1 - 6 |
Aluminum nitride substrate growth by halide vapor transport epitaxy Bliss DF, Tassev VL, Weyburne D, Bailey JS |
7 - 13 |
Growth and passivation of AlGaN/GaN hetero structures Shealy JR, Prunty TR, Chumbes EM, Ridley BK |
14 - 21 |
Epitaxy growth kinetics of GaN films Wu B, Ma RH, Zhang H |
22 - 28 |
Theoretical study of in desorption during MBE growth of InGaAs/GaAs Coleiny G, Venkat R |
29 - 33 |
Effects of the low temperature grown buffer layer thickness on the growth of GaAs on Si by MBE Gopalakrishnan N, Baskar K, Kawanami H, Sakata I |
34 - 40 |
High-quality La3Ga5.5Ta0.5O14 and La3Ga5.5Nb0.5O14 LPE films for oscillators and resonators Klemenz C |
41 - 49 |
Numerical and experimental study of polysilicon deposition on silicon tubes Cai D, Zheng LL, Wan Y, Hariharan AV, Chandra M |
50 - 56 |
Large-grain (> 1-mm), recrystallized germanium films on alumina, fused silica, oxide-coated silicon substrates for III-V solar cell applications Mauk MG, Balliet JR, Feyock BW |
57 - 61 |
Growth and characterization of 200 mm SI GaAs crystals grown by the VGF method Stenzenberger J, Bunger T, Borner F, Eichler S, Flade T, Hammer R, Jurisch M, Kretzer U, Teichert S, Weinert B |
62 - 66 |
Vertical Bridgman growth of calcium lithium niobium gallium garnet crystals Xu XW, Chong TC, Zhang GY, Li MH, Soo LH, Xu W, Freeman B |
67 - 71 |
Processing of crystals with controlled lattice parameter gradient by the LHPG technique Barbosa LB, Ardila DR, Kakuno EM, Camparin RH, Cusatis C, Andreeta JP |
72 - 76 |
Preparation of large single crystals ANb(2)O(6) (A = Ni, Co, Fe, Mn) by the floating-zone method Prabhakaran D, Wondre FR, Boothroyd AT |
77 - 82 |
Single crystal growth of Zn-doped CuO by the floating-zone method Prabhakaran D, Boothroyd AT |
83 - 89 |
Growth and characterization of aliovalent ion-doped LiCaAlF6 single crystals Sato H, Machida H, Nikl M, Yoshikawa A, Fukuda T |
90 - 93 |
Congruency and morphology of Ca-3(LiNbGa)(5)O-12 garnet crystals grown by Czochralski method Zhang GY, Li MH, Chong TC, Xu XW, Freeman B |
94 - 99 |
Crystal growth of Yb3+-doped oxide single crystals for scintillator application Yoshikawa A, Nikl M, Ogino H, Lee JH, Fukuda T |
XI - XII |
ACCGE-14 - Proceedings of the Fourteenth American Conference on Crystal Growth and Epitaxy, Seattle, Washington, USA, 4-9 August 2002 - Preface Yeckel A |
100 - 106 |
Cellular arrays in binary alloys: From geometry to stability Pocheau A, Georgelin M |
107 - 112 |
Physical vapor transport growth of large AlN crystals Singh NB, Berghmans A, Zhang H, Wait T, Clarke RC, Zingaro J, Golombeck JC |
113 - 117 |
Growth and characterization of 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) single crystals Kumar RM, Babu DR, Ravi G, Jayavel R |
118 - 125 |
Effects of chemical compositions on the growth of relaxor ferroelectric Pb(Sc1/2Nb1/2)(1-x)TixO3 single crystals Bing YH, Ye ZG |
126 - 133 |
Nucleation kinetics, growth and characterization of dLAP, dLAP : KF and dLAP : NaN3 crystals Hameed ASH, Ravi G, Jayavel R, Ramasamy P |
134 - 138 |
Flux growth and morphology study of stoichiometric lithium niobate crystals Solanki S, Chong TC, Xu XW |
139 - 145 |
Crystal growth and superconductivity of LiTi2O4 and Li1+1/3Ti2-1/3O4 Chen C, Spears M, Wondre F, Ryan J |
146 - 151 |
Effect of niobium substitution in stoichiometric lithium tantalate (SLT) single crystals Ravi G, Jayavel R, Takekawa S, Nakamura M, Kitamura K |
152 - 156 |
Formation of scatter particles in KDP (DKDP) crystals Sun X, Fang CS, Gu QT, Wang SL, Li YN, Xu XG, Gao ZS |
157 - 161 |
Growth aspects of semi-organic nonlinear optical L-arginine tetrafluoroborate single crystals Babu DR, Jayaraman D, Kumar RM, Ravi G, Jayavel R |
162 - 165 |
Kinetic Monte Carlo simulations of the surface roughening of binary systems Bentz DN, Betush WJ, Jackson KA |
166 - 169 |
The effect of stress fields from a probe tip on step motion using kinetic Monte Carlo Bentz DN, Betush WJ, Jackson KA |
170 - 173 |
Crystal growth with applied current Brush LN, Murray BT |
174 - 182 |
Magnetic field effects during liquid-encapsulated Czochralski growth of doped photonic semiconductor crystals Morton JL, Ma N, Bliss DF, Bryant GG |
183 - 188 |
Analysis of magnetic field effect on 3D melt flow in CZ Si growth Ivanov NG, Korsakov AB, Smirnov EM, Khodosevitch KV, Kalaev VV, Makarov YN, Dornberger E, Virbulis J, von Ammon W |
189 - 194 |
Prediction of the melt/crystal interface geometry in liquid encapsulated Czochralski growth of InP bulk crystals Bystrova EN, Kalaev VV, Smirnova OV, Yakovlev EV, Makarov YN |
195 - 202 |
Modeling analysis of VCz growth of GaAs bulk crystals using 3D unsteady melt flow simulations Yakovlev E, Smirnova OV, Bystrova EN, Kalaev VV, Frank-Rotsch C, Neubert M, Rudolph P, Makarov YN |
203 - 208 |
Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations Kalaev VV, Lukanin DP, Zabelin VA, Makarov YN, Virbulis J, Dornberger E, von Ammon W |
209 - 214 |
A continuous Czochralski silicon crystal growth system Wang C, Zhang H, Wang TH, Ciszek TF |
215 - 222 |
Kinetics and heat transfer of CdZnTe Bridgman growth without wall contact Zhang H, Larson DJ, Wang CL, Chen TH |
223 - 228 |
Interlaboratory comparison of InGaAsP ex situ characterization Roshko A, Bertness KA |
229 - 235 |
Statistical comparison between inductively coupled plasma-mass spectrometry, and Hall effect techniques using antimony-doped germanium Keefer LA, Matthiesen DH |
236 - 243 |
Effect of aging on the growth of intermetallic compounds at the interface of Sn-9Zn-xAg/Cu substrates Chang TC, Wang MC, Hon MH |
244 - 250 |
X-ray characterization of bulk AlN single crystals grown by the sublimation technique Raghothamachar B, Dudley M, Rojo JC, Morgan K, Schowalter LJ |
251 - 255 |
Optical properties of Czochralski grown rare-earth garnet single crystals in solid solution Kimura H, Miyazaki A |
256 - 261 |
Characterization of optical and crystal qualities in InxGa1-xN/InyGa1-yN multi-quantum wells grown by MOCVD Lee SN, Sakong T, Lee W, Paek H, Seon M, Lee IH, Nam O, Park Y |
262 - 268 |
Detection of trace water in phosphine with cavity ring-down spectroscopy Lehman SY, Bertness KA, Hodges JT |
269 - 273 |
Thermal diffusivity, thermal conductivity, and specific heat capacity measurements of molten tellurium Zhu S, Li C, Su CH, Lin B, Ban H, Scripa RN, Lehoczky SL |
274 - 278 |
Convective contamination in self-diffusivity experiments with an applied magnetic field Khine YY, Banish RM, Alexander JID |
XIII - XIII |
ACCGE-14 - Proceedings of the Fourteenth American Conference on Crystal Growth and Epitaxy, Seattle, Washington, USA, 4-9 August 2002 -Editors' preface Derby JJ, Kowach G, Scripa R, Yeckel A |