |
Crystal growth technology CGT for energy: saving energy and renewable energy Scheel HJ |
LII - LV |
Preface Duffar T, Heuken M, Villain J |